公开(公告)号：US06646177B2

公开(公告)日：2003-11-11

申请号：US09929385

申请日：2001-08-14

申请人： Tomonori Takahashi ,  Hitoshi Sakai ,  Naoyuki Ogawa

发明人： Tomonori Takahashi ,  Hitoshi Sakai ,  Naoyuki Ogawa

IPC分类号： C07C7144

CPC分类号： C07C7/144 ,  C07C15/08

摘要： A method for separating p-xylene by separating and recovering only p-xylene from a p-xylene-containing raw material mixture under high-temperature and high-pressure conditions using a zeolite membrane as a separating membrane is provided. The p-xylene partial pressure at the raw material side of the separating membrane is kept at a sufficiently high pressure and the p-xylene partial pressure at the recovery side of the separating membrane is controlled at a pressure which is not higher than the inflection point of p-xylene adsorption curve. This method for separating p-xylene using a zeolite membrane as a separating membrane can secure a sufficient p-xylene permeation amount and has industrial applicability.

摘要翻译： 提供了一种通过使用沸石膜作为分离膜在高温和高压条件下从含对二甲苯的原料混合物中仅分离和回收对二甲苯来分离对二甲苯的方法。 将分离膜的原料侧的对二甲苯分压保持在足够高的压力下，将分离膜的回收侧的对二甲苯分压控制在不高于拐点的压力 的对二甲苯吸附曲线。 使用沸石膜作为分离膜分离对二甲苯的方法可以确保足够的对二甲苯渗透量并具有工业实用性。

公开(公告)号：US5980989A

公开(公告)日：1999-11-09

申请号：US602845

申请日：1996-02-26

申请人： Tomonori Takahashi ,  Shinichi Kosaka

发明人： Tomonori Takahashi ,  Shinichi Kosaka

IPC分类号： B01D69/14 ,  B01D71/02 ,  C01B3/50 ,  C01B3/56 ,  B01D67/00 ,  B01D69/00

CPC分类号： B01D67/0069 ,  B01D67/0088 ,  B01D69/141 ,  B01D71/022 ,  C01B3/503 ,  C01B3/505 ,  B01D2323/46 ,  B01D2325/04 ,  B01D2325/22 ,  C01B2203/0405 ,  C01B2203/0475

摘要： A gas separator is here disclosed in which a metal for separating a gas is filled into pores opened on the surface of a porous substrate to close them. The thus constituted gas separator can prevent a material gas from leaking into a purified gas. A method for preparing the gas separator is also disclosed which comprises an activation step of immersing the porous substrate having a pair of surfaces in a solution containing an activated metal, while a pressure difference is set between the pair of surfaces, and a chemical plating step of filling the metal for separating the gas into the pores opened on the surface of the porous substrate to close these pores by chemical plating.

摘要翻译： PCT No.PCT / JP94 / 01046 Sec。 371日期1996年2月26日 102（e）日期1996年2月26日PCT提交1994年6月28日PCT公布。 出版物WO96 / 00608 日本1996年1月11日这里公开了一种气体分离器，其中用于分离气体的金属被填充到在多孔基材的表面上开口的孔中以封闭它们。 这样构成的气体分离器可以防止原料气体泄漏到净化气体中。 还公开了一种制备气体分离器的方法，其包括将具有一对表面的多孔基材浸渍在含有活化金属的溶液中的活化步骤，同时在一对表面之间设置压力差，以及化学镀层步骤 填充用于将气体分离成在多孔基材的表面上开口的孔中的金属，以通过化学镀来封闭这些孔。

