公开(公告)号：US11081322B2

公开(公告)日：2021-08-03

申请号：US15783048

申请日：2017-10-13

Applicant: Tokyo Electron Limited

Inventor： Naotaka Noro ,  Toshio Hasegawa ,  Tamaki Takeyama ,  Shinya Iwashita ,  Katsuhito Hirose

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.

公开(公告)号：US11939665B2

公开(公告)日：2024-03-26

申请号：US17184089

申请日：2021-02-24

Applicant: Tokyo Electron Limited

Inventor： Masato Shinada ,  Tamaki Takeyama ,  Kazunaga Ono ,  Naoyuki Suzuki ,  Hiroaki Chihaya ,  Einstein Noel Abarra

IPC: C23C14/54 ,  G01B11/06 ,  G01S7/481 ,  G01S17/08 ,  H01F41/32 ,  H01L21/66 ,  H10N50/01

CPC classification number: C23C14/547 ,  G01B11/0625 ,  G01S7/4814 ,  G01S17/08 ,  H01F41/32 ,  H01L22/12 ,  H10N50/01

Abstract: A film thickness measurement apparatus includes: a stage that places a substrate having a film formed thereon and measures a thickness of the film in-situ in a film forming apparatus; a film thickness meter including a light emitter that emits light toward the substrate disposed on the stage and a light receiving sensor that receives the light reflected by the substrate for measuring the thickness of the film in-situ; a moving mechanism including a multi-joint arm that moves an irradiation point of the light on the substrate; a distance meter that measures a distance between the light receiving sensor and the irradiation point on the substrate; and a distance adjustor that adjusts the distance between the light receiving sensor and the irradiation point on the substrate.

公开(公告)号：US20180108518A1

公开(公告)日：2018-04-19

申请号：US15783048

申请日：2017-10-13

Applicant: Tokyo Electron Limited

Inventor： Naotaka Noro ,  Toshio Hasegawa ,  Tamaki Takeyama ,  Shinya Iwashita ,  Katsuhito Hirose

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/505 ,  H01J37/3244

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.