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公开(公告)号：US07579665B2
公开(公告)日：2009-08-25
申请号：US11189784
申请日：2005-07-27
IPC分类号： H01L31/0232
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14647 , H01L27/14831
摘要： A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.
摘要翻译： 提供一种其中布置有多个光接收装置的光接收装置和图像拾取装置。 光接收装置包括单个半导体基板和具有第一光电转换部分和第二光电转换部分的光接收装置。 单个半导体衬底以交替叠层的方式包括第一导电类型的区域和第二导电类型的区域。 在第一导电类型和第二导电类型的区域之间的每个接合面的深度形成为使得主要在蓝色或红色波长区域中的光可以光电转换的深度。 第一光电转换部分和第二光电转换部分的各个检测波长比蓝色波长区域的中心波长长，并且比红色波长区域的中心波长短。
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公开(公告)号：US20050206759A1
公开(公告)日：2005-09-22
申请号：US11076911
申请日：2005-03-11
IPC分类号： H01L27/148 , G06K7/00 , G06K9/20 , H01L27/146 , H01L27/30 , H04N3/14 , H04N9/04 , H04N9/07 , H04N5/335
CPC分类号： H01L27/307 , H01L27/14609 , H01L27/14647 , H01L27/14692 , H04N9/045
摘要： A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus value of blue (B) and a stimulus value of red (R), wherein the light reception elements comprise a first light reception element that generates a red (R) color signal corresponding to the stimulus values of red (R); and a first portion that adds a signal corresponding to the stimulus value of blue (B) as a positive sensitivity component to one of: the first light reception element; and a red (R) color signal generated by the first light reception element.
摘要翻译： 颜色传感器包括：光接收元件，其产生对应于RGB颜色系统中的颜色的刺激值的颜色信号，颜色的刺激值包括蓝色（B）的刺激值和红色（R）的刺激值，其中 光接收元件包括产生对应于红色（R）的刺激值的红色（R）颜色信号的第一光接收元件; 以及第一部分，其将与蓝色（B）的刺激值相对应的信号作为正灵敏度分量添加到第一光接收元件之一; 和由第一光接收元件产生的红（R）彩色信号。
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公开(公告)号：US20050206755A1
公开(公告)日：2005-09-22
申请号：US11080966
申请日：2005-03-16
IPC分类号： H01L27/146 , H04N5/335
CPC分类号： B82Y10/00 , H01L27/14647
摘要： A solid-state imaging device provided by stacking a photoelectric conversion element is provided with a semiconductor substrate having a signal readout circuit and a photoelectric conversion element stacked on the semiconductor substrate, an incident light is photoelectrically converted to a signal according to the light quantity by the photoelectric conversion element and read out by the signal readout circuit, and the photoelectric conversion element is composed of a first deposition layer comprising a p-conductive quantum dot and an i-conductive quantum dot, and a second deposition layer comprising an n-conductive quantum dot and an i-conductive quantum dot
摘要翻译： 通过堆叠光电转换元件而提供的固态成像器件设置有半导体衬底，该半导体衬底具有堆叠在半导体衬底上的信号读出电路和光电转换元件，入射光根据光量被光电转换成信号 所述光电转换元件由所述信号读出电路读出，所述光电转换元件由包含p导电量子点和i导电量子点的第一沉积层构成，所述第二沉积层包含n导电 量子点和i导电量子点
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公开(公告)号：US07586528B2
公开(公告)日：2009-09-08
申请号：US11076911
申请日：2005-03-11
CPC分类号： H01L27/307 , H01L27/14609 , H01L27/14647 , H01L27/14692 , H04N9/045
摘要： A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus value of blue (B) and a stimulus value of red (R), wherein the light reception elements comprise a first light reception element that generates a red (R) color signal corresponding to the stimulus values of red (R); and a first portion that adds a signal corresponding to the stimulus value of blue (B) as a positive sensitivity component to one of: the first light reception element; and a red (R) color signal generated by the first light reception element.