公开(公告)号：US5897970A

公开(公告)日：1999-04-27

申请号：US961502

申请日：1997-10-30

申请人： Manabu Isomura ,  Takao Soma ,  Tomonori Takahashi

发明人： Manabu Isomura ,  Takao Soma ,  Tomonori Takahashi

IPC分类号： B01D53/22 ,  B01J19/24 ,  C01B3/32 ,  C01B3/34 ,  C01B3/38 ,  C01B3/50 ,  H01M8/00 ,  H01M8/06 ,  H01M16/00

CPC分类号： H01M8/0631 ,  B01J19/2475 ,  C01B3/32 ,  C01B3/323 ,  C01B3/34 ,  C01B3/38 ,  C01B3/382 ,  C01B3/386 ,  C01B3/501 ,  H01M8/0612 ,  B01J2219/0011 ,  B01J2219/00117 ,  B01J2219/00159 ,  C01B2203/0244 ,  C01B2203/041 ,  C01B2203/0465 ,  C01B2203/047 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/0822 ,  C01B2203/0827 ,  C01B2203/0844 ,  C01B2203/0866 ,  C01B2203/1064 ,  C01B2203/1076 ,  C01B2203/1223 ,  C01B2203/1288 ,  C01B2203/142 ,  C01B2203/1604 ,  C01B2203/82 ,  Y02P20/126 ,  Y02P20/128

摘要： There is a system for producing high-purity hydrogen by reforming a hydrocarbon and/or an oxygen atom-containing hydrocarbon to form a reformed gas containing hydrogen and separating the hydrogen from said gas. The system includes a hydrocarbon source, a water source, an oxygen source, a vaporization chamber connecting with the hydrocarbon source, the water source and the oxygen source, and a reforming chamber provided with a catalyst for steam reforming and partial oxidation and a hydrogen-separating membrane. The reforming chamber is thermally connected with the vaporization chamber. A process for producing high-purity hydrogen includes heating a reforming chamber provided with a hydrogen-separating membrane, feeding, into the reforming chamber, hydrocarbon, steam and oxygen or air to give rise to steam reforming and partial oxidation therein to produce a reaction gas, and passing the reaction gas through the hydrogen-separating membrane to recover high-purity hydrogen. The heat possessed by the portion of the reaction gas not permeable into the hydrogen-separating membrane and the heat generated by the partial oxidation are utilized for the heating and reforming of the hydrocarbon, water and oxygen or air.

摘要翻译： 存在通过重整烃和/或含氧原子的烃来形成含氢的重整气体并从所述气体中分离出氢气的方法来生产高纯度氢气。 该系统包括烃源，水源，氧源，与烃源连接的蒸发室，水源和氧源，以及设置有用于蒸汽重整和部分氧化的催化剂的重整室， 分离膜。 重整室与蒸发室热连接。 一种生产高纯度氢的方法包括加热设置有氢分离膜的重整室，向重整室供给碳氢化合物，蒸气和氧气或空气，引起蒸汽重整和部分氧化，产生反应气体 ，并使反应气体通过氢分离膜以回收高纯度氢。 反应气体不能透过氢分离膜的部分所产生的热量以及由部分氧化产生的热量用于烃，水和氧气或空气的加热和重整。

公开(公告)号：US5705129A

公开(公告)日：1998-01-06

申请号：US626314

申请日：1996-04-02

申请人： Tomonori Takahashi ,  Naoyuki Ogawa ,  Toshihiro Yoshida ,  Yuji Katsuda

发明人： Tomonori Takahashi ,  Naoyuki Ogawa ,  Toshihiro Yoshida ,  Yuji Katsuda

IPC分类号： G01N27/12 ,  G01N33/00 ,  G01N27/04

CPC分类号： G01N33/0037 ,  G01N27/12

摘要： An NOx sensor has the sensor element made of an oxide, the resistance of which is varied in response to an NOx component in a gas to be measured, and a measuring portion for measuring a resistance variation of the sensor element and for detecting an NOx concentration in the gas to be measured. A catalyst is arranged at an upstream side of a flow of the gas to be measured with respect reach to the sensor element, which makes a partial pressure ratio of NO/NO.sub.2 reach to an equilibrium state and removes a CO component from the gas to be measured. A heater for adjusting a temperature is arranged at a position close to the sensor element, which maintains temperatures of the sensor element and the catalyst constant. An O.sub.2 sensor is arranged at a position close to the sensor element so that the measuring portion can detect accurately the concentration of Nox in the measurement gas by reference to the resistance of the sensor element.

