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    Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer
    2.
    发明申请
    Cu-Ga Target, Method of Producing Same, Light-absorbing Layer Formed from Cu-Ga Based Alloy Film, and CIGS System Solar Cell Having the Light-absorbing Layer 审中-公开
    Cu-Ga靶及其制造方法，由Cu-Ga系合金膜形成的吸光层和具有光吸收层的CIGS系太阳能电池

    公开(公告)号：US20130319527A1

    公开(公告)日：2013-12-05

    申请号：US13988363

    申请日：2011-08-10

    申请人： Tomoya Tamura ,  Hiroyoshi Yamamoto ,  Masaru Sakamoto

    发明人： Tomoya Tamura ,  Hiroyoshi Yamamoto ,  Masaru Sakamoto

    IPC分类号： C23C14/34 ,  H01L31/0272 ,  C22C28/00 ,  B22F3/14 ,  C22C9/00

    CPC分类号： H01L31/0272 ,  B22F3/14 ,  B22F9/04 ,  B22F2998/10 ,  C22C1/0425 ,  C22C9/00 ,  C22C28/00 ,  C23C14/3414 ,  H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder. Provided are a sputtering target having very low compositional deviation and high density; a method of producing the target; a light-absorbing layer having a Cu—Ga based alloy film; and a CIGS solar cell including the light-absorbing layer.

    摘要翻译： Ga浓度为40〜50原子％的Cu-Ga合金烧结致密溅射靶，其余为Cu，其特征在于，相对密度为80％以上，成分偏差 的Ga浓度在所需组成的±0.5at％以内。 将Ga浓度为40〜50原子％，Cu作为余量的Cu-Ga合金烧结体型溅射靶的制造方法，其特征在于，将Cu和Ga原料熔融冷却/粉碎至 生成Cu-Ga合金原料粉末，将所得材料粉末进一步热压，保持温度在混合原料粉末的熔点和低于熔点15℃的温度之间， 对烧结的混合原料粉末施加400kgf / cm 2以上的压力。 提供具有非常低的组成偏差和高密度的溅射靶; 生产目标的方法; 具有Cu-Ga基合金膜的光吸收层; 以及包括光吸收层的CIGS太阳能电池。

    Cu-Ga Alloy Sputtering Target and Method for Producing Same
    3.
    发明申请
    Cu-Ga Alloy Sputtering Target and Method for Producing Same 审中-公开
    Cu-Ga合金溅射靶及其制造方法

    公开(公告)号：US20140001039A1

    公开(公告)日：2014-01-02

    申请号：US14004289

    申请日：2012-07-06

    申请人： Tomoya Tamura ,  Masaru Sakamoto

    发明人： Tomoya Tamura ,  Masaru Sakamoto

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3414 ,  B22D11/004 ,  C22C9/00 ,  C22F1/00 ,  C22F1/08

    摘要： The purpose of the invention is to provide a sputtering target formed from a Cu—Ga alloy having a Ga composition of 29 at % or more.[Problem] Since a Cu—Ga alloy becomes a brittle γ phase-single phase structure when the Ga composition becomes 29 at % or more, it cannot be subject to processes such as rolling and forging. Accordingly, the crystal grain size of the cast structure must be small and uniform so that the cast structure can be used as is.[Solution] It is possible to produce a melted and cast Cu—Ga alloy sputtering target containing 29 to 42.6 at % of Ga, and remainder being Cu and unavoidable impurities by continuously solidifying the Cu—Ga alloy sputtering target under solidifying conditions of a constant cooling rate or higher, wherein an average crystal grain size of a sputter front face is 3 mm or less, and a cross section structure of the target is a columnar structure that has grown in a direction from the sputter front face toward a center plane which is parallel to a sputter face.

