FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM
    4.
    发明申请
    FILM FORMATION DEVICE AND FILM FORMATION METHOD FOR FORMING METAL FILM 审中-公开
    薄膜形成装置和薄膜形成方法形成金属薄膜

    公开(公告)号:US20150014178A1

    公开(公告)日:2015-01-15

    申请号:US14371036

    申请日:2013-02-21

    IPC分类号: C25D17/00 C25D21/14

    摘要: Provided are a film formation device and a film formation method for forming a metal film, with which metal films with a desired thickness can be continuously formed on surfaces of a plurality of substrates. A film formation device 1A includes at least a positive electrode 11, a negative electrode 12, a solid electrolyte membrane 13 arranged on a surface of the positive electrode 12, between. the positive electrode and a substrate to serve as the negative electrode, and a power supply unit E adapted to apply a voltage across the positive electrode 11 and the substrate B. A voltage is applied across the positive electrode 11 and the substrate B to deposit metal on a surface of the substrate from metal ions contained in the solid electrolyte membrane 13, whereby a metal film F made of metal is formed, The positive electrode 11 is made of a porous body that allows a solution L containing metal ions to pass therethrough and supplies the metal ions to the solid electrolyte membrane 13.

    摘要翻译: 提供一种用于形成金属膜的成膜装置和成膜方法,可以在多个基板的表面上连续地形成具有所需厚度的金属膜。 成膜装置1A至少包括正极11,负极12,布置在正极12的表面上的固体电解质膜13。 正电极和用作负极的衬底,以及适于在正电极11和衬底B两端施加电压的电源单元E.跨正电极11和衬底B施加电压以沉积金属 在固体电解质膜13中的金属离子的表面上形成由金属制成的金属膜F.正极11由允许含有金属离子的溶液L通过的多孔体构成, 将金属离子供给固体电解质膜13。

    High-side switch circuit
    6.
    发明授权
    High-side switch circuit 有权
    高侧开关电路

    公开(公告)号:US08604842B2

    公开(公告)日:2013-12-10

    申请号:US13425606

    申请日:2012-03-21

    IPC分类号: H03K3/00 H03K5/153

    摘要: The high-side switch circuit includes a first output MOS transistor that is connected, at a first end thereof, to a power supply terminal. The high-side switch circuit includes a second output MOS transistor that is connected to a second end of the first output MOS transistor at a first end thereof and to a voltage output terminal at a second end thereof. The high-side switch circuit includes a current detecting circuit that detects a current flowing through the first output MOS transistor and outputs a detection signal. The high-side switch circuit includes a first gate driver that applies a first control voltage to a gate of the first output MOS transistor. The high-side switch circuit includes a second gate driver that applies a second control voltage to a gate of the second output MOS transistor.

    摘要翻译: 高侧开关电路包括在其第一端处连接到电源端子的第一输出MOS晶体管。 高侧开关电路包括第二输出MOS晶体管,其在第一端连接到第一输出MOS晶体管的第二端,并在其第二端连接到电压输出端。 高侧开关电路包括电流检测电路,其检测流过第一输出MOS晶体管的电流并输出检测信号。 高侧开关电路包括对第一输出MOS晶体管的栅极施加第一控制电压的第一栅极驱动器。 高侧开关电路包括向第二输出MOS晶体管的栅极施加第二控制电压的第二栅极驱动器。

    Oil seal
    9.
    发明授权
    Oil seal 有权
    油封

    公开(公告)号:US08413995B2

    公开(公告)日:2013-04-09

    申请号:US12595417

    申请日:2008-02-22

    IPC分类号: F16J15/32

    CPC分类号: F16J15/324 F16J15/3244

    摘要: For an oil seal (1) having a seal lip (6) with a slope (7) at the side of sealed fluid and a slope (8) at the side opposite to the sealed fluid, and a screw section (9) provided on the slope (8) for pushing back sealed fluid by a pumping effect at a time of rotation, in order to achieve low torque characteristics based on fluid lubrication by increasing the thickness of an oil film on sliding surfaces, an intermediate surface (10) is provided between the slopes (7, 8), and an oppositely threaded screw section (11) for sucking the sealed fluid by a pumping effect is provided on the intermediate surface (10) without reaching the boundary (13) between the intermediate surface (10) and the slope (8), so that a threadless region is provided in the entire circumference between the screw section (11) and the boundary (13).

    摘要翻译: 对于具有在密封流体侧具有斜面(7)的密封唇(6)和与密封流体相对的一侧上的斜面(8)的油封(1)和设置在密封件 用于在旋转时通过泵送效果推回密封流体的斜面(8),以便通过增加滑动表面上的油膜的厚度来实现基于流体润滑的低扭矩特性,中间表面(10)是 设置在所述斜面(7,8)之间,并且在所述中间表面(10)上设置用于通过泵送效果吸附所述密封流体的相对螺纹的螺纹部(11),而不到达所述中间表面(10) )和斜面(8),使得在螺杆部分(11)和边界(13)之间的整个圆周上设置无螺纹区域。

    Audio dropout amplifier
    10.
    发明授权
    Audio dropout amplifier 失效
    音频放大放大器

    公开(公告)号:US08232838B2

    公开(公告)日:2012-07-31

    申请号:US12969773

    申请日:2010-12-16

    IPC分类号: H03F1/14

    摘要: According to embodiments, in a case that a source voltage is lowered and a potential difference between the source voltage and a ripple terminal voltage is below a constant potential difference, the ripple terminal voltage is lowered until the ripple terminal voltage reaches a first threshold value when a lowered value of the source voltage is equal to or larger than a predetermined voltage that exceeds the first threshold value by the constant potential difference, and the ripple terminal voltage is lowered until the ripple terminal voltage reaches a second threshold value smaller than the first threshold value when the lowered value of the source voltage is below the predetermined voltage.

    摘要翻译: 根据实施例,在源极电压降低并且源极电压和纹波端子电压之间的电位差低于恒定电位差的情况下,纹波端子电压降低直到纹波端子电压达到第一阈值, 源极电压的降低值等于或大于通过恒定电位差超过第一阈值的预定电压,并且纹波端电压降低直到纹波端电压达到小于第一阈值的第二阈值 当源电压的降低值低于预定电压时的值。