公开(公告)号：US08834631B2

公开(公告)日：2014-09-16

申请号：US13742712

申请日：2013-01-16

Applicant: Tokyo Electron Limited

Inventor： Katsuhito Hirose ,  Toshio Miyazawa ,  Toshiharu Hirata ,  Toshimasa Tanaka

IPC: C23C16/52 ,  C23C16/455 ,  G01M13/00 ,  H03K21/02 ,  F16K37/00 ,  H03K21/00

CPC classification number: C23C16/4551 ,  C23C16/45544 ,  C23C16/45561 ,  C23C16/52 ,  F16K37/00 ,  F16K37/0041 ,  G01M13/00 ,  H03K21/00 ,  H03K21/023

Abstract: A processing apparatus includes a processing chamber configured to accommodate a target object to be processed, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths to open and close the gas supply paths. The processing apparatus further includes valve drive units configured to independently drive the valves, sensor units configured to independently monitor opening and closing operations of the valves, and a control unit configured to determine operation statuses of the valves based on valve opening and closing drive signals transmitted to the valve drive units and/or valve opening and closing detection signals transmitted from the sensor units.

Abstract translation: 处理装置包括：处理室，被配置为容纳待处理的目标物体，与供给到处理室中的处理气体的种类相对应地设置的气体供给路径，以及分别设置在气体供给路径中以打开和关闭的阀 供气路径。 处理装置还包括被配置为独立地驱动阀的阀驱动单元，被配置为独立地监视阀的打开和关闭操作的传感器单元，以及配置成基于阀打开和关闭传动的驱动信号来确定阀的操作状态的控制单元 与从传感器单元传送的阀驱动单元和/或阀打开和关闭检测信号。

公开(公告)号：US11276592B2

公开(公告)日：2022-03-15

申请号：US16838292

申请日：2020-04-02

Applicant: Tokyo Electron Limited

Inventor： Katsuhito Hirose ,  Koichi Miyashita ,  Hiroshi Hirose ,  Satoshi Gomi ,  Yasunori Kumagai ,  Takashi Yoshiyama

IPC: H01L21/67 ,  G05B19/418 ,  H01L21/02

Abstract: A processing apparatus for processing a substrate includes: a plurality of end devices; a low-level controller configured to control specific end devices among the plurality of end devices; and a module controller configured to execute a recipe for processing the substrate, to specify control steps satisfying a specific condition among a plurality of control steps of the recipe, and to transmit the specified control steps to the low-level controller, wherein the low-level controller controls the specific end devices based on the control steps received from the module controller.

公开(公告)号：US20200299841A1

公开(公告)日：2020-09-24

申请号：US16088102

申请日：2017-03-15

Applicant: Tokyo Electron Limited

Inventor： Katsuhito Hirose ,  Toshio Hasegawa ,  Shohei Yoshida ,  Takeshi Shinohara ,  Shinji Kawasaki

IPC: C23C16/52 ,  C23C16/455 ,  H01L21/67 ,  G05B23/02 ,  G05B19/048

Abstract: Provided is an abnormality detection system that includes a first controller configured to control a substrate processing apparatus and a second controller configured to control a device provided in the substrate processing apparatus according to an instruction from the first controller, thereby detecting an abnormality in the device. The second controller includes a storage unit configured to collect status signals for the device for a predetermined time and at a predetermined sampling interval in a predetermined cycle and accumulate the collected status signals for the device, and the first controller includes an abnormality determination unit configured to acquire the accumulated status signals for the device from the second controller at a time interval equal to or longer than the predetermined time, and determine presence or absence of an abnormality in the device.

公开(公告)号：US11873560B2

公开(公告)日：2024-01-16

申请号：US16088102

申请日：2017-03-15

Applicant: Tokyo Electron Limited

Inventor： Katsuhito Hirose ,  Toshio Hasegawa ,  Shohei Yoshida ,  Takeshi Shinohara ,  Shinji Kawasaki

IPC: C23C16/52 ,  G05B23/02 ,  C23C16/455 ,  G05B19/048 ,  H01L21/67

CPC classification number: C23C16/52 ,  C23C16/45536 ,  C23C16/45544 ,  G05B19/048 ,  G05B23/0221 ,  H01L21/67253 ,  G05B2219/45026

Abstract: Provided is an abnormality detection system that includes a first controller configured to control a substrate processing apparatus and a second controller configured to control a device provided in the substrate processing apparatus according to an instruction from the first controller, thereby detecting an abnormality in the device. The second controller includes a storage unit configured to collect status signals for the device for a predetermined time and at a predetermined sampling interval in a predetermined cycle and accumulate the collected status signals for the device, and the first controller includes an abnormality determination unit configured to acquire the accumulated status signals for the device from the second controller at a time interval equal to or longer than the predetermined time, and determine presence or absence of an abnormality in the device.

