公开(公告)号：US20210005505A1

公开(公告)日：2021-01-07

申请号：US16915046

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro WAGATSUMA ,  Kentaro ASAKURA ,  Tetsuya SAITOU ,  Masahisa WATANABE

IPC: H01L21/687 ,  H01L21/677 ,  H01L21/67

Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

公开(公告)号：US20200208267A1

公开(公告)日：2020-07-02

申请号：US16726369

申请日：2019-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi KAMIO ,  Tetsuya SAITOU ,  Kai SHIONO

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/06

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.

公开(公告)号：US20140090599A1

公开(公告)日：2014-04-03

申请号：US14030422

申请日：2013-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya SAITOU

IPC: B05B1/00

CPC classification number: B05B1/005 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45565

Abstract: A film forming apparatus performs a film forming process by supplying a plurality of types of reactant gases that react with one another to a substrate in a processing chamber in a vacuum atmosphere. The apparatus includes: a ceiling part provided to face a mounting table and having an inclined surface that is wider gradually from a center toward a periphery; gas supply units provided at a central area of the ceiling part, each of the gas supply units having gas discharge openings formed around a circumferential direction thereof; and a shower head disposed to cover the gas supply units. The shower head has gas supply openings in a bottom portion thereof opposite to the mounting table. An outer periphery of the shower head is located inward of an outer periphery of the substrate mounted on the mounting table.

Abstract translation: 成膜装置通过在真空气氛中在处理室中将相互反应的多种反应气体供给基板而进行成膜处理。 该装置包括：顶部，其设置成面对安装台并且具有从中心朝向周边逐渐变宽的倾斜表面; 气体供给单元设置在天花板部的中央区域，每个气体供给单元具有围绕其圆周方向形成的排气口; 以及设置成覆盖气体供应单元的淋浴喷头。 淋浴头在与安装台相对的底部具有气体供给开口。 淋浴头的外周面位于安装在安装台上的基板的外周的内侧。

公开(公告)号：US20210013004A1

公开(公告)日：2021-01-14

申请号：US16918728

申请日：2020-07-01

Applicant: Tokyo Electron Limited

Inventor： Tetsuya SAITOU

IPC: H01J37/32 ,  H05H1/46

Abstract: A plasma processing apparatus includes: a processing container; a stage provided in the processing container and configured to place a substrate on the stage; a gas introduction part provided in an upper portion of the processing container to face the stage and configured to introduce a processing gas into the processing container; and an annular exhaust path which is provided in an upper portion of a side wall of the processing container, and in which an opening toward a center of the processing container is formed at an inner circumferential side of the exhaust path, wherein the stage and the gas introduction part are respectively connected to high-frequency power supplies for generating plasma of the processing gas, wherein the exhaust path is grounded, wherein the plasma processing apparatus further comprises a grounded plasma distribution adjuster covering the opening, and wherein through-holes are formed in the plasma distribution adjuster.

公开(公告)号：US20200294799A1

公开(公告)日：2020-09-17

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya SAITOU ,  Takashi KAMIO ,  Kazuyoshi YAMAZAKI ,  Naoshige FUSHIMI

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US20150267298A1

公开(公告)日：2015-09-24

申请号：US14659121

申请日：2015-03-16

Applicant: Tokyo Electron Limited

Inventor： Tetsuya SAITOU ,  Tomohiro OOTA ,  Toshio TAKAGI

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52 ,  C23C16/44 ,  C23C16/458

CPC classification number: C23C16/45565 ,  C23C16/34 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45574 ,  C23C16/458 ,  C23C16/46

Abstract: A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.

Abstract translation: 一种成膜设备，用于通过将多个反应物气体依次供应到基板并供应替换气体来进行成膜过程包括：安装台，其安装在基板上;以及淋浴喷头，其具有面向安装台的平坦表面， 多个供气口。 在喷淋头处设置有环形突起，以在环形突起与安装台的顶表面之间形成间隙。 多个气体供给单元设置在淋浴喷头的上侧的顶部。 每个气体供给单元具有沿圆周方向形成的气体排出开口。 扩散空间被布置成使得扩散空间的外周在平面图中位于安装在安装台上的基板的外周的内侧。

公开(公告)号：US20210005502A1

公开(公告)日：2021-01-07

申请号：US16909228

申请日：2020-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichiro WAGATSUMA ,  Kentaro ASAKURA ,  Tetsuya SAITOU ,  Masahisa WATANABE

IPC: H01L21/687 ,  C23C16/455

Abstract: A stage on which a substrate is mounted, includes a stage body having an upper surface on which the substrate is mounted, a cover member configured to cover an outer edge portion of the upper surface of the stage body, and a positional deviation preventing member provided between the upper surface of the stage body and a lower surface of the cover member and configured to roll or slide. A body-side recess configured to accommodate the positional deviation preventing member is formed on the upper surface of the stage body. A cover-side recess configured to accommodate the positional deviation preventing member accommodated in the body-side recess is formed on the lower surface of the cover member. At least one of the body-side recess and the cover-side recess is formed in a bowl shape having an inclined surface extending along a radial direction of the stage body.

公开(公告)号：US20200335385A1

公开(公告)日：2020-10-22

申请号：US16848211

申请日：2020-04-14

Applicant: Tokyo Electron Limited

Inventor： Tetsuya SAITOU ,  Yuichiro WAGATSUMA

IPC: H01L21/687 ,  H01L21/67

Abstract: A substrate processing apparatus for processing a substrate includes: a stage having a through-hole penetrating the stage in a vertical direction, the stage being configured to place the substrate on an upper surface of the stage and perform at least one of heating and cooling of the substrate placed on the upper surface; a lift pin configured to be inserted into the through-hole and capable of protruding from the upper surface of the stage through the through-hole; and a support member configured to be capable of supporting the lift pin, wherein the lift pin has a flange located below a lower surface of the stage, wherein the support member is further configured to support the lift pin by engaging with the flange, and wherein the through-hole in the stage is narrower than the flange of the lift pin.