摘要:
In this resilient multi layered member, there are provided as laminated together: a surface skin layer, formed of PVC resin powder made into a gel, on the outside side of the resilient multi layered member; a foam material layer, formed from foamed PVC resin powder, the outer side of which is adhered to the inner side of the surface skin layer; a cushion material layer, the outer side of which is adhered to the inner side of the foam material layer; and a substantially stiff core material layer, the outer side of which is adhered to the inner side of the cushion material layer, on the inside side of the resilient multi layered member. There may be further included an adhesive layer by means of which the outer side of the cushion material layer is adhered to the inner side of the foam material layer. The cushion material layer may be formed from urethane foam, or from non woven fabric, which may be a felt material, and may have a density greater than about 200 grams per square meter. This density may more particularly be between about 260 grams per square meter and about 300 grams per square meter. Alternatively, the cushion material layer may be formed from compressed urethane material, which may be compressed by a factor of from about 50% to about 80%, and may have a density of between about 0.05 grams per cubic centimeter and about 0.10 grams per cubic centimeter.
摘要:
A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.
摘要:
A vehicle direction estimation section estimates an absolute direction of a heading direction of a vehicle based on GPS information and vehicle information. A satellite direction estimation section estimates an absolute direction of a target satellite of several satellites for positioning based on corresponding GPS information, and estimates a relative direction of the target satellite with respect to the heading direction based on the estimated absolute direction of the heading direction and the estimated absolute direction of the target satellite. A shield determination section determines a shielded state of the target satellite by determining whether a signal strength of a satellite signal from the target satellite is greater than a threshold value relative to a target partition of several partitions into which a three-dimensional sphere with respect to the heading direction is divided, the target partition which the calculated relative direction of the target satellite belongs to.
摘要:
An image pickup device picks-up forward images, and a GPS information acquiring section acquires satellite information that includes Doppler frequencies. A position/velocity vector computing section computes a velocity vector by using the Doppler frequencies. A locus computing section computes a locus of positions of ones own vehicle. A projected image generating section generates, from the forward images, projected images that are projected onto a road surface. A local map generating section records road surface images, that are obtained for respective points on the locus of ones own vehicle, at respective regions of a local map that is determined on the basis of a traveling direction of a moving body at each point on the locus and a set position and a posture of the image pickup device. Due thereto, a local map generating device can, by a simple structure, generate a highly accurate map.
摘要:
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
摘要:
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
摘要:
There is provided a technique for effectively removing a metallic element for promoting crystallization in a semiconductor film with a crystalline structure after the semiconductor film is obtained using the metallic element, to reduce a variation between elements. In a step of forming a gettering site, a plasma CVD method is used and a film formation is conducted using raw gas including monosilane, noble gas, and nitrogen to obtain a semiconductor film which includes the noble gas element at a high concentration, specifically, a concentration of 1×1020/cm3 to 1×1021/cm3 and has an amorphous structure, typically, an amorphous silicon film.
摘要翻译:提供一种技术,用于在使用金属元件获得半导体膜之后,有效地去除在具有晶体结构的半导体膜中促进结晶的金属元素,以减少元件之间的变化。 在形成吸气部位的工序中,使用等离子体CVD法,使用含有甲硅烷,惰性气体和氮气的原料气进行成膜,得到高浓度的惰性气体元素的半导体膜, 浓度为1×10 20 / cm 3至1×10 21 / cm 3,并且具有无定形结构,通常为 非晶硅膜。
摘要:
An adaptive communication apparatus for use in a multicarrier transmission system in which data sequence to be transmitted is divided into a plurality of data sequences, and these data sequences are converted into a high-frequency signal including a plurality of carriers allocated different frequencies and radio-transmitted in parallel. In the adaptive communication apparatus, a received high-frequency signal is separated into a plurality of carriers by a wave separator. The frequency characteristic of the received high-frequency signal is corrected by a frequency characteristic compensation unit. The frequency characteristic compensation unit is controlled by a controller through use of the high-frequency signal subjected to signal processing by the frequency characteristic compensation unit and the wave separator. The high-frequency signal thus processed by the frequency characteristic compensation unit and the wave separator is demodulated by a demodulator in order to output a plurality of data sequences corresponding to the respective carriers. The original data is reproduced by a parallel-to-serial converter from the plurality of data sequences corresponding to the respective carriers.
摘要:
A photosensitive material processing apparatus includes plural processing tanks each to process a photosensitive material; plural cartridges each to fill solid processing agents for replenishment used in each of the plural processing tanks. The apparatus further includes plural replenishing devices each to replenish the solid processing agent in each of the cartridges into each of the processing tanks; a memory to store information indicating the standard quantity and information of an allowable quantity in surplus or shortage against the standard quantity which is a limited quantity allowing replenishment; a residual quantity detector to give an output signal corresponding to the solid processing agent whose residual quantity reaches zero; and a solid processing agent replenishment controller to control the replenishment of solid processing agents in the cartridges other than a cartridge for which the output signal is given, based on the information of the quantity for overs and shorts against standard stored in the memory.
摘要:
An image pickup device picks-up forward images, and a GPS information acquiring section acquires satellite information that includes Doppler frequencies. A position/velocity vector computing section computes a velocity vector by using the Doppler frequencies. A locus computing section computes a locus of positions of ones own vehicle. A projected image generating section generates, from the forward images, projected images that are projected onto a road surface. A local map generating section records road surface images, that are obtained for respective points on the locus of ones own vehicle, at respective regions of a local map that is determined on the basis of a traveling direction of a moving body at each point on the locus and a set position and a posture of the image pickup device. Due thereto, a local map generating device can, by a simple structure, generate a highly accurate map.