公开(公告)号：US07367487B2

公开(公告)日：2008-05-06

申请号：US10568991

申请日：2004-08-04

申请人： Toshihiro Murakawa ,  Taisei Wakisaka ,  Satoshi Ohkubo

发明人： Toshihiro Murakawa ,  Taisei Wakisaka ,  Satoshi Ohkubo

IPC分类号： B23K20/12 ,  B29C65/06

CPC分类号： B23K20/126 ,  B23K20/1265

摘要： A recess portion with a substantially circular cross-section is provided in the upper end surface of a supporting jig. When a probe of a device for friction stir welding is buried in the upper end surface of a layered portion, material in the vicinity of the buried portion flows plastically. This causes the plastically flowed material to flow into the recess portion, and as a result, the material is stirred in a relatively large region. When the material that flowed into the recess portion is cooled and solidified, a friction stir-welded portion-possessing member having a projection portion is obtained.

摘要翻译： 具有大致圆形横截面的凹部设置在支撑夹具的上端面上。 当用于摩擦搅拌焊接的装置的探针被埋在层状部分的上端表面中时，埋藏部分附近的材料流动塑性。 这使得塑性流动的材料流入凹部，结果，材料在较大的区域中被搅拌。 当流入凹部的材料被冷却并固化时，获得具有突出部的具有摩擦搅拌焊接部的部件。

公开(公告)号：US20060231594A1

公开(公告)日：2006-10-19

申请号：US10568991

申请日：2004-08-04

申请人： Toshihiro Murakawa ,  Taisei Wakisaka ,  Satoshi Ohkubo

发明人： Toshihiro Murakawa ,  Taisei Wakisaka ,  Satoshi Ohkubo

IPC分类号： B23K20/12

CPC分类号： B23K20/126 ,  B23K20/1265

摘要： A recess portion with a substantially circular cross-section is provided in the upper end surface of a supporting jig. When a probe of a device for friction stir welding is buried in the upper end surface of a layered portion, material in the vicinity of the buried portion flows plastically. This causes the plastically flowed material to flow into the recess portion, and as a result, the material is stirred in a relatively large region. When the material that flowed into the recess portion is cooled and solidified, a friction stir-welded portion-possessing member having a projection portion is obtained.

摘要翻译： 具有大致圆形横截面的凹部设置在支撑夹具的上端面上。 当用于摩擦搅拌焊接的装置的探针被埋在层状部分的上端表面中时，埋藏部分附近的材料流动塑性。 这使得塑性流动的材料流入凹部，结果，材料在较大的区域中被搅拌。 当流入凹部的材料被冷却并固化时，获得具有突出部的具有摩擦搅拌焊接部的部件。

公开(公告)号：US08610026B2

公开(公告)日：2013-12-17

申请号：US13145317

申请日：2009-12-02

申请人： Haruhiko Kobayashi ,  Satoshi Ohkubo ,  Shinichi Miyasaka ,  Koji Oda ,  Naoki Takahashi ,  Hideari Kamachi

发明人： Haruhiko Kobayashi ,  Satoshi Ohkubo ,  Shinichi Miyasaka ,  Koji Oda ,  Naoki Takahashi ,  Hideari Kamachi

IPC分类号： B23K26/20 ,  B23K26/32

CPC分类号： B23K26/244 ,  B23K2101/34 ,  B23K2103/08

摘要： The method of lap-welding of metal plates using a laser beam, wherein at least one of the metal plates is surface-treated, includes putting a metal plate on the other metal plate and forming a gap between the metal plates so that gas generated at the treated surface at the time weld can be dissipated therethrough. A surface-treated first work and a surface-treated second work are placed one on the other and clamped by a clamp with an opening of the clamp centered at the location on the first work to be welded. Then a laser beam is directed to the location to form a weld. The beam is then directed near the inner periphery of the opening to form a heated portion so that the heated portion deflects to form a gap through which the gas generated at the treated surface dissipates thereby reducing gas pressure.

