公开(公告)号：US20180252650A1

公开(公告)日：2018-09-06

申请号：US15448069

申请日：2017-03-02

Applicant: Tokyo Electron Limited

Inventor： Daniel Morvay ,  Taejoon Han ,  Mirko Vukovic

IPC: G01N21/73 ,  H01J37/32 ,  G06T11/00 ,  G01J3/443 ,  H01L21/3065 ,  H01L21/67

CPC classification number: G01N21/73 ,  G01J3/443 ,  G01N21/68 ,  G01N2021/1787 ,  G01N2201/1293 ,  G06T11/003 ,  H01J37/32422 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (OES). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. With some implementations utilize optical detectors positioned along multiple axes (e.g., two or more) to receive incident incoming optical spectra from the plasma chamber during the plasma processing (e.g., etching) of the substrate. Because of the multi-axes arrangement, the incident incoming optical spectra form an intersecting grid.

公开(公告)号：US10215704B2

公开(公告)日：2019-02-26

申请号：US15448069

申请日：2017-03-02

Applicant: Tokyo Electron Limited

Inventor： Taejoon Han ,  Daniel Morvay ,  Mirko Vukovic

IPC: G01J3/30 ,  G01N21/73 ,  H01J37/32 ,  G06T11/00 ,  G01J3/443 ,  H01L21/3065 ,  H01L21/67 ,  G01N21/68 ,  G01N21/17

Abstract: Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (OES). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. With some implementations utilize optical detectors positioned along multiple axes (e.g., two or more) to receive incident incoming optical spectra from the plasma chamber during the plasma processing (e.g., etching) of the substrate. Because of the multi-axes arrangement, the incident incoming optical spectra form an intersecting grid.

公开(公告)号：US20180144078A1

公开(公告)日：2018-05-24

申请号：US15484436

申请日：2017-04-11

Applicant: Tokyo Electron Limited

Inventor： Daniel Morvay ,  Taejoon Han

IPC: G06F17/50

CPC classification number: G06F17/5036 ,  G03F7/70 ,  G03F7/70866 ,  G03F7/70875 ,  G06F2217/16 ,  H01L21/67248 ,  H01L21/67253

Abstract: Described herein are technologies to facilitate the generation and presentation of a map of an attribute of a substrate, such as a semiconductor wafer. Using the data of measured attribute (e.g., thickness, temperature, etc.) of a substrate, one or more of the described implementations generate data of non-measured (i.e., calculated) attributes to complete a map of the substrate using model parameters and a correlations model, such as a squared exponential Gaussian process model.