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    Light-emitting diode array
    3.
    发明授权
    Light-emitting diode array 有权
    发光二极管阵列

    公开(公告)号：US07504772B2

    公开(公告)日：2009-03-17

    申请号：US10793248

    申请日：2004-03-05

    申请人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Satoshi Sugiyama ,  Yosuke Komori ,  Toshimitsu Sukegawa

    发明人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Satoshi Sugiyama ,  Yosuke Komori ,  Toshimitsu Sukegawa

    IPC分类号： H05B33/04 ,  H05B33/10 ,  H01L29/18 ,  H01L33/00

    CPC分类号： H01L27/153 ,  B41J2/45

    摘要： A light-emitting diode array comprising a conductive layer formed on a substrate, separate light-emitting portions formed on the conductive layer, a first electrode formed on at least part of an upper surface of each light-emitting portion, and a second electrode formed on the conductive layer adjacent to the light-emitting portions; the first electrode comprising a common switching electrode matrix; the second electrode comprising a common electrode divided such that one second electrode exists in every block; and at least one of bonding pads extending to the first common electrode and the second common electrode being formed on a bonding portion formed on the conductive layer like an island, whereby the bonding pads are separate from each other.

    摘要翻译： 一种发光二极管阵列，包括形成在基板上的导电层，形成在导电层上的分离的发光部分，形成在每个发光部分的上表面的至少一部分上的第一电极和形成的第二电极 在与发光部相邻的导电层上; 所述第一电极包括公共开关电极矩阵; 所述第二电极包括被分开以使得每个块中存在一个第二电极的公共电极; 并且至少一个延伸到第一公共电极的焊盘和第二公共电极形成在形成在导电层上的接合部分上，如岛状，由此焊盘彼此分离。

    Light-emitting diode array
    4.
    发明授权
    Light-emitting diode array 有权
    发光二极管阵列

    公开(公告)号：US07112824B2

    公开(公告)日：2006-09-26

    申请号：US11002065

    申请日：2004-12-03

    申请人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Yukio Sasaki

    发明人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Yukio Sasaki

    IPC分类号： H01L33/00 ,  B41J2/45

    CPC分类号： B41J2/45 ,  H01L27/153

    摘要： A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

    摘要翻译： 一种发光二极管阵列，其包括形成在基板上的导电层，形成在所述导电层上的多个分立的发光部，形成在所述导电层中的将所述发光部分分割成块的第一沟槽，每个形成的第一电极 在每个发光部分的上表面的至少一部分上，直接形成在每个块中的导电层上的一个第二电极，与第一电极分开连接的公共开关布线，分别连接到每个公共布线的第一接合焊盘，第一接合 每个连接到每个公共布线的焊盘和每个连接到每个第二电极的第二焊盘，在每个块中横向布置n个发光部分（n是偶数），并且在相邻光之间的导电层中形成第二凹槽 以使第二槽交替地布置成短而长，最靠近第一槽的一个是短的。

    Light emitting diode and light emitting diode array
    5.
    发明申请
    Light emitting diode and light emitting diode array 审中-公开
    发光二极管和发光二极管阵列

    公开(公告)号：US20060208265A1

    公开(公告)日：2006-09-21

    申请号：US11272761

    申请日：2005-11-15

    申请人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Yukio Sasaki

    发明人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Yukio Sasaki

    IPC分类号： H01L33/00

    CPC分类号： B41J2/45 ,  H01L27/153 ,  H01L33/02 ,  H01L33/30

    摘要： A light emitting diode array comprises compound semiconductor layers epitaxially grown on a p-type GaAs conductive layer 11 formed on a semi-insulating GaAs substrate 30. The epitaxial layer is isolated and divided into a plurality of light emitting parts 1 which function as a light emitting diode. A Si-doped n-type GaAs buffer layer 31 is interposed between the semi-insulating GaAs substrate 30 and the p-type GaAs conductive layer 11. In the light emitting diode array comprising this epitaxial configuration, it is possible to prevent the short-circuit defect due to diffusion of p-type dopant from the p-type GaAs conductive layer into the semi-insulating GaAs substrate made by the LEC method.