摘要翻译： 使用激光束对金属板进行搭接焊接的方法，其中至少一个金属板进行表面处理，包括将金属板放置在另一金属板上并在金属板之间形成间隙，使得在 在时间焊接处理的表面可以从其中消散。 经表面处理的第一工件和经表面处理的第二工件一个放置在另一个上并由夹具夹紧，夹具的开口以第一待焊接工件的位置为中心。 然后将激光束导向该位置以形成焊缝。 然后将梁引导到开口的内周边附近以形成加热部分，使得加热部分偏转以形成间隙，在处理的表面处产生的气体通过该间隙消散，由此降低气体压力。

公开(公告)号：US5834362A

公开(公告)日：1998-11-10

申请号：US619249

申请日：1996-03-21

申请人： Shinji Miyagaki ,  Takashi Eshita ,  Satoshi Ohkubo ,  Kazuaki Takai

发明人： Shinji Miyagaki ,  Takashi Eshita ,  Satoshi Ohkubo ,  Kazuaki Takai

IPC分类号： H01L21/20 ,  H01L21/335 ,  H01L21/338 ,  H01L21/331 ,  H01L21/36

CPC分类号： H01L21/02461 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02494 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/66462

摘要： A method for fabricating a compound semiconductor device includes the steps of depositing a first group III-V compound semiconductor layer on a surface of a Si substrate while holding a temperature of the Si substrate at a first temperature, depositing a second group III-V compound semiconductor layer on the first group III-V compound semiconductor layer while holding the temperature of the substrate at a second, higher temperature, and depositing a third group III-V compound semiconductor layer on the second group III-V compound semiconductor layer while holding the temperature of the substrate at a third temperature higher than said second temperature, wherein the second group III-V compound semiconductor layer contains Al.

摘要翻译： 一种制造化合物半导体器件的方法包括以下步骤：在Si衬底的表面上沉积第一III-V族化合物半导体层，同时将Si衬底的温度保持在第一温度，沉积第二组III-V族化合物 半导体层，同时保持基板的温度处于第二较高温度，并且在第二组III-V族化合物半导体层上沉积第三组III-V族化合物半导体层，同时保持第 在比所述第二温度高的第三温度下的衬底的温度，其中第二组III-V族化合物半导体层含有Al。

公开(公告)号：US5492860A

公开(公告)日：1996-02-20

申请号：US47202

申请日：1993-04-16

申请人： Satoshi Ohkubo ,  Shinji Miyagaki

发明人： Satoshi Ohkubo ,  Shinji Miyagaki

IPC分类号： H01L21/20 ,  H01L21/203

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  Y10S148/017 ,  Y10S438/933

摘要： A method of growing a layer of a III-V compound semiconductor on a silicon substrate comprises an oxide layer removing step of removing an oxide layer on a surface of the silicon substrate at a first temperature, a low-temperature grown layer forming step of forming a low-temperature grown layer of the III-V compound semiconductor on the silicon substrate while introducing a source gas for Group III and a source gas for Group V at a second temperature lower than the first temperature, and a single crystal layer growing step of growing a single crystal layer of the Group III-V compound semiconductor on the low-temperature grown layer while introducing the source gas for Group III and the source gas for Group V at a third temperature higher than the second temperature and lower than the first temperature. The introduction of the source gas for Group V being started between the oxide layer removing step and the low-temperature grown layer forming step and at a predetermined temperature lower than the first temperature and higher than the third temperature, at which the first temperature arrives while being lowered to the second temperature. The surface of a silicone substrate is prevented from contamination before the formation of the low-temperature grown layer. A III-V compound semiconductor layer which is superior in crystal perfection and surface morphology can be formed.

摘要翻译： 在硅衬底上生长III-V族化合物半导体层的方法包括在第一温度下去除硅衬底表面上的氧化物层的氧化物层去除步骤，形成第一温度的低温生长层形成步骤 在第二温度低于第一温度的同时，在硅衬底上引入III-V族化合物半导体的低温生长层，同时引入第III族源气体和V族源气体;以及单晶层生长步骤 在低温生长层上生长第III-V族化合物半导体的单晶层，同时在比第二温度高且低于第一温度的第三温度下引入用于组III的源气体和V族源气体 。 在氧化物层去除步骤和低温生长层形成步骤之间并且在比第一温度低的第一温度和高于第一温度到达的第三温度的预定温度下开始引入用于V组的源气体， 降至第二温度。 在形成低温生长层之前，防止硅树脂基材的表面被污染。 可以形成晶体完整性和表面形态优异的III-V族化合物半导体层。

公开(公告)号：US20110278266A1

公开(公告)日：2011-11-17

申请号：US13145317

申请日：2009-12-02

申请人： Haruhiko Kobayashi ,  Satoshi Ohkubo ,  Shinichi Miyasaka ,  Koji Oda ,  Naoki Takahashi ,  Hideari Kamachi