摘要翻译： 颜色传感器包括：光接收元件，其产生对应于RGB颜色系统中的颜色的刺激值的颜色信号，颜色的刺激值包括蓝色（B）的刺激值和红色（R）的刺激值，其中 光接收元件包括产生对应于红色（R）的刺激值的红色（R）颜色信号的第一光接收元件; 以及第一部分，其将与蓝色（B）的刺激值相对应的信号作为正灵敏度分量添加到第一光接收元件之一; 和由第一光接收元件产生的红（R）彩色信号。
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公开(公告)号：US20060023094A1
公开(公告)日：2006-02-02
申请号：US11189784
申请日：2005-07-27
IPC分类号： H04N9/04
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14647 , H01L27/14831
摘要： A light receiving device and an image pickup device in which a plurality of light receiving devices are arranged are provided. The light receiving device comprises a single semiconductor substrate and a light receiving device that has a first photoelectric conversion part and a second photoelectric conversion part. The single semiconductor substrate comprises regions of a first conductivity type and regions of a second conductivity type in an alternately multiply stacked manner. Depths of each of the junction surfaces between the regions of first conductivity type and second conductivity type are formed at depths such that light mainly in the blue or red wavelength regions can be photo-electrically converted. The respective detected wavelengths of the first photoelectric conversion part and second photoelectric conversion part are longer than the central wavelength of the blue wavelength region, and shorter than the central wavelength of the red wavelength region.
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公开(公告)号：US07582943B2
公开(公告)日：2009-09-01
申请号：US11142499
申请日：2005-06-02
IPC分类号： H01L31/00
CPC分类号： H01L27/14634 , H01L27/14647 , H01L31/03046
摘要： The invention provides a light receiving device having a single semiconductor substrate and a short-wavelength light receiving section. The single semiconductor substrate has regions of a first conductivity type and regions of a second (opposite) conductivity type alternately multiply laminated. Each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength bands converted by other junction surfaces, to electricity. The short-wavelength light receiving section is provided on or above the incident light surface of the semiconductor substrate and detects light having a wavelength shorter than the central wavelengths of all the respective wavelength bands converted by the junction surfaces. The invention further provides an image pickup device which uses an array of a plurality of the light receiving device.
摘要翻译： 本发明提供一种具有单个半导体衬底和短波长光接收部分的光接收装置。 单个半导体衬底具有第一导电类型的区域和交替地叠层的第二（相对）导电类型的区域。 第一导电类型的区域和第二导电类型的区域之间的每个接合表面被形成为具有能够转换波长带中的光的深度，该波长带不同于由其它接合表面转换的其它波长带中的光， 到电 短波长光接收部设置在半导体衬底的入射光表面上或上方，并且检测具有比由接合表面转换的所有相应波长带的中心波长短的波长的光。 本发明还提供了使用多个光接收装置的阵列的图像拾取装置。
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公开(公告)号：US20050270406A1
公开(公告)日：2005-12-08
申请号：US11142499
申请日：2005-06-02
IPC分类号： H01L27/146 , H01L31/0304 , H01L31/10 , H04N5/225
CPC分类号： H01L27/14634 , H01L27/14647 , H01L31/03046
摘要： The invention provides a light receiving device having a single semiconductor substrate and a short-wavelength light receiving section. The single semiconductor substrate has regions of a first conductivity type and regions of a second (opposite) conductivity type alternately multiply laminated. Each of junction surfaces between the regions of the first conductivity type and the regions of the second conductivity type is formed to have a depth which enables converting light in a wavelength band, which is different from light in other wavelength bands converted by other junction surfaces, to electricity. The short-wavelength light receiving section is provided on or above the incident light surface of the semiconductor substrate and detects light having a wavelength shorter than the central wavelengths of all the respective wavelength bands converted by the junction surfaces. The invention further provides an image pickup device which uses an array of a plurality of the light receiving device.
摘要翻译： 本发明提供一种具有单个半导体衬底和短波长光接收部分的光接收装置。 单个半导体衬底具有第一导电类型的区域和交替地叠层的第二（相对）导电类型的区域。 第一导电类型的区域和第二导电类型的区域之间的每个接合表面被形成为具有能够转换波长带中的光的深度，该波长带不同于由其它接合表面转换的其它波长带中的光， 到电 短波长光接收部设置在半导体衬底的入射光表面上或上方，并且检测具有比由接合表面转换的所有相应波长带的中心波长短的波长的光。 本发明还提供了使用多个光接收装置的阵列的图像拾取装置。
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公开(公告)号：US20060042677A1
公开(公告)日：2006-03-02
申请号：US11206851
申请日：2005-08-19
IPC分类号： H02N6/00
CPC分类号： H01L31/101 , H01L27/14623 , H01L27/14647 , H01L31/02164
摘要： The present invention provides a solid state image pickup device, including a silicon substrate and a photoelectric conversion unit which receives external incident light and generates signals in accordance therewith, and which is formed on or above the surface of the silicon substrate, wherein a signal transmission circuit for reading out the signals generated in the photoelectric conversion unit is formed on the silicon substrate; the photoelectric conversion unit includes a photoelectric conversion layer which has a laminated structure of plural compound semiconductor layers, which are different from each other in light wavelength to absorb and are provided with the laminated structure so that the shorter a light absorption wavelength of a compound semiconductor layer is, the closer to a light incident side the compound semiconductor layer resides; and the plural compound semiconductor layers are respectively connected to pixel electrodes formed on the signal transmission circuit.
