公开(公告)号：US5624791A

公开(公告)日：1997-04-29

申请号：US463930

申请日：1995-06-05

申请人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

发明人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

IPC分类号： G03F1/00 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30 ,  G03C5/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F1/28

摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask patterns layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

摘要翻译： 掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。 掩模图案层的至少一部分仅由用于透射光的相移层构成，从而在通过相移层传输的光的相位与通过相移层传输的光的相位之间发生相移 没有相移层的掩模部分。

公开(公告)号：US5489509A

公开(公告)日：1996-02-06

申请号：US54608

申请日：1993-04-30

申请人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

发明人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

IPC分类号： G03F1/00 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F1/28

摘要： A mask includes a first layer which is transparent with respect to an exposure light, and a phase shift mask pattern which is formed on the transparent layer. The pattern includes one or more phase shift regions adapted for transmitting the exposure light impinging thereon and shifting the phase of the transmitted light relative to the phase of light which passes through a portion of the mask having no phase shift layer.

摘要翻译： 掩模包括相对于曝光光透明的第一层和形成在透明层上的相移掩模图案。 该图案包括一个或多个相移区域，其适于透射照射在其上的曝光光，并且相对于穿过没有相移层的掩模的一部分的光的相位移动透射光的相位。

公开(公告)号：US5786115A

公开(公告)日：1998-07-28

申请号：US792070

申请日：1997-02-03

申请人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

发明人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

IPC分类号： G03F1/00 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F1/28

摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

摘要翻译： 掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。 掩模图案层的至少一部分仅由用于透射光的相移层构成，使得在透过相移层的光的相位与透过相移层的光的相位之间发生相移 没有相移层的掩模部分。

公开(公告)号：US5674646A

公开(公告)日：1997-10-07

申请号：US463857

申请日：1995-06-05

申请人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

发明人： Toshiaki Kawabata ,  Kenji Nakagawa ,  Seiichiro Yamaguchi ,  Masao Taguchi ,  Kazuhiko Sumi ,  Yuichiro Yanagishita

IPC分类号： G03F1/00 ,  G03F1/34 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/34 ,  G03F1/28

摘要： A mask includes a transparent layer which is transparent with respect to a light which is used for an exposure, and a mask pattern layer which is formed on the transparent layer. At least a portion of the mask pattern layer is made up solely of a phase shift layer for transmitting the light, so that a phase shift occurs between a phase of the light transmitted through the phase shift layer and a phase of the light transmitted through a portion of the mask having no phase shift layer.

摘要翻译： 掩模包括相对于用于曝光的光是透明的透明层，以及形成在透明层上的掩模图案层。 掩模图案层的至少一部分仅由用于透射光的相移层构成，使得在透过相移层的光的相位与透过相移层的光的相位之间发生相移 没有相移层的掩模部分。

公开(公告)号：US5465220A

公开(公告)日：1995-11-07

申请号：US69853

申请日：1993-06-01

申请人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

发明人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

IPC分类号： G03F7/20 ,  G03F7/207 ,  G06F9/00

CPC分类号： G03F7/70566 ,  G03F7/201 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70283 ,  G03F7/70583

摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

公开(公告)号：US06045976A

公开(公告)日：2000-04-04

申请号：US734790

申请日：1996-10-25

申请人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

发明人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

IPC分类号： G03F7/20 ,  G03F7/207 ,  G03C5/00 ,  G03F9/00

CPC分类号： G03F7/70566 ,  G03F7/201 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70283 ,  G03F7/70583

摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

公开(公告)号：US5607821A

公开(公告)日：1997-03-04

申请号：US510128

申请日：1995-08-01

申请人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

发明人： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

IPC分类号： G03F7/20 ,  G03F7/207 ,  G03C5/04 ,  G03B27/32 ,  G03B27/68 ,  G03B27/72

CPC分类号： G03F7/70566 ,  G03F7/201 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70283 ,  G03F7/70583

摘要： An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

摘要翻译： 在制造半导体器件时，用于精密加工的光刻中的光学曝光方法。 光掩模上的图案被投影并暴露在具有包括变形照明系统，光掩模和投影透镜的曝光装置的基板上的寄存器上。 变形照明系统由光源，光阑和聚光透镜组成，隔膜设有直线通孔。 光学曝光方法使用用于照明的线性光线或与图案平行的用于照明的两束线性光。 两条线性光线相对于光轴对称。 当光掩模图案是线和空间图案时，这些光线与图案平行于与曝光装置的光轴分离的位置。

公开(公告)号：US08553459B2

公开(公告)日：2013-10-08

申请号：US13081094

申请日：2011-04-06

申请人： Naoharu Shinozaki ,  Masao Taguchi ,  Takahiro Hatada ,  Satoru Sugimoto ,  Satoshi Sakurakawa

发明人： Naoharu Shinozaki ,  Masao Taguchi ,  Takahiro Hatada ,  Satoru Sugimoto ,  Satoshi Sakurakawa

IPC分类号： G11C11/34

CPC分类号： G11C16/08 ,  G11C16/0483 ,  G11C16/22

摘要： A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.

摘要翻译： 非易失性半导体存储器件包括：第一串，包括串联连接的第一数量的存储单元，以非易失性方式存储信息; 并且包括串联连接的第二数量的存储单元的第二串，其以非易失性方式存储信息，其中第二数小于第一数量。

公开(公告)号：US20120051115A1

公开(公告)日：2012-03-01

申请号：US13289553

申请日：2011-11-04

申请人： Masao Taguchi

发明人： Masao Taguchi

IPC分类号： G11C11/00

CPC分类号： G11C11/5685 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0078 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/72 ,  G11C2213/78 ,  G11C2213/79

摘要： A resistance changing memory array architecture includes an array of resistance changing memory unit cell arranged in rows and column, wherein at least two adjacent columns share a sense bit line, and a control line individually associated with each column, wherein a current control component within each unit cell along a respective column is coupled to a respective control line. The architecture further includes a plurality of word lines each associated with a respective row, wherein a resistance changing element associated with each unit cell along a respective row is coupled to a respective word line.

摘要翻译： 电阻改变存储器阵列架构包括排列成行和列的电阻改变存储单元单元的阵列，其中至少两个相邻列共享一个感测位线，以及一个单独与每列相关联的控制线，其中每个中的电流控制部件 沿着相应列的单位单元耦合到相应的控制线。 该架构进一步包括多个与相应行相关联的字线，其中与相应行的每个单位单元相关联的电阻改变元件被耦合到相应的字线。

公开(公告)号：US20110261622A1

公开(公告)日：2011-10-27

申请号：US13081094

申请日：2011-04-06

申请人： Naoharu Shinozaki ,  Masao Taguchi ,  Takahiro Hatada ,  Satoru Sugimoto ,  Satoshi Sakurakawa

发明人： Naoharu Shinozaki ,  Masao Taguchi ,  Takahiro Hatada ,  Satoru Sugimoto ,  Satoshi Sakurakawa

IPC分类号： G11C16/08

CPC分类号： G11C16/08 ,  G11C16/0483 ,  G11C16/22

摘要： A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.

摘要翻译： 非易失性半导体存储器件包括：第一串，包括串联连接的第一数量的存储单元，以非易失性方式存储信息; 并且包括串联连接的第二数量的存储单元的第二串，其以非易失性方式存储信息，其中第二数小于第一数量。