发明人： Haruhiko Kobayashi ,  Satoshi Ohkubo ,  Shinichi Miyasaka ,  Koji Oda ,  Naoki Takahashi ,  Hideari Kamachi

IPC分类号： B23K26/00

CPC分类号： B23K26/244 ,  B23K2101/34 ,  B23K2103/08

摘要： The method of lap-welding of metal plates using a laser beam, wherein at least one of the metal plates is surface-treated, includes putting a metal plate on the other metal plate and forming a gap between the metal plates so that gas generated at the treated surface at the time weld can be dissipated therethrough. A surface-treated first work and a surface-treated second work are placed one on the other and clamped by means of a clamp with an opening of the clamp centered at the location on the first work to be welded. Then a laser beam is directed to the location to form a weld. The beam is then directed near the inner periphery of the opening to form a heated portion so that the heated portion deflects to form a gap through which the gas generated at the treated surface dissipates thereby reducing gas pressure.

摘要翻译： 使用激光束对金属板进行搭接焊接的方法，其中至少一个金属板进行表面处理，包括将金属板放置在另一金属板上并在金属板之间形成间隙，使得在 在时间焊接处理的表面可以从其中消散。 表面处理的第一工件和经表面处理的第二工件一个放置在另一个上并且通过夹具夹紧，夹具的开口以第一待焊接工件的位置为中心。 然后将激光束导向该位置以形成焊缝。 然后将梁引导到开口的内周边附近以形成加热部分，使得加热部分偏转以形成间隙，在处理的表面处产生的气体通过该间隙消散，由此降低气体压力。

公开(公告)号：US06984267B2

公开(公告)日：2006-01-10

申请号：US10235824

申请日：2002-09-06

申请人： Kiyoshi Irino ,  Ken-ichi Hikazutani ,  Tatsuya Kawamura ,  Taro Sugizaki ,  Satoshi Ohkubo ,  Toshiro Nakanishi ,  Kanetake Takasaki

发明人： Kiyoshi Irino ,  Ken-ichi Hikazutani ,  Tatsuya Kawamura ,  Taro Sugizaki ,  Satoshi Ohkubo ,  Toshiro Nakanishi ,  Kanetake Takasaki

IPC分类号： C23C16/00 ,  F27D3/12

CPC分类号： H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662

摘要： A manufacture method for a semiconductor device includes the steps of: (a) transporting a silicon wafer into a reaction chamber having first and second gas introducing inlet ports; (b) introducing an oxidizing atmosphere via the first gas introducing inlet port and raising the temperature of the silicon wafer to an oxidation temperature; (c) introducing a wet oxidizing atmosphere to form a thermal oxide film on the surface of the silicon wafer; (d) purging gas in the reaction chamber by using inert gas to lower a residual water concentration to about 1000 ppm or lower; and (e) introducing an NO or N2O containing atmosphere into the reaction chamber via the second gas introducing inlet port while the silicon wafer is maintained above 700° C. and above the oxidation temperature, to introduce nitrogen into the thermal oxide film and form an oxynitride film. A thin oxynitride film can be manufactured with good mass productivity.

摘要翻译： 半导体器件的制造方法包括以下步骤：（a）将硅晶片输送到具有第一和第二气体引入入口的反应室中; （b）经由第一气体导入口引入氧化气氛，将硅晶片的温度升高至氧化温度; （c）引入湿氧化气氛以在硅晶片的表面上形成热氧化膜; （d）通过使用惰性气体将残留水浓度降低至约1000ppm或更低，在反应室中吹扫气体; 和（e）通过第二气体引入入口将含有NO或N 2 O 2的气氛引入反应室，同时将硅晶片保持在700℃以上并高于氧化温度，以引入 氮气进入热氧化膜并形成氧氮化物膜。 可以以良好的质量生产率制造薄氧氮化物膜。

公开(公告)号：US20100168876A1

公开(公告)日：2010-07-01

申请号：US12646998

申请日：2009-12-24

申请人： Toshihiko NAKANO ,  Satoshi Ohkubo ,  Ryota Mibe

发明人： Toshihiko NAKANO ,  Satoshi Ohkubo ,  Ryota Mibe

IPC分类号： G05B13/02

CPC分类号： G05B17/02 ,  G06F11/3013 ,  G06F11/3089

摘要： An information control system capable of precisely defining and executing a condition for stipulating a state of an apparatus to be controlled. A storage unit stores an object definition table storing data items of a structure and a state of an object constituting a controlled system, and an actor definition table storing a monitor condition of an object state, an object monitor item and a setting value, as an actor as a control element for monitoring and controlling the object. A processing unit receives an object state from the controlled system, and when the state changes, transmits changed state value to the actor. The actor then refers to the actor definition table to judge whether the monitor condition is satisfied, and if satisfied, changes the setting value of the monitor condition and transmits a control command for setting value change to the object corresponding to the monitor item.