摘要翻译： 本发明提供了一种固态摄像装置，其包括硅衬底和光电转换单元，其接收外部入射光并根据其产生信号，并形成在硅衬底的表面上或上方，其中信号传输 在硅衬底上形成用于读出在光电转换单元中产生的信号的电路; 光电转换单元包括具有多个化合物半导体层的叠层结构的光电转换层，它们在光波长上彼此不同以吸收并且具有层叠结构，使得化合物半导体的光吸收波长越短 层越靠近化合物半导体层所在的光入射侧; 并且多个化合物半导体层分别连接到形成在信号传输电路上的像素电极。
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9.发明申请PHOTOELECTRIC CONVERSION ELEMENT, THIN-FILM SOLAR CELL, AND PHOTOELECTRIC CONVERSION ELEMENT MANUFACTURING METHOD 审中-公开光电转换元件，薄膜太阳能电池和光电转换元件制造方法公开(公告)号：US20110186103A1
公开(公告)日：2011-08-04
申请号：US13017965
申请日：2011-01-31
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/0224
CPC分类号： H01L31/03928 , H01L31/02008 , H01L31/046 , Y02E10/541 , Y02P70/521
摘要： A photoelectric conversion element includes a substrate with an insulation layer having a metallic substrate and an electrical insulation layer formed on a surface of the metallic substrate, a diffusion prevention layer formed on the electrical insulation layer, an alkali supply layer being electrically conductive and formed on the diffusion prevention layer, a lower electrode formed on the alkali supply layer, a photoelectric conversion layer comprising a compound semiconductor layer and formed on the lower electrode, and an upper electrode formed on the photoelectric conversion layer. The diffusion prevention layer prevents at least diffusion of alkali metal from the alkali supply layer to the substrate with the insulation layer.
摘要翻译： 一种光电转换元件包括具有金属基板的绝缘层和形成在金属基板的表面上的电绝缘层的基板，形成在电绝缘层上的扩散防止层，碱性供应层导电并形成在 扩散防止层，形成在碱性供电层上的下电极，形成在下电极上的化合物半导体层的光电转换层和形成在光电转换层上的上电极。 扩散防止层至少防止碱金属从碱性供应层到具有绝缘层的基板的扩散。
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10.发明授权Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer 有权半导体激光器件在压应变量子阱层和拉伸应变阻挡层之间具有应变缓冲层公开(公告)号：US06973109B2
公开(公告)日：2005-12-06
申请号：US09794618
申请日：2001-02-28
申请人： Toshiaki Fukunaga , Mitsugu Wada
发明人： Toshiaki Fukunaga , Mitsugu Wada
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/2231 , H01S5/34 , H01S5/3406 , H01S5/3434 , H01S5/34373
摘要： A semiconductor laser device having an active region including alternating layers of at least one quantum well layer and a plurality of barrier layers, where two of the plurality of barrier layers are the outermost layers of the alternating layers. Each of the at least one quantum well layer has a compressive strain, and each of the plurality of barrier layers has a tensile strain. In the active region, a strain buffer layer having an intermediate strain is formed between each quantum well layer and each of two barrier layers adjacent to the quantum well layer. Interfacial strain is thus reduced, improving high-output-power characteristics.
摘要翻译： 一种半导体激光器件，其具有包括至少一个量子阱层和多个势垒层的交替层的有源区，其中多个阻挡层中的两个是交替层的最外层。 所述至少一个量子阱层中的每一个具有压缩应变，并且所述多个阻挡层中的每一个具有拉伸应变。 在有源区域中，在每个量子阱层与与量子阱层相邻的两个势垒层中的每一个之间形成具有中间应变的应变缓冲层。 因此，界面应变减小，提高了高输出功率特性。
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