摘要:
A method for producing mixed metal oxide compounds includes the steps of: providing a supply of a metal reducing bacteria; providing a culture medium suitable for growth of the bacteria; providing a first mixed metal oxide phase comprising at least a first and a second metal, at least one of the first and second metal being reducible from a higher to a lower oxidation state by the bacteria; and, combining the bacteria, the culture medium, the first mixed metal oxide, and at least one electron donor in a reactor, wherein the bacteria reduces at least one of the first metal and the second metal from the higher to the lower oxidation state to form a second mixed metal oxide phase.
摘要:
A method for producing a film, the method comprising melting a layer of precursor particles on a substrate until at least a portion of the melted particles are planarized and merged to produce the film. The invention is also directed to a method for producing a photovoltaic film, the method comprising depositing particles having a photovoltaic or other property onto a substrate, and affixing the particles to the substrate, wherein the particles may or may not be subsequently melted. Also described herein are films produced by these methods, methods for producing a patterned film on a substrate, and methods for producing a multilayer structure.
摘要:
A method for producing mixed metal oxide compounds includes the steps of: providing a supply of a metal reducing bacteria; providing a culture medium suitable for growth of the bacteria; providing a first mixed metal oxide phase comprising at least a first and a second metal, at least one of the first and second metal being reducible from a higher to a lower oxidation state by the bacteria; and, combining the bacteria, the culture medium, the first mixed metal oxide, and at least one electron donor in a reactor, wherein the bacteria reduces at least one of the first metal and the second metal from the higher to the lower oxidation state to form a second mixed metal oxide phase.
摘要:
A variable resistance memory device that includes a first electrode, a second electrode, a variable resistance layer interposed between the first electrode and a second electrode. A metal oxide electrode is interposed between the first electrode and the variable resistance layer, and the metal oxide electrode does not include a nitrogen constituent.
摘要:
Disclosed is a charging apparatus usable with an image forming apparatus that includes a body to be charged; a housing to rotatably support the body to be charged, a charging member to charge a surface of the body to be charged to a predetermined electric potential, a cleaning member to clean foreign materials remaining on the surface of the body to be charged, and a cleaning member supporting bracket disposed in the housing to support the cleaning member and the charging member.
摘要:
A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer.
摘要:
Disclosed is a charging apparatus usable with an image forming apparatus that includes a body to be charged; a housing to rotatably support the body to be charged, a charging member to charge a surface of the body to be charged to a predetermined electric potential, a cleaning member to clean foreign materials remaining on the surface of the body to be charged, and a cleaning member supporting bracket disposed in the housing to support the cleaning member and the charging member.