摘要翻译： 一种信息控制系统，其能够精确地定义和执行用于规定被控制装置的状态的条件。 存储单元存储存储构成受控系统的对象的结构和状态的数据项的对象定义表，以及存储对象状态，对象监视项和设定值的监视条件的动作者定义表，作为 演员作为监控和控制对象的控制元素。 处理单元从受控系统接收对象状态，并且当状态改变时，向演员发送改变的状态值。 然后，演员参考演员定义表来判断监视条件是否满足，如果满足，则改变监视条件的设置值，并将用于设置值改变的控制命令发送到与监视项目相对应的对象。

公开(公告)号：US06188090B1

公开(公告)日：2001-02-13

申请号：US09026915

申请日：1998-02-20

申请人： Shinji Miyagaki ,  Takashi Eshita ,  Satoshi Ohkubo ,  Kazuaki Takai

发明人： Shinji Miyagaki ,  Takashi Eshita ,  Satoshi Ohkubo ,  Kazuaki Takai

IPC分类号： H01L310328

CPC分类号： H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02494 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L29/66462

摘要： A method for fabricating a compound semiconductor device includes the steps of depositing a first group III-V compound semiconductor layer on a surface of a Si substrate while holding a temperature of the Si substrate at a first temperature, depositing a second group III-V compound semiconductor layer on the first group III-V compound semiconductor layer while holding the temperature of the substrate at a second, higher temperature, and depositing a third group III-V compound semiconductor layer on the second group III-V compound semiconductor layer while holding the temperature of the substrate at a third temperature higher than said second temperature, wherein the second group III-V compound semiconductor layer contains Al.

摘要翻译： 一种制造化合物半导体器件的方法包括以下步骤：在Si衬底的表面上沉积第一III-V族化合物半导体层，同时将Si衬底的温度保持在第一温度，沉积第二组III-V族化合物 半导体层，同时保持基板的温度处于第二较高温度，并且在第二组III-V族化合物半导体层上沉积第三组III-V族化合物半导体层，同时保持第 在比所述第二温度高的第三温度下的衬底的温度，其中第二组III-V族化合物半导体层含有Al。

公开(公告)号：US08355806B2

公开(公告)日：2013-01-15

申请号：US12646998

申请日：2009-12-24

申请人： Toshihiko Nakano ,  Satoshi Ohkubo ,  Ryota Mibe

发明人： Toshihiko Nakano ,  Satoshi Ohkubo ,  Ryota Mibe

IPC分类号： G05B13/02

CPC分类号： G05B17/02 ,  G06F11/3013 ,  G06F11/3089

摘要： An information control system capable of precisely defining and executing a condition for stipulating a state of an apparatus to be controlled. A storage unit stores an object definition table storing data items of a structure and a state of an object constituting a controlled system, and an actor definition table storing a monitor condition of an object state, an object monitor item and a setting value, as an actor as a control element for monitoring and controlling the object. A processing unit receives an object state from the controlled system, and when the state changes, transmits changed state value to the actor. The actor then refers to the actor definition table to judge whether the monitor condition is satisfied, and if satisfied, changes the setting value of the monitor condition and transmits a control command for setting value change to the object corresponding to the monitor item.

摘要翻译： 一种信息控制系统，其能够精确地定义和执行用于规定被控制装置的状态的条件。 存储单元存储存储构成受控系统的对象的结构和状态的数据项的对象定义表，以及存储对象状态，对象监视项和设定值的监视条件的动作者定义表，作为 演员作为监控和控制对象的控制元素。 处理单元从受控系统接收对象状态，并且当状态改变时，向演员发送改变的状态值。 然后，演员参考演员定义表来判断监视条件是否满足，如果满足，则改变监视条件的设置值，并将用于设置值改变的控制命令发送到与监视项目相对应的对象。