摘要翻译： NOx传感器具有由氧化物制成的传感器元件，其电阻响应待测气体中的NOx成分而变化，测量部分用于测量传感器元件的电阻变化并用于检测NOx浓度 在要测量的气体中。 催化剂被布置在相对于传感器元件的被测量气体的流动的上游侧，这使得NO / NO 2的分压比达到平衡状态并从气体中除去CO成分 测量。 用于调节温度的加热器布置在接近传感器元件的位置，其保持传感器元件的温度和催化剂的恒定。 O2传感器布置在靠近传感器元件的位置，使得测量部分可以参考传感器元件的电阻精确地检测测量气体中的Nox的浓度。

公开(公告)号：US5518530A

公开(公告)日：1996-05-21

申请号：US321894

申请日：1994-10-14

申请人： Osamu Sakai ,  Tomonori Takahashi ,  Tetsuhisa Abe ,  Tomoyuki Fujii

发明人： Osamu Sakai ,  Tomonori Takahashi ,  Tetsuhisa Abe ,  Tomoyuki Fujii

IPC分类号： B01D53/22 ,  B01D63/06 ,  B01D71/02 ,  C01B3/50

CPC分类号： B01D53/22 ,  B01D63/061 ,  C01B3/505 ,  B01D2257/108 ,  B01D2313/42

摘要： A connected body including a gas separator 10 and metallic members 21 and 22, each of which has a partly oxidized surface to be reliably connected with the gas separator. The gas separator includes a ceramic substrate 11 and a gas separation membrane 12 to be coated onto substrate 11. The substrate 11 is porous so that a gas molecule can pass therethrough, and gas separation membrane 12 is connected with metallic members 21 and 22 by a glass 15 having a thermal expansion coefficient of 5.0-8.0.times.10.sup.-6 /.degree.C. Glass 15 contacts with metal supporters 21 and 22 with a contact angle of 90.degree. or less. The connected body of a gas separator and metallic supporters and an apparatus for separating hydrogen gas from a mixed gas display excellent durability and are free from leakage at the joints during the separation of hydrogen gas at high temperatures and under high pressure.

摘要翻译： 连接体，包括气体分离器10和金属部件21和22，每个金属部件具有部分氧化的表面以与气体分离器可靠地连接。 气体分离器包括陶瓷基板11和要涂覆到基板11上的气体分离膜12.基板11是多孔的，使得气体分子可以通过，气体分离膜12通过一个金属部件21和22与金属部件21和22连接 玻璃15的热膨胀系数为5.0-8.0×10 -6 /℃。玻璃15与接触角为90°以下的金属支撑体21,22接触。 气体分离器和金属支撑体的连接体和用于从混合气体中分离氢气的装置显示出优异的耐久性，并且在高温和高压下氢气分离期间在接头处没有泄漏。

公开(公告)号：US5256491A

公开(公告)日：1993-10-26

申请号：US838494

申请日：1992-02-18

申请人： Takashi Ishida ,  Masato Kimura ,  Tomonori Takahashi

发明人： Takashi Ishida ,  Masato Kimura ,  Tomonori Takahashi

IPC分类号： A22C13/00 ,  B29C55/04 ,  B29C55/18 ,  B29C71/00 ,  B65D81/24 ,  B32B27/00

CPC分类号： B65D81/24 ,  A22C13/0013 ,  B29C55/04 ,  B29C55/18 ,  B29C71/0063 ,  A22C2013/004 ,  A22C2013/0059 ,  B29K2995/0051 ,  Y10S428/91 ,  Y10T428/31725 ,  Y10T428/31786 ,  Y10T428/31855 ,  Y10T428/31935

摘要： In one aspect of the invention, there is provided a molded article of crystalline thermoplastic resin with high gas barrier property of which the resin has crystalline and non-crystalline regions, the enhancing effect on gas barrier property of uniaxial-uniplanar orientation of the crystal axis direction of crystallites of said crystalline regions being used and the crystallites orientation being optimized by specific conditions. In another aspect of the invention, the molded article of the first aspect of the invention is further annealed to increase the crystallinity of the crystalline regions. The molded articles in accordance with the present invention have excellent gas barrier properties, and they are not only useful as chilled beef packaging materials, but also useful for retort food packaging, pouch packaging, coating and protecting materials for ham and sausages, processed fish, processed seafood products such as boiled fish paste, dried food for sprinkling, soup powder, parched rice cake, curry powder, spices, vegetables, fruits and pharmaceuticals.

