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    COMPOUND SEMICONDUCTOR STRUCTURE
    1.
    发明申请
    COMPOUND SEMICONDUCTOR STRUCTURE 有权
    化合物半导体结构

    公开(公告)号：US20090065787A1

    公开(公告)日：2009-03-12

    申请号：US12248357

    申请日：2008-10-09

    申请人： Toshihide KIKKAWA ,  Kenji IMANISHI

    发明人： Toshihide KIKKAWA ,  Kenji IMANISHI

    IPC分类号： H01L29/205 ,  H01L29/778 ,  H01L21/336

    CPC分类号： H01L29/7787 ,  H01L21/02378 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462

    摘要： A method for manufacturing a compound semiconductor structure, includes (a) selecting a conductive SiC substrate in accordance with color and resistivity and (b) epitaxially growing a GaN series compound semiconductor layer on the selected conductive SiC substrate. The step (a) preferably selects a conductive SiC substrate whose main color is green, whose conductivity type is n-type and whose resistivity is 0.08 Ωcm to 1×105 Ωcm, or whose main color is black, whose conductivity type is p-type and whose resistivity is 1×103 Ωcm to 1×105 Ωcm, or whose main color is blue, whose conductivity type is p-type and whose resistivity is 10 Ωcm to 1×105 Ωcm. The step (b) preferably includes (b-1) growing an AlInGaN layer having a thickness not thinner than 10 μm on the conductive SiC substrate by hydride VPE.

    摘要翻译： 一种化合物半导体结构的制造方法，包括：（a）根据颜色和电阻率选择导电性SiC基板，（b）在选择的导电性SiC基板上外延生长GaN系化合物半导体层。 步骤（a）优选选择导电类型为n型，电导率为0.08Ωg至1×1050Ωg的主颜色为绿色的导电性SiC衬底，或其主要颜色为黑色，导电类型为p型，其导电类型为 电阻率为1×10 3Ω·mol〜1×10 5Ω·cm，或其主要颜色为蓝色，其导电类型为p型，电阻率为10Ω·cm〜1×10-5Ω·cm。 步骤（b）优选包括（b-1）在导电SiC衬底上通过氢化物VPE生长具有不薄于10μm的厚度的AlInGaN层。

    COMPOUND SEMICONDUCTOR DEVICE
    5.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE 有权
    化合物半导体器件

    公开(公告)号：US20080237606A1

    公开(公告)日：2008-10-02

    申请号：US12059708

    申请日：2008-03-31

    申请人： Toshihide KIKKAWA ,  Kenji IMANISHI

    发明人： Toshihide KIKKAWA ,  Kenji IMANISHI

    IPC分类号： H01L29/778

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462

    摘要： A compound semiconductor device having a transistor structure, includes a substrate, a first layer formed on the substrate and comprising GaN, a second layer formed over the first layer and containing InN whose lattice constant is larger than the first layer, a third layer formed over the second layer and comprising GaN whose energy bandgap is smaller than the second layer, and a channel region layer formed on the third layer.

    摘要翻译： 具有晶体管结构的化合物半导体器件包括衬底，形成在衬底上并包含GaN的第一层，形成在第一层上并包含晶格常数大于第一层的InN的第二层，形成在第三层上的第三层 第二层并且包括其能带隙小于第二层的GaN，以及形成在第三层上的沟道区层。

    COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US20120138944A1

    公开(公告)日：2012-06-07

    申请号：US13294654

    申请日：2011-11-11

    申请人： Masahito KANAMURA ,  Toshihide KIKKAWA ,  Kenji IMANISHI

    发明人： Masahito KANAMURA ,  Toshihide KIKKAWA ,  Kenji IMANISHI

    IPC分类号： H01L29/778 ,  H01L21/335

    CPC分类号： H01L29/7787 ,  H01L29/41766 ,  H01L29/42376 ,  H01L29/47 ,  H01L29/513 ,  H01L29/66462

    摘要： A compound semiconductor device includes: a compound semiconductor layer; a first film formed over the compound semiconductor layer, the first film being in a negatively charged state or a non-charged state at an interface with the compound semiconductor layer; a second film formed over the first film, the second film being in a positively charged state at an interface with the first film; and a gate electrode to be embedded in an opening formed in the second film.

    摘要翻译： 化合物半导体器件包括：化合物半导体层; 形成在所述化合物半导体层上的第一膜，所述第一膜在与所述化合物半导体层的界面处于带负电状态或非带电状态; 形成在所述第一膜上的第二膜，所述第二膜在与所述第一膜的界面处于带电状态; 以及嵌入到形成在第二膜中的开口中的栅电极。

    COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US20120138948A1

    公开(公告)日：2012-06-07

    申请号：US13294726

    申请日：2011-11-11

    申请人： Toyoo MIYAJIMA ,  Toshihide KIKKAWA ,  Kenji IMANISHI ,  Toshihiro OHKI ,  Masahito KANAMURA

    发明人： Toyoo MIYAJIMA ,  Toshihide KIKKAWA ,  Kenji IMANISHI ,  Toshihiro OHKI ,  Masahito KANAMURA

    IPC分类号： H01L29/778 ,  H01L21/20

    CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7787

    摘要： A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.

    摘要翻译： 化合物半导体器件包括：形成在衬底上的电子传输层; 形成在电子传输层上的电子供应层; 以及形成在所述电子供给层上的盖层; 盖层包括含有GaN的第一化合物半导体层; 含有AlN的第二化合物半导体层，其形成在所述第一化合物半导体层上; 含有GaN的第三化合物半导体层，其形成在所述第二化合物半导体层上; 以及第一AlGaN含有层和第二含AlGaN的层中的至少一个，其中形成在第一化合物半导体层和第二化合物半导体层之间的第一AlGaN含有层，并且Al含量朝向第​​二化合物半导体层增加 并且形成在第二化合物半导体层和第三化合物半导体层之间的第二AlGaN含量层和Al含量朝向第​​二化合物半导体层增加。

    COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US20120315743A1

    公开(公告)日：2012-12-13

    申请号：US13591401

    申请日：2012-08-22

    申请人： Toshihide KIKKAWA ,  Kenji IMANISHI

    发明人： Toshihide KIKKAWA ,  Kenji IMANISHI

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

    摘要： A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer.

    摘要翻译： 化合物半导体器件设置有衬底，在衬底上形成的AlN层，在AlN层上形成的AlGaN层和比AlN层更大的电子亲和力，在AlGaN层上形成另一AlGaN层，并且电子亲和力小于 AlGaN层。 此外，提供了形成在后面的AlGaN层上的i-GaN层，以及在i-GaN层上形成的i-AlGaN层和n-AlGaN层。