摘要:
In piezoelectric thin films constituting crystalline dielectric thin film elements used for a piezoelectric actuator of a liquid discharge head, stress is generated in the crystallization step by heating due to the lattice misfit. Given this fact, by interposing between a substrate and intermediate layer which has a twin structure that absorbs the stress, film peeling and deterioration of the piezoelectric properties of the piezoelectric thin films are prevented. The intermediate layer is of a multi-layer structure which has a first intermediate layer comprising a twin structure thin film and a second intermediate layer which is the lower electrode, and because the substrate also serves as a lower electrode, the intermediate layer has a single layer structure comprising a twin structure thin film.
摘要:
A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.
摘要:
A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.
摘要:
A method of manufacturing an actuator comprises the steps of bonding a piezoelectric film formed on a single crystal substrate to a diaphragm structure member and removing the single crystal substrate therefrom to manufacture the actuator. The single crystal substrate is a substrate having bonded portions where a plurality of single crystal substrates are bonded together.
摘要:
A piezoelectric element comprises a piezoelectric body including a film made of an ABO3 perovskite oxide crystal epitaxially grown above a substrate, and a pair of electrode layers provided to the piezoelectric body, wherein the piezoelectric body has a porous region on a side opposite to a side of the substrate.
摘要:
A ferroelectric thin film element comprises a substrate and an epitaxial ferroelectric thin film provided on the substrate. The thin film satisfies z/z0>1.003 and 0.997≦x/x0≦1.003, where a crystal face of said thin film parallel to a crystal face of a surface of the substrate is taken as a Z crystal face, a face spacing of the Z crystal face is taken as z, a face spacing of the Z crystal face of a material constituting the thin film in a bulk state is taken as z0, a crystal face of the thin film perpendicular to the Z crystal face is taken as an X crystal face, a face spacing of the X crystal face is taken as x and a face spacing of the X crystal face of the material constituting the thin film in a bulk state is taken as x0.
摘要翻译:铁电薄膜元件包括设置在基板上的基板和外延铁电薄膜。 薄膜满足z / z 0 SUB >> 1.003和0.997 <= X / X 0 <= 1.003,其中所述薄膜的晶面平行于晶体面 将基板的表面作为Z晶面,将Z晶面的面间隔作为z,将构成薄膜的材料的Z晶面的面间距设为z状, SUB> 0 SUB>,将与Z晶面垂直的薄膜的晶面视为X晶面,将X晶面的面间距设为x,X晶面的面间距 构成薄膜的大块状态的材料为x <0>。
摘要:
A dielectric element in which a substrate, a lower electrode layer, a dielectric layer and an upper electrode layer are provided in this order, wherein the dielectric layer has a first dielectric layer of which major component is an oxide and provided on a side of said lower electrode layer, and a second dielectric layer of which major component is an oxide and provided on a side of said upper electrode layer, and the second dielectric layer is thicker than the first dielectric layer, and a formula (1) described below is satisfied when a dielectric constant of the first dielectric layer at 25° C. is ε1 and a dielectric constant of the second dielectric layer at 25° C. is ε2. ε1/ε2≧0.9 (1)
摘要:
A piezoelectric element including an upper electrode, a piezoelectric and/or electrostrictive material and a lower electrode, characterized in that the piezoelectric and/or electrostrictive material is a composite oxide constituted by ABO3 as general formula and the piezoelectric and/or electrostrictive material has a twin crystal.
摘要:
A perovskite type oxide of a single crystal structure or a uniaxial-oriented crystal structure is represented by ABO3. Site A includes Pb as a main component and site B includes a plurality of elements. The perovskite type oxide includes a plurality of crystal phases selected from the group consisting of tetragonal, rhombohedral, orthorhombic, cubic, pseudo-cubic and monoclinic systems and the plurality of crystal phases are oriented in the direction of .
摘要:
The piezoelectric actuator includes a piezoelectric film between two electrode layers and a diaphragm. Assuming that: each elastic coefficient of all materials is isotropic and a distortion amount of the piezoelectric film by an electric field is isotropic in all in-plane directions; a point located on a diaphragm surface and having a maximum displacement when a predetermined electric field is applied to distort the piezoelectric film, is expressed by PδMAX; and a point located on a circumference of a reference-circle having PδMAX as a center and having a minimum difference in displacement from PδMAX is expressed by PδA, the diaphragm has a shape capable of determining an axis A1 set in a straight-line joining PδMAX and PδA, the diaphragm comprises a single-crystalline-material in which a plane orthogonal to A1 and perpendicular to an axis A2 on the diaphragm surface, is a {110}-plane, and the piezoelectric film is a {100}-single-orientation film.