公开(公告)号：US11081322B2

公开(公告)日：2021-08-03

申请号：US15783048

申请日：2017-10-13

Applicant: Tokyo Electron Limited

Inventor： Naotaka Noro ,  Toshio Hasegawa ,  Tamaki Takeyama ,  Shinya Iwashita ,  Katsuhito Hirose

IPC: H01L21/00 ,  C23C16/00 ,  H01J37/32 ,  C23C16/505 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/50

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.

公开(公告)号：US09708711B2

公开(公告)日：2017-07-18

申请号：US13748988

申请日：2013-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhito Hirose ,  Toshio Miyazawa ,  Toshiharu Hirata ,  Toshimasa Tanaka

IPC: C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/45544 ,  C23C16/45561

Abstract: A processing apparatus includes a processing chamber, gas supply paths provided in a corresponding relationship with the kinds of process gases supplied into the processing chamber, and valves respectively arranged in the gas supply paths. The apparatus further includes a measuring unit for measuring a physical parameter associated with each of the process gases passing through the gas supply paths, a register unit which stores the physical parameter, and a control unit configured to determine a process status based on the physical parameter stored in the register unit. The register unit is provided in a lower-hierarchy control device connected to the control unit of a higher hierarchy to transmit and receive signals to and from the control unit. The lower-hierarchy control device is configured to control input and output signals between the control unit and end devices under the control of the control unit.

公开(公告)号：US12087562B2

公开(公告)日：2024-09-10

申请号：US17586002

申请日：2022-01-27

Applicant: Tokyo Electron Limited

Inventor： Kazushi Hikawa ,  Katsuhito Hirose

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H05H1/46

CPC classification number: H01J37/32935 ,  C23C16/45536 ,  C23C16/505 ,  H01J37/32082 ,  H05H1/4645

Abstract: A substrate processing apparatus includes a radio-frequency power supply part configured to supply radio-frequency power for plasma generation to a processing container, and a monitoring part configured to detect an abnormality in the supply of the radio-frequency power to the processing container, wherein the monitoring part is configured to detect the abnormality in the supply of the radio-frequency power to the processing container based on a signal data obtained by sampling a signal propagating between the radio-frequency power supply part and the processing container at a sampling frequency higher than a frequency of the radio-frequency power.

公开(公告)号：US10815567B2

公开(公告)日：2020-10-27

申请号：US15520820

申请日：2015-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhito Hirose ,  Kunihiro Tada ,  Kenji Suzuki ,  Takeshi Shinohara

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/34

Abstract: A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

公开(公告)号：US20180108518A1

公开(公告)日：2018-04-19

申请号：US15783048

申请日：2017-10-13

Applicant: Tokyo Electron Limited

Inventor： Naotaka Noro ,  Toshio Hasegawa ,  Tamaki Takeyama ,  Shinya Iwashita ,  Katsuhito Hirose

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/505 ,  H01J37/3244

Abstract: A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve V2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve V2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.

公开(公告)号：US09725804B2

公开(公告)日：2017-08-08

申请号：US14820723

申请日：2015-08-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhito Hirose ,  Toshio Miyazawa

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/34 ,  H01L21/02 ,  H01L21/28

CPC classification number: C23C16/45544 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/28194

Abstract: A processing apparatus includes a plurality of first gas supply channels configured to supply a plurality of gases to the process chamber, a second gas supply channel configured to supply a gas to the process chamber, the gas being used in processing the target substrate, a plurality of first valves configured to open and close the plurality of first gas supply channels, a second valve configured to open and close the second gas supply channel, and a controller. One of the plurality of first valves is a follow-up target valve. The controller controls opening/closing operation of the plurality of first valves such that opening durations of the plurality of first valves do not overlap with each other, and controls opening/closing operation of the second valve such that opening duration of the second valve has a predetermined time relationship with opening duration of the follow-up target valve.