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公开(公告)号：US20090128254A1
公开(公告)日：2009-05-21
申请号：US12289456
申请日：2008-10-28
申请人： Tomoyuki Goi , Kenta Nagai , Nobumi Harada , Mitsuru Miura , Shuichi Yoshida
发明人： Tomoyuki Goi , Kenta Nagai , Nobumi Harada , Mitsuru Miura , Shuichi Yoshida
IPC分类号： H01P1/10
CPC分类号： H03H7/465 , H04B1/006 , H04B1/0067
摘要： A high frequency electronic component includes a switch and a balun. The switch performs switching between a first transmission signal in the form of an unbalanced signal received at a first input port and a second transmission signal in the form of an unbalanced signal received at a second input port, and outputs one of the first and second transmission signals from an output port. The balun converts the transmission signal in the form of an unbalanced signal outputted form the output port of the switch to a transmission signal in the form of a balanced signal, and outputs this signal to a balanced input power amplifier.
摘要翻译： 高频电子部件包括开关和平衡 - 不平衡转换器。 交换机以在第一输入端口接收的不平衡信号的形式的第一传输信号和在第二输入端口处接收的不平衡信号的形式的第二传输信号之间进行切换，并且输出第一和第二传输 来自输出端口的信号。 平衡 - 不平衡转换器将以开关输出端口输出的不平衡信号的形式的发送信号转换为平衡信号形式的发送信号，并将该信号输出到平衡输入功率放大器。
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公开(公告)号：US20090128253A1
公开(公告)日：2009-05-21
申请号：US12289375
申请日：2008-10-27
申请人： Tomoyuki Goi , Kenta Nagai , Nobumi Harada , Mitsuru Miura
发明人： Tomoyuki Goi , Kenta Nagai , Nobumi Harada , Mitsuru Miura
IPC分类号： H01P1/10
CPC分类号： H04B1/006 , H04B1/0067
摘要： A high frequency electronic component includes: a first input terminal that receives a first transmission signal in the form of an unbalanced signal; a second input terminal that receives a second transmission signal in the form of a balanced signal; a balun that converts the second transmission signal in the form of a balanced signal received at the second input terminal to a second transmission signal in the form of an unbalanced signal and outputs this signal; and a switch. The switch performs switching between a signal received at a first input port and a signal received at a second input port, and outputs one of the signals from an output port. The first input port receives the first transmission signal received at the first input terminal. The second input port receives the second transmission signal in the form of an unbalanced signal outputted from the balun. The output port is connected to a power amplifier.
摘要翻译： 高频电子部件包括：第一输入端子，其以不平衡信号的形式接收第一传输信号; 接收平衡信号形式的第二传输信号的第二输入端; 平衡 - 不平衡变换器，其以第二输入端子接收的平衡信号的形式将第二传输信号转换为不平衡信号形式的第二传输信号，并输出该信号; 和开关。 开关执行在第一输入端口接收的信号与在第二输入端口接收的信号之间的切换，并从输出端口输出信号之一。 第一输入端口接收在第一输入端接收的第一传输信号。 第二输入端口以平衡 - 不平衡变换器输出的不平衡信号的形式接收第二传输信号。 输出端口连接到功率放大器。
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3.发明授权Surface electrode structure on ceramic multi-layer substrate and process for producing the same 有权陶瓷多层基板上的表面电极结构及其制造方法公开(公告)号：US06623842B2
公开(公告)日：2003-09-23
申请号：US09956011
申请日：2001-09-20
申请人： Fumio Uchikoba , Tomoyuki Goi
发明人： Fumio Uchikoba , Tomoyuki Goi
IPC分类号： B32B700
CPC分类号： H05K3/246 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/19105 , H03H3/08 , H05K1/092 , H05K3/4629 , Y10T428/12535 , Y10T428/12889 , Y10T428/12896 , Y10T428/12944 , Y10T428/24917 , H01L2224/05599
摘要： In a surface electrode structure on a ceramic multi-layer substrate having on the surface SAW device mounting surface electrodes for mounting flip chips as surface-acoustic-wave devices by gold-gold bonding and soldered parts mounting surface electrodes. Further, at least the lowermost layer is made of a sintered silver conductor which is partly buried in the ceramic multi-layer substrate, a nickel or a nickel alloy layer being contained as an intermediate layer, and the topmost layer being a gold layer. Thus, a surface electrode structure on a ceramic multi-layer substrate is suitable for both mounting of SAW devices by gold-gold bonding and mounting of other parts by soldering and which enable consistent mounting of individual parts using a ceramic multi-layer substrate to provide higher reliability.