    摘要翻译： 发光二极管阵列包括在形成在半绝缘GaAs衬底30上的p型GaAs导电层11上外延生长的化合物半导体层。外延层被隔离并分成多个用作光的发光部分1 发光二极管。 在半绝缘GaAs衬底30和p型GaAs导电层11之间插入Si掺杂的n型GaAs缓冲层31.在包括该外延结构的发光二极管阵列中，可以防止短路， 由p型掺杂剂从p型GaAs导电层扩散到由LEC法制成的半绝缘GaAs衬底中的电路缺陷。

    Light-emitting diode array
    6.
    发明申请
    Light-emitting diode array 有权
    发光二极管阵列

    公开(公告)号：US20050269579A1

    公开(公告)日：2005-12-08

    申请号：US11002065

    申请日：2004-12-03

    申请人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Yukio Sasaki

    发明人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Yukio Sasaki

    IPC分类号： B41J2/45 ,  H01L27/15 ,  H01L33/08 ,  H01L33/30 ,  H01L33/38

    CPC分类号： B41J2/45 ,  H01L27/153

    摘要： A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, first electrodes each formed on at least part of an upper surface of each light-emitting portion, one second electrode formed directly on the conductive layer in each block, common switching wirings separately connected to the first electrodes, first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, n light-emitting portions (n is an even number) being arranged transversely in each block, and second grooves being formed in the conductive layer between adjacent light-emitting portions such that the second grooves are arranged short and long alternately, with the nearest one to the first groove being short.

    摘要翻译： 一种发光二极管阵列，其包括形成在基板上的导电层，形成在所述导电层上的多个分立的发光部，形成在所述导电层中的将所述发光部分分割成块的第一沟槽，每个形成的第一电极 在每个发光部分的上表面的至少一部分上，直接形成在每个块中的导电层上的一个第二电极，与第一电极分开连接的公共开关布线，分别连接到每个公共布线的第一接合焊盘，第一接合 每个连接到每个公共布线的焊盘和每个连接到每个第二电极的第二焊盘，在每个块中横向布置n个发光部分（n是偶数），并且在相邻光之间的导电层中形成第二凹槽 以使第二槽交替地布置成短而长，最靠近第一槽的一个是短的。

    Light emitting device and process for producing the same
    7.
    发明授权
    Light emitting device and process for producing the same 失效
    发光装置及其制造方法

    公开(公告)号：US06781157B2

    公开(公告)日：2004-08-24

    申请号：US10231294

    申请日：2002-08-29

    申请人： Masahiro Noguchi ,  Eiichi Kunitake ,  Genta Koizumi

    发明人： Masahiro Noguchi ,  Eiichi Kunitake ,  Genta Koizumi

    IPC分类号： H01L2715

    CPC分类号： B41J2/45

    摘要： A LED monolithic array type like emitting device which has a plurality of light emitting parts. The device is particularly suitable as a light source for printers. Each light emitting part has a light emitting diode having a laminate structure. The laminate structure has an end-type GaAs substrate and, epitaxially grown on the n-type substrate in the following order: 1) an n-type GaSa buffer layer, an n-type laminated reflection film formed of layer pairs, each having AlGaAs layers different from each other in aluminum composition ratio, an n-type AlGaAs lower cladding layer, a p-type or undoped AlGaAs active layer, a p-type AlGaAs upper cladding layer and a p-type AlGaAs contact layer. Each layer pair making up the laminated reflection film has an AlX1GA1−X1As layer and an AlX2GA1−X2As layer where X1 and X2 represent the Al composition ratio.

    摘要翻译： 一种具有多个发光部件的LED单片阵列型发光装置。 该设备特别适合作为打印机的光源。 每个发光部分具有层叠结构的发光二极管。 该叠层结构具有端部型GaAs衬底，并且以下列顺序在n型衬底上外延生长：1）n型GaSa缓冲层，由层对形成的n型叠层反射膜，每层具有AlGaAs 铝组成比彼此不同的层，n型AlGaAs下包层，p型或未掺杂的AlGaAs有源层，p型AlGaAs上覆层和p型AlGaAs接触层。 构成层叠反射膜的每层对具有AlX1GA1-X1As层和AlX2GA1-X2As层，其中X1和X2表示Al组成比。