摘要:
A steam turbine 3 includes: a turbine rotor 4; a rotor blade 5 implanted to the turbine rotor 4; a stator blade 6 provided at an upstream side of the rotor blade 5; and a turbine casing 13 supporting the stator blade 6 and including the turbine rotor 4, the rotor blade 5 and the stator blade 6, and have a constitution in which a stage 7 is formed by a pair of the rotor blade 5 and the stator blade 6, and a steam passage 8 is formed by arranging plural stages 7 in an axial direction of the turbine rotor 4. A surface treatment to suppress an increase of a surface roughness caused by oxidation is performed for at least a part of a surface of the stator blade 6 and a surface of the rotor blade 5.
摘要:
A welding inspection method has steps of: generating transmission laser light for generating an ultrasonic wave and transmitting the transmission laser light to an object to be inspected during or after welding operation for irradiation; generating reception laser light for detecting an ultrasonic wave and transmitting the reception laser light to the object to be inspected for irradiation; collecting laser light scattered and reflected at surface of the object to be inspected; performing interference measurement of the laser light and obtaining an ultrasonic signal; and analyzing the ultrasonic signal obtained by the interference measurement. At least one of the transmission laser light generated in the transmission laser light irradiation step and the reception laser light generated in the reception laser light irradiation step is irradiated onto a welded metal part or a groove side surface.
摘要:
Double exposure is performed by using a pair of photomasks, an attenuated phase shift mask or the like which is not an alternating phase shift mask, and a pattern is transferred onto a photoresist. Here, on the occasion of performing exposure with the photomask for forming a finer pattern, double pole illumination is used as an illumination system.
摘要:
The present invention comprises a turntable which holds a turbine part at a predetermined position, the turn table being rotatably supported by a support member, and rotated and driven by a driving motor, an abrasive feeding unit which feeds an abrasive particle having an elastic material as a core to a predetermined position as an abrasive, and a polishing head including an impeller which is rotated and driven by an impeller driving motor at high speed and applies rotary energy to the abrasive particle to be supplied from the abrasive feeding unit, the polishing head injecting the abrasive particle flying from the tangential direction of the impeller at a predetermined speed toward a surface to be polished of the turbine part held on the turntable, and an abrasive recovery unit which recovers the abrasive particle provided for polishing of the turbine part from the polishing head, and feeding into the abrasive feeding unit.
摘要:
The width values of transferred patterns of respective evaluation patterns transferred using a test photo mask (11) are calculated by first calculation unit (12) based on the relationship with the opening ratio of flare generation patterns. The distribution of the calculated width values of the respective transferred patterns is linearly approximated by second calculation unit (13) and the inclination thereof is calculated. On the basis of a table defining the inclination of the width values of the respective transferred patterns (the ratio of dimension fluctuation), the amount of correction is changed for each pattern by correction unit (14). Consequently, the amount of dimension fluctuation caused by local flares can be accurately calculated. This enables accurately performing pattern-dimension corrections against local flares.
摘要:
The simulation equipment has division unit for dividing a layout of a photo mask (mask layout) into a plurality of areas, average light intensity value calculation unit for calculating an average value of light intensity in each of the areas, smoothing unit for subjecting the calculated average value to smoothing processing, and multiplication unit for multiplying the smoothed average value by a predetermined multiplier.
摘要:
A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.
摘要:
An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.
摘要:
An optical mask including a 2.pi.n phase shifter pattern, a .pi.(2n+1) phase shifter pattern, an intermediate phase shifter pattern which shifts the phase of an incident light by an angle between 2.pi.n and .pi.(2n+1), and a reversed intermediate phase shifter pattern which shifts the phase of an incident light by an angle being reversed by .pi. for the phase shift angle of the intermediate phase shifter pattern. The intermediate phase shifter patterns are formed in the vicinity of the reversed intermediate phase shifter patterns having light shielding films in between.
摘要:
A phase shift optical mask is used for exposing a pattern using an exposure light. The phase shift optical mask includes a substrate which is transparent with respect to the exposure light, a light blocking layer which is non-transparent with respect to the exposure light and is provided on the substrate, where the light blocking layer has an opening having a predetermined shape and size and being defined by a side wall of the light blocking layer, and a phase shift layer which is transparent with respect to the exposure light and is provided on the light blocking layer and the substrate which is exposed within the opening. The phase shift layer has a uniform thickness, and the light blocking layer has a predetermined thickness so that a phase of the exposure light transmitted through the phase shift layer provided on the side wall of the light blocking layer is shifted by approximately 180.degree. relative to a phase of the exposure light transmitted through the phase shift layer provided on the substrate.