摘要翻译： 在陶瓷多层基板上的表面电极结构中，具有表面SAW器件安装面电极，用于通过金 - 金接合安装倒装芯片作为表面声波器件和焊接部件安装表面电极。 此外，至少最下层由部分埋置在陶瓷多层基板中的烧结银导体，作为中间层包含镍或镍合金层，最顶层是金层构成。 因此，陶瓷多层基板上的表面电极结构适用于通过金 - 金键合安装SAW器件和通过焊接安装其它部件，并且能够使用陶瓷多层基板一致地安装各个部件以提供 更高的可靠性。
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公开(公告)号：US07978031B2
公开(公告)日：2011-07-12
申请号：US12353873
申请日：2009-01-14
申请人： Tomoyuki Goi , Takuya Adachi , Atsuhi Ajioka , Hitoshi Hachiga
发明人： Tomoyuki Goi , Takuya Adachi , Atsuhi Ajioka , Hitoshi Hachiga
IPC分类号： H05K1/18
CPC分类号： H05K1/0206 , H01L2224/48091 , H01L2224/48227 , H01L2924/19105 , H04B1/03 , H04B1/04 , H05K1/0231 , H05K1/0233 , H05K1/0243 , H05K1/0298 , H05K1/16 , H05K2201/1006 , H05K2201/10166 , H01L2924/00014
摘要： The present invention is provided with a high frequency module comprising a multilayered substrate, a power amplifier IC mounted on the upper surface of the multilayered substrate, first and second filters disposed substantially directly below the power amplifier IC in an inner layer of the multilayered substrate, and coupling-reducing ground vias disposed between the first filter and the second filter. At least the first filter is disposed substantially directly below the power amplifier IC. The coupling-reducing ground vias double as thermal vias for dissipating heat generated by the power amplifier IC.
摘要翻译： 本发明提供了一种高频模块，包括多层基板，安装在多层基板的上表面上的功率放大器IC，在多层基板的内层中基本上位于功率放大器IC的正下方布置的第一和第二滤波器， 以及设置在第一过滤器和第二过滤器之间的耦合减小接地通孔。 至少第一滤波器基本上设置在功率放大器IC的正下方。 作为散热由功率放大器IC产生的热量的热通孔，耦合减小接地通路是双重的。
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公开(公告)号：US20070262833A1
公开(公告)日：2007-11-15
申请号：US11783718
申请日：2007-04-11
IPC分类号： H01P1/203
CPC分类号： H01P1/20345
摘要： A high frequency module incorporates a layered substrate, a plurality of elements mounted on a top surface of the layered substrate, and a metallic casing that covers these elements. The plurality of elements mounted on the top surface of the layered substrate include a band-pass filter element. The band-pass filter element includes a plurality of conductor layers for band-pass filter and a plurality of dielectric layers for band-pass filter that implement a function of a band-pass filter, but does not include any conductor layer that functions as an electromagnetic shield. A conductor layer for grounding that the layered substrate includes and the casing are each opposed to the band-pass filter element, and thereby function as an electromagnetic shield for the band-pass filter element.
摘要翻译： 高频模块包括分层基板，安装在分层基板的顶表面上的多个元件和覆盖这些元件的金属外壳。 安装在层状基板的上表面上的多个元件包括带通滤光元件。 带通滤波器元件包括用于带通滤波器的多个导体层和用于带通滤波器的多个电介质层，其实现带通滤波器的功能，但不包括用作带通滤波器的功能的任何导体层 电磁屏蔽 层叠基板包括的接地用导体层和壳体各自与带通滤波器元件相对，并且由此用作带通滤波器元件的电磁屏蔽。
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公开(公告)号：US07663455B2
公开(公告)日：2010-02-16
申请号：US11783718
申请日：2007-04-11
IPC分类号： H01P3/08
CPC分类号： H01P1/20345
摘要： A high frequency module incorporates a layered substrate, a plurality of elements mounted on a top surface of the layered substrate, and a metallic casing that covers these elements. The plurality of elements mounted on the top surface of the layered substrate include a band-pass filter element. The band-pass filter element includes a plurality of conductor layers for band-pass filter and a plurality of dielectric layers for band-pass filter that implement a function of a band-pass filter, but does not include any conductor layer that functions as an electromagnetic shield. A conductor layer for grounding that the layered substrate includes and the casing are each opposed to the band-pass filter element, and thereby function as an electromagnetic shield for the band-pass filter element.