    摘要翻译： 本发明的目的是提供一种由Ga组成为29原子％以上的Cu-Ga合金形成的溅射靶。 [问题]由于当Ga成分为29原子％以上时，Cu-Ga合金成为脆性γ相 - 单相结构，因此不能进行轧制和锻造等工序。 因此，铸造结构的晶粒尺寸必须小且均匀，从而可以直接使用铸造结构。 [解决方案]通过在恒定的固化条件下连续固化Cu-Ga合金溅射靶，可以制造含有29〜42.6at％的Ga的熔融铸造的Cu-Ga合金溅射靶，余量为Cu和不可避免的杂质 冷却速度或更高，其中溅射前面的平均晶粒尺寸为3mm以下，靶的截面结构是在从溅射前面朝向中心面的方向上生长的柱状结构， 平行于溅射面。

    SET-UP METHOD, COMPONENT MOUNTING METHOD, AND COMPONENT MOUNTING SYSTEM
    7.
    发明申请
    SET-UP METHOD, COMPONENT MOUNTING METHOD, AND COMPONENT MOUNTING SYSTEM 有权
    设置方法，组件安装方法和组件安装系统

    公开(公告)号：US20140090244A1

    公开(公告)日：2014-04-03

    申请号：US14116256

    申请日：2012-03-08

    申请人： Masaru Sakamoto

    发明人： Masaru Sakamoto

    IPC分类号： H05K3/30 ,  H05K3/00

    CPC分类号： H05K3/301 ,  H05K3/0008 ,  H05K13/0452 ,  H05K13/08 ,  H05K13/085 ,  Y10T29/4913 ,  Y10T29/49778

    摘要： The present invention relates to a setup method for deciding component feeding apparatuses to be attached to each of mounting machines in a component mounting system. The setup method includes a first step of deciding component feeding apparatuses to be attached to each of the mounting machines based on substrate data defining components to be mounted by each of the mounting machines; a second step of determining whether or not there is within the components included in the substrate data a sole mounted component to be mounted by only one mounting machine among the multiple mounting machines; and a third step of deciding, when the determination is made that the sole mounted component exists, to attach component feeding apparatuses feeding the sole mounted component or an alternative component capable of replacing the sole mounted component onto at least one mounting machine other than the only one mounting machine.

    摘要翻译： 本发明涉及一种用于在部件安装系统中确定要安装到每个安装机上的部件供给装置的设置方法。 该设置方法包括：第一步骤，基于基于定义要由每个安装机器安装的部件的基板数据来确定要附接到每个安装机器的部件供给装置; 确定在所述多个安装机中仅由一个安装机安装的唯一安装部件中是否存在包括在所述基板数据中的部件内的第二步骤; 以及第三步骤，当确定存在唯一安装的部件时，将馈送鞋底安装部件的部件进给装置或能够将唯一安装的部件替换到除了唯一安装部件之外的至少一个安装机器的替代部件 一台安装机。

    Indium Target And Manufacturing Method Thereof
    8.
    发明申请
    Indium Target And Manufacturing Method Thereof 有权
    铟目标及其制造方法

    公开(公告)号：US20130037408A1

    公开(公告)日：2013-02-14

    申请号：US13504329

    申请日：2011-07-07

    申请人： Yousuke Endo ,  Masaru Sakamoto

    发明人： Yousuke Endo ,  Masaru Sakamoto

    IPC分类号： C23C14/06 ,  B23P17/00 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  H01J37/3414 ,  H01J37/3426 ,  Y10T29/49991

    摘要： The present invention provides an indium target and manufacturing method thereof, where deposition rate is high, initial discharge voltage is low, and deposition rate and discharge voltage, from the start of sputtering to the end of sputtering, are stable. In the indium target, an aspect ratio (length of longer direction/length of shorter direction) of crystal particle, observed from cross-section direction of the target, is 2.0 or less.

    摘要翻译： 本发明提供了一种铟靶及其制备方法，其沉积速率高，初始放电电压低，并且从溅射开始到溅射结束时的沉积速率和放电电压都是稳定的。 在铟靶中，从靶的截面方向观察到的结晶粒子的长径比（长度方向/长度方向的长度）为2.0以下。

    ZOOM LENS AND IMAGE PICKUP APPARATUS INCLUDING THE SAME
    9.
    发明申请
    ZOOM LENS AND IMAGE PICKUP APPARATUS INCLUDING THE SAME 有权
    变焦镜头和图像拾取装置包括它们

    公开(公告)号：US20120224269A1

    公开(公告)日：2012-09-06

    申请号：US13407297

    申请日：2012-02-28

    申请人： Masaru Sakamoto

    发明人： Masaru Sakamoto

    IPC分类号： G02B15/10

    CPC分类号： G02B15/17 ,  G02B13/22 ,  G02B15/10

    摘要： A zoom lens includes, in order from an object side to an image side, a first lens unit having a positive refractive power, which does not move for zooming, a second lens unit having a negative refractive power, which moves during zooming, a third lens unit having a negative refractive power, which moves during zooming, an aperture stop, and a fourth lens unit having a positive refractive power, which does not move for zooming. The fourth lens unit includes a first lens sub-unit, a focal length conversion optical system configured to be inserted into or removed from an optical path, and a second lens sub-unit. A focal length of the second lens sub-unit, a distance from the aperture stop to a lens surface at the most object side of the second lens sub-unit, and an F-number of the entire zoom lens at a wide-angle end are appropriately set.