公开(公告)号：US4882109A

公开(公告)日：1989-11-21

申请号：US245680

申请日：1988-09-19

申请人： Minoru Matsui ,  Tomonori Takahashi

发明人： Minoru Matsui ,  Tomonori Takahashi

IPC分类号： C04B41/50 ,  C04B41/87 ,  C23C4/10 ,  F02F7/00

CPC分类号： C04B41/009 ,  C04B41/5042 ,  C04B41/87 ,  C23C4/10 ,  C23C4/11 ,  F02F7/0087 ,  F05C2251/042

摘要： A silicon nitride sintered member comprises a silicon nitride sintered body and a zirconia layer coated onto the surface of the silicon nitride sintered body. The zirconia layer is preferably coated onto the surface of the silicon nitride sintered body through plasma spraying. The zirconia-coated silicon nitride sintered member has both high strength at high temperatures and excellent heat insulating property.

公开(公告)号：US4855263A

公开(公告)日：1989-08-08

申请号：US212317

申请日：1988-06-27

申请人： Shinji Kawasaki ,  Tomonori Takahashi

发明人： Shinji Kawasaki ,  Tomonori Takahashi

IPC分类号： C04B35/56 ,  C01B31/36 ,  C04B35/565

CPC分类号： C04B35/565

摘要： A silicon carbide sintered body containing given amounts of Mg, B and free carbon and having a density of not less than 2.80 g/cm.sup.3 is produced by adding given amounts of magnesium boride and carbon to silicon carbide powder having an average grain size of not more than 5 .mu.m, shaping and firing at 1,900.degree..about.2,300.degree. C. under vacuum or in an inert gas atmosphere.

公开(公告)号：US4818733A

公开(公告)日：1989-04-04

申请号：US28724

申请日：1987-03-23

申请人： Masahiro Shirai ,  Tomonori Takahashi

发明人： Masahiro Shirai ,  Tomonori Takahashi

IPC分类号： C04B35/584 ,  C04B35/58

CPC分类号： C04B35/584

摘要： A silicon nitride sintered body having high oxidation resistance and high-temperature strength is produced by starting from silicon nitride powder adjusted so as to have an oxygen content of 4.5-7.5 wt % as converted into SiO.sub.2. The sintered body has a molar ratio of metal ion (M) to oxygen ion (O) within a range of M:O=1.2.about.1:3 and contains no crystal of YSiO.sub.2 N form.

摘要翻译： 通过从被调整为氧化物含量为4.5-7.5重量％的氮化硅粉末开始转化为SiO 2，制备具有高耐氧化性和高温强度的氮化硅烧结体。 该烧结体在M:O = 1.2DIFFERENCE 1:3的范围内具有金属离子（M）与氧离子（O）的摩尔比，并且不含YSiO2N晶体。

公开(公告)号：US08617417B2

公开(公告)日：2013-12-31

申请号：US13107199

申请日：2011-05-13

申请人： Tadashi Inaba ,  Kazutaka Takahashi ,  Tomonori Takahashi ,  Atsushi Mizutani

发明人： Tadashi Inaba ,  Kazutaka Takahashi ,  Tomonori Takahashi ,  Atsushi Mizutani

IPC分类号： C09K13/00

CPC分类号： C11D11/0047 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5004

摘要： Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.

摘要翻译： 本发明提供能够抑制半导体衬底的金属腐蚀并且具有优异的半导体衬底上的等离子体蚀刻残留物和/或灰化残留物的可除去性的清洁组合物，半导体器件的制造方法和清洁方法 使用清洁组合物。 用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，以及使用该清洁组合物的半导体器件的制备方法和清洁方法，其中所述清洁组合物包含（组分a）水; （组分b）胺化合物; （组分c）羟胺和/或其盐; （组分d）季铵化合物; （组分e）有机酸; 和（组分f）水溶性有机溶剂; pH为6〜9。