摘要翻译： 高频模块包括分层基板，安装在分层基板的顶表面上的多个元件和覆盖这些元件的金属外壳。 安装在层状基板的上表面上的多个元件包括带通滤光元件。 带通滤波器元件包括用于带通滤波器的多个导体层和用于带通滤波器的多个电介质层，其实现带通滤波器的功能，但不包括用作带通滤波器的功能的任何导体层 电磁屏蔽 层叠基板包括的接地用导体层和壳体各自与带通滤波元件相对，从而起带通滤波元件的电磁屏蔽的作用。
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7.发明授权公开(公告)号：US07206551B2
公开(公告)日：2007-04-17
申请号：US10912244
申请日：2004-08-06
申请人： Masami Itakura , Tomoyuki Goi , Takuya Adachi
发明人： Masami Itakura , Tomoyuki Goi , Takuya Adachi
摘要： A high frequency switch module comprises an antenna port, a plurality of transmission signal ports, a plurality of reception signal ports, a high frequency switch, a plurality of LPFs and a plurality of phase adjusting lines. The high frequency switch allows one signal port among the transmission signal ports and the reception signal ports to be selectively connected to the antenna port. The high frequency switch includes a field-effect transistor made of a GaAs compound semiconductor. Each of the phase adjusting lines connects the high frequency switch to each of the LPFs. Each of the phase adjusting lines adjusts a phase difference between a progressive wave of a harmonic resulting from a transmission signal and produced at the high frequency switch and a reflected wave resulting from reflection of the progressive wave from each of the LPFs such that the power of a composite wave made up of the progressive wave and the reflected wave is made lower at the point of the high frequency switch.
摘要翻译： 高频开关模块包括天线端口，多个发送信号端口，多个接收信号端口，高频开关，多个LPF和多个相位调整线。 高频开关允许传输信号端口中的一个信号端口和接收信号端口选择性地连接到天线端口。 高频开关包括由GaAs化合物半导体制成的场效应晶体管。 每个相位调整线将高频开关连接到每个LPF。 每个相位调整线调整由传输信号产生的并在高频开关产生的谐波的逐行波与来自每个LPF的逐行波反射产生的反射波之间的相位差，使得 在高频开关点使由逐行波和反射波构成的复合波变低。
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8.发明申请公开(公告)号：US20050032484A1
公开(公告)日：2005-02-10
申请号：US10912244
申请日：2004-08-06
申请人： Masami Itakura , Tomoyuki Goi , Takuya Adachi
发明人： Masami Itakura , Tomoyuki Goi , Takuya Adachi
摘要： A high frequency switch module comprises an antenna port, a plurality of transmission signal ports, a plurality of reception signal ports, a high frequency switch, a plurality of LPFs and a plurality of phase adjusting lines. The high frequency switch allows one signal port among the transmission signal ports and the reception signal ports to be selectively connected to the antenna port. The high frequency switch includes a field-effect transistor made of a GaAs compound semiconductor. Each of the phase adjusting lines connects the high frequency switch to each of the LPFs. Each of the phase adjusting lines adjusts a phase difference between a progressive wave of a harmonic resulting from a transmission signal and produced at the high frequency switch and a reflected wave resulting from reflection of the progressive wave from each of the LPFs such that the power of a composite wave made up of the progressive wave and the reflected wave is made lower at the point of the high frequency switch.
摘要翻译： 高频开关模块包括天线端口，多个发送信号端口，多个接收信号端口，高频开关，多个LPF和多个相位调整线。 高频开关允许传输信号端口中的一个信号端口和接收信号端口选择性地连接到天线端口。 高频开关包括由GaAs化合物半导体制成的场效应晶体管。 每个相位调整线将高频开关连接到每个LPF。 每个相位调整线调整由传输信号产生的并在高频开关产生的谐波的逐行波与由每个LPF的逐行波的反射产生的反射波之间的相位差，使得 在高频开关点使由逐行波和反射波构成的复合波变低。
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