公开(公告)号：US20120208331A1

公开(公告)日：2012-08-16

申请号：US13454349

申请日：2012-04-24

Applicant: Toshihide KIKKAWA

Inventor： Toshihide KIKKAWA

IPC: H01L21/335

CPC classification number: H01L29/7783 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788

Abstract: A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain electrode formed on a bottom surface of the conductive semiconductor substrate, a current blocking layer formed on a top surface of the conductive semiconductor substrate, made of high resistance compound semiconductor or insulator, and having openings, an active layer of compound semiconductor burying the openings and extending on an upper surface of the current blocking layer, a gate electrode formed above the openings and above the active layer, and a source electrode formed laterally spaced from the gate electrode and formed above the active layer.

Abstract translation: 提供了具有优异的夹断特性的垂直型GaN系列场效应晶体管。 化合物半导体器件包括导电半导体衬底，形成在导电半导体衬底的底表面上的漏电极，形成在导电半导体衬底的顶表面上的电流阻挡层，由高电阻化合物半导体或绝缘体制成，并具有 开口，埋入开口并在电流阻挡层的上表面上延伸的化合物半导体的有源层，形成在开口上方和活性层上方的栅电极，以及与栅电极横向间隔开并形成在其上的源电极 活动层。

公开(公告)号：US20120138944A1

公开(公告)日：2012-06-07

申请号：US13294654

申请日：2011-11-11

Applicant: Masahito KANAMURA ,  Toshihide KIKKAWA ,  Kenji IMANISHI

Inventor： Masahito KANAMURA ,  Toshihide KIKKAWA ,  Kenji IMANISHI

IPC: H01L29/778 ,  H01L21/335

CPC classification number: H01L29/7787 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/47 ,  H01L29/513 ,  H01L29/66462

Abstract: A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.

Abstract translation: 化合物半导体器件包括：化合物半导体层; 形成在所述化合物半导体层上的第一膜，所述第一膜在与所述化合物半导体层的界面处于带负电状态或非带电状态; 形成在所述第一膜上的第二膜，所述第二膜在与所述第一膜的界面处于带电状态; 以及嵌入到形成在第二膜中的开口中的栅电极。

公开(公告)号：US20110275199A1

公开(公告)日：2011-11-10

申请号：US13185946

申请日：2011-07-19

Applicant: Toshihide KIKKAWA

Inventor： Toshihide KIKKAWA

IPC: H01L21/20

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787

Abstract: An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.

公开(公告)号：US20110272704A1

公开(公告)日：2011-11-10

申请号：US13185888

申请日：2011-07-19

Applicant: Toshihide KIKKAWA

Inventor： Toshihide KIKKAWA

IPC: H01L29/20

CPC classification number: H01L29/778 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7787

Abstract: An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.

Abstract translation: AlN层（2），GaN缓冲层（3），非掺杂AlGaN层（4a），n型AlGaN层（4b），n型GaN层（5），非掺杂AlN 层（6）和SiN层（7）依次形成在SiC衬底（1）上。 在非掺杂AlN层（6）和SiN层（7）中形成至少三个开口，并且源电极（8a），漏电极（8b）和栅电极（19）在这些开口中蒸发 。

公开(公告)号：US20100207167A1

公开(公告)日：2010-08-19

申请号：US12772624

申请日：2010-05-03

Applicant: Kenji IMANISHI ,  Toshihide KIKKAWA ,  Takeshi TANAKA ,  Yoshihiko MORIYA ,  Yohei OTOKI

Inventor： Kenji IMANISHI ,  Toshihide KIKKAWA ,  Takeshi TANAKA ,  Yoshihiko MORIYA ,  Yohei OTOKI

IPC: H01L29/205 ,  H01L21/20

CPC classification number: H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

Abstract: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

Abstract translation: 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度 是积极的。

