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公开(公告)号：US07995984B2
公开(公告)日：2011-08-09
申请号：US12244908
申请日：2008-10-03
申请人： Tomoaki Kudaishi , Satoshi Sakurai , Takayuki Tsutsui , Masashi Yamaura , Reiichi Arai , Takayuki Maehara
发明人： Tomoaki Kudaishi , Satoshi Sakurai , Takayuki Tsutsui , Masashi Yamaura , Reiichi Arai , Takayuki Maehara
IPC分类号： H04B1/28
CPC分类号： H01L24/49 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0655 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/484 , H01L2224/48599 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/15192 , H01L2924/181 , H01L2924/19042 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another. This coupling is carried out by the bonding wires formed in the surface of the wiring board and the bonding wires formed inside the wiring board.
摘要翻译： 本发明的目的在于减少安装在布线板上的各引线的独占区域，用于将半导体芯片的功率放大单元和第二半导体芯片的天线开关耦合到半导体器件中，该半导体器件配置RF模块 。 在RF模块中，第一半导体芯片和第二半导体芯片并排安装在布线板的中心区域中。 第一半导体芯片由放大器电路和控制电路形成，并且包括硅衬底或化合物半导体衬底。 另一方面，第二半导体芯片由天线开关形成，并且包括硅衬底或化合物半导体衬底。 第一半导体芯片的焊盘和第二半导体芯片的焊盘彼此分别电耦合。 通过形成在布线板的表面的接合线和形成在布线基板内的接合线进行该耦合。
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公开(公告)号：US20090130996A1
公开(公告)日：2009-05-21
申请号：US12244908
申请日：2008-10-03
申请人： Tomoaki Kudaishi , Satoshi Sakurai , Takayuki Tsutsui , Masashi Yamaura , Reiichi Arai , Takayuki Maehara
发明人： Tomoaki Kudaishi , Satoshi Sakurai , Takayuki Tsutsui , Masashi Yamaura , Reiichi Arai , Takayuki Maehara
CPC分类号： H01L24/49 , H01L24/45 , H01L24/48 , H01L24/73 , H01L25/0655 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/484 , H01L2224/48599 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12032 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/15192 , H01L2924/181 , H01L2924/19042 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another. This coupling is carried out by the bonding wires formed in the surface of the wiring board and the bonding wires formed inside the wiring board.
摘要翻译： 本发明的目的在于减少安装在布线板上的各引线的独占区域，用于将半导体芯片的功率放大单元和第二半导体芯片的天线开关耦合到半导体器件中，该半导体器件配置RF模块 。 在RF模块中，第一半导体芯片和第二半导体芯片并排安装在布线板的中心区域中。 第一半导体芯片由放大器电路和控制电路形成，并且包括硅衬底或化合物半导体衬底。 另一方面，第二半导体芯片由天线开关形成，并且包括硅衬底或化合物半导体衬底。 第一半导体芯片的焊盘和第二半导体芯片的焊盘彼此分别电耦合。 通过形成在布线板的表面的接合线和形成在布线基板内的接合线进行该耦合。
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