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公开(公告)号：US07521282B2
公开(公告)日：2009-04-21
申请号：US11984942
申请日：2007-11-26
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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公开(公告)号：US20080090386A1
公开(公告)日：2008-04-17
申请号：US11984943
申请日：2007-11-26
IPC分类号： H01L21/20
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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公开(公告)号：US20050118739A1
公开(公告)日：2005-06-02
申请号：US10502228
申请日：2002-12-17
申请人： Toshiaki Asahi , Kenji Sato , Atsutoshi Arakawa
发明人： Toshiaki Asahi , Kenji Sato , Atsutoshi Arakawa
摘要： A method for producing a compound semiconductor single crystal by a liquid encapsulated Czochralski method, including containing a semiconductor raw material and an encapsulating material in a raw material melt-containing portion having a first crucible having a bottom and a cylindrical shape and a second crucible disposed within the first crucible and having a communication hole communicating with the first crucible in a bottom portion thereof; melting the raw material by heating the raw material melt-containing portion; and growing a crystal by making a seed crystal contact with a surface of the raw material melt in a state covered with the encapsulating material and by pulling up the seed crystal. A heater temperature is controlled so that a diameter of a growing crystal becomes approximately equal to an inner diameter of the second crucible, and the crystal is grown by maintaining a surface of the growing crystal in a state covered with the encapsulating material until termination of crystal growth.
摘要翻译： 一种通过液体封装的Czochralski法制备化合物半导体单晶的方法，包括在具有底部和圆筒形状的第一坩埚的原料熔融物部分中包含半导体原料和封装材料，以及设置第二坩埚 在第一坩埚内并且在其底部具有与第一坩埚连通的连通孔; 通过加热原料熔融物部分来熔化原料; 并且通过在被封装材料覆盖的状态下使晶种与原料熔融物的表面接触并且拉起晶种来生长晶体。 控制加热器温度使得生长的晶体的直径变得近似等于第二坩埚的内径，并且通过将生长晶体的表面保持在被封装材料覆盖的状态直到晶体结束来生长晶体 成长。
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4.发明申请Process for producing single crystal of compound semiconductor and crystal growing apparatus 有权制备化合物半导体的单晶和晶体生长装置的方法公开(公告)号：US20050000403A1
公开(公告)日：2005-01-06
申请号：US10497916
申请日：2003-10-03
申请人： Toshiaki Asahi , Kenji Sato , Takayuki Yabe , Atsutoshi Arakawa
发明人： Toshiaki Asahi , Kenji Sato , Takayuki Yabe , Atsutoshi Arakawa
CPC分类号： C30B27/02 , C30B15/12 , C30B29/48 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).
摘要翻译： 在使用具有双坩埚结构的晶体生长装置的LEC方法制造化合物半导体单晶的制造方法中，通过用具有贯通槽的板状构件覆盖第二坩埚而使晶体长大， 能够将具有尖端的晶种保持部的晶体提升轴引入到第二坩埚中，形成第二坩埚内的气氛几乎不变化（半密封结构）的状态。
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5.发明授权Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal 失效共组14（4B）元素制备ZnTe系化合物半导体单晶的方法公开(公告)号：US07696073B2
公开(公告)日：2010-04-13
申请号：US11984943
申请日：2007-11-26
IPC分类号： H01L21/38 , H01L29/22 , H01L31/0296
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比更小的掺杂量的所需载流子浓度，并且可以提高所得晶体的结晶度。
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6.发明授权Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效制备ZnTe系化合物半导体单晶，ZnTe系化合物半导体单晶及半导体器件的方法公开(公告)号：US07629625B2
公开(公告)日：2009-12-08
申请号：US11984944
申请日：2007-11-26
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。
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公开(公告)号：US20080090327A1
公开(公告)日：2008-04-17
申请号：US11984941
申请日：2007-11-26
IPC分类号： H01L21/06
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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公开(公告)号：US07517720B2
公开(公告)日：2009-04-14
申请号：US11984941
申请日：2007-11-26
IPC分类号： H01L21/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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9.发明申请Method for producing ZnTe system compound semiconductor single crystal, ZnTe system compound semiconductor single crystal, and semiconductor device 失效制备ZnTe系化合物半导体单晶，ZnTe系化合物半导体单晶及半导体器件的方法公开(公告)号：US20080090390A1
公开(公告)日：2008-04-17
申请号：US11984944
申请日：2007-11-26
IPC分类号： H01L21/20
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。
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公开(公告)号：US20080089831A1
公开(公告)日：2008-04-17
申请号：US11984950
申请日：2007-11-26
IPC分类号： C01B19/00
CPC分类号： C30B29/48 , C30B23/002 , C30B25/02 , H01L21/02411 , H01L21/0248 , H01L21/02554 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02623 , H01L21/02631 , H01L29/227 , H01L33/285
摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.
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