    摘要翻译： 变焦透镜从物体侧到像侧依次包括具有正折射力的第一透镜单元，其不具有用于变焦的移动功能，具有在变焦期间移动的具有负折光力的第二透镜单元， 具有负折射力的透镜单元，其在变焦期间移动，孔径光阑和具有正折射力的第四透镜单元，其不能移动用于变焦。 第四透镜单元包括第一透镜子单元，被配置为插入到光路中或从光路移除的焦距转换光学系统和第二透镜子单元。 第二透镜子单元的焦距，从孔径光阑到第二透镜子单元的最物体侧的透镜表面的距离，以及广角端的变焦透镜整体的F数 适当设定。

    Detection of chromosomal abnormalities associated with breast cancer
    10.
    发明授权
    Detection of chromosomal abnormalities associated with breast cancer 失效
    检测与乳腺癌相关的染色体异常

    公开(公告)号：US08021837B2

    公开(公告)日：2011-09-20

    申请号：US11361316

    申请日：2006-02-24

    申请人： Daniel Pinkel ,  Joe W Gray ,  Anne Kallioniemi ,  Ollie-Pekka Kallioniemi ,  Frederic Waldman ,  Masaru Sakamoto

    发明人： Daniel Pinkel ,  Joe W Gray ,  Anne Kallioniemi ,  Ollie-Pekka Kallioniemi ,  Frederic Waldman ,  Masaru Sakamoto

    IPC分类号： C12Q1/68 ,  G01N33/566 ,  G01N33/53 ,  C07H21/02 ,  C07H21/04

    CPC分类号： C12Q1/6809 ,  C12Q1/6841 ,  C12Q1/6886 ,  C12Q2600/156 ,  G06F15/025 ,  Y10S436/813 ,  C12Q2545/114 ,  C12Q2537/157

    摘要： Disclosed are new methods comprising the use of in situ hybridization to detect abnormal nucleic acid sequence copy numbers in one or more genomes wherein repetitive sequences that bind to multiple loci in a reference chromosome spread are either substantially removed and/or their hybridization signals suppressed. The invention termed Comparative Genomic Hybridization (CGH) provides for methods of determining the relative number of copies of nucleic acid sequences in one or more subject genomes or portions thereof (for example, a tumor cell) as a function of the location of those sequences in a reference genome (for example, a normal human genome). The intensity(ies) of the signals from each labeled subject nucleic acid and/or the differences in the ratios between different signals from the labeled subject nucleic acid sequences are compared to determine the relative copy numbers of the nucleic acid sequences in the one or more subject genomes as a function of position along the reference chromosome spread. Amplifications, duplications and/or deletions in the subject genome(s) can be detected. Also provided is a method of determining the absolute copy numbers of substantially all RNA or DNA sequences in subject cell(s) or cell population(s).

    摘要翻译： 公开了包括使用原位杂交来检测一个或多个基因组中的异常核酸序列拷贝数的新方法，其中结合参考染色体扩增的多个基因座的重复序列基本上被去除和/或其杂交信号被抑制。 称为比较基因组杂交（CGH）的发明提供了确定一个或多个受试者基因组或其部分（例如肿瘤细胞）中核酸序列的相对拷贝数的方法，作为这些序列的位置的函数 参考基因组（例如，正常人类基因组）。 比较来自每个标记的对象核酸的信号的强度和/或来自标记的目标核酸序列的不同信号之间的比率差异，以确定一个或多个核酸序列中核酸序列的相对拷贝数 主题基因组作为沿着参考染色体扩散的位置的函数。 可以检测主题基因组中的扩增，重复和/或缺失。 还提供了确定受试细胞或细胞群体中基本上所有RNA或DNA序列的绝对拷贝数的方法。