公开(公告)号：US20100207124A1

公开(公告)日：2010-08-19

申请号：US12772661

申请日：2010-05-03

Applicant: Kenji IMANISHI ,  Toshihide KIKKAWA ,  Takeshi TANAKA ,  Yoshihiko MORIYA ,  Yohei OTOKI

Inventor： Kenji IMANISHI ,  Toshihide KIKKAWA ,  Takeshi TANAKA ,  Yoshihiko MORIYA ,  Yohei OTOKI

IPC: H01L29/205 ,  H01L21/335 ,  H01L29/778

CPC classification number: H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

Abstract: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

公开(公告)号：US20080237606A1

公开(公告)日：2008-10-02

申请号：US12059708

申请日：2008-03-31

Applicant: Toshihide KIKKAWA ,  Kenji IMANISHI

Inventor： Toshihide KIKKAWA ,  Kenji IMANISHI

IPC: H01L29/778

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/66462

Abstract: A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first layer, a third layer formed over the second layer and comprising GaN whose energy bandgap is smaller than the second layer, and a channel region layer formed on the third layer.

Abstract translation: 具有晶体管结构的化合物半导体器件包括衬底，形成在衬底上并包含GaN的第一层，形成在第一层上并包含晶格常数大于第一层的InN的第二层，形成在第三层上的第三层 第二层并且包括其能带隙小于第二层的GaN，以及形成在第三层上的沟道区层。

公开(公告)号：US20120138948A1

公开(公告)日：2012-06-07

申请号：US13294726

申请日：2011-11-11

Applicant: Toyoo MIYAJIMA ,  Toshihide KIKKAWA ,  Kenji IMANISHI ,  Toshihiro OHKI ,  Masahito KANAMURA

Inventor： Toyoo MIYAJIMA ,  Toshihide KIKKAWA ,  Kenji IMANISHI ,  Toshihiro OHKI ,  Masahito KANAMURA

IPC: H01L29/778 ,  H01L21/20

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7787

Abstract: A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.

Abstract translation: 化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第​​二化合物半导体层增加 并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第​​二化合物半导体层增加。

公开(公告)号：US20080197359A1

公开(公告)日：2008-08-21

申请号：US12034273

申请日：2008-02-20

Applicant: Kenji IMANISHI ,  Toshihide KIKKAWA

Inventor： Kenji IMANISHI ,  Toshihide KIKKAWA

IPC: H01L29/267 ,  H01L21/338

CPC classification number: H01L29/66431 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/107 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/2203 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/812

Abstract: A compound semiconductor device has a buffer layer formed on a conductive SiC substrate, an AlxGa1-xN layer formed on the buffer layer in which an impurity for reducing carrier concentration from an unintentionally doped donor impurity is added and in which the Al composition x is 0

Abstract translation: 化合物半导体器件具有形成在导电性SiC衬底上的缓冲层，形成在缓冲层上的Al x Ga 1-x N层，其中添加用于降低来自无意掺杂的施主杂质的载流子浓度的杂质，其中Al组分x为0

公开(公告)号：US20090065787A1

公开(公告)日：2009-03-12

申请号：US12248357

申请日：2008-10-09

Applicant: Toshihide KIKKAWA ,  Kenji IMANISHI

Inventor： Toshihide KIKKAWA ,  Kenji IMANISHI

IPC: H01L29/205 ,  H01L29/778 ,  H01L21/336

CPC classification number: H01L29/7787 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462

Abstract: A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.

Abstract translation: 一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。 步骤（a）优选选择导电类型为n型，电导率为0.08Ωg至1×1050Ωg的主颜色为绿色的导电性SiC衬底，或其主要颜色为黑色，导电类型为p型，其导电类型为 电阻率为1×10 3Ω·mol〜1×10 5Ω·cm，或其主要颜色为蓝色，其导电类型为p型，电阻率为10Ω·cm〜1×10-5Ω·cm。 步骤（b）优选包括（b-1）在导电SiC衬底上通过氢化物VPE生长具有不薄于10μm的厚度的AlInGaN层。