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    Vertical light emitting device and manufacturing method
    1.
    发明授权
    Vertical light emitting device and manufacturing method 有权
    垂直发光装置及其制造方法

    公开(公告)号：US08861562B2

    公开(公告)日：2014-10-14

    申请号：US13530255

    申请日：2012-06-22

    申请人： Toshihito Suzuki ,  Keishi Takaki ,  Suguru Imai ,  Yasumasa Kawakita

    发明人： Toshihito Suzuki ,  Keishi Takaki ,  Suguru Imai ,  Yasumasa Kawakita

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18327 ,  H01S5/18311 ,  H01S5/18333 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S2301/02 ,  H01S2301/166

    摘要： Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.

    摘要翻译： 提供一种垂直发光装置，其包括彼此面对并且使光振荡的上部多层反射膜和下部多层反射膜; 形成在上层多层反射膜的下方的中间层，具有与上层多层反射膜不同的组成的层; 以及电极部，其形成为将所述中间层夹在与所述光的振荡方向平行的横截面中，并且具有高于所述中间层的顶面的顶端。 在形成电极部以夹持中间层之后，将上部多层反射膜层叠在中间层上。

    Surface emitting laser element array
    2.
    发明授权
    Surface emitting laser element array 有权
    表面发射激光元件阵列

    公开(公告)号：US07881353B2

    公开(公告)日：2011-02-01

    申请号：US12414610

    申请日：2009-03-30

    申请人： Takeo Kageyama ,  Keishi Takaki ,  Naoki Tsukiji ,  Norihiro Iwai ,  Hitoshzi Shimizu ,  Yasumasa Kawakita ,  Suguru Imai

    发明人： Takeo Kageyama ,  Keishi Takaki ,  Naoki Tsukiji ,  Norihiro Iwai ,  Hitoshzi Shimizu ,  Yasumasa Kawakita ,  Suguru Imai

    IPC分类号： H01S5/00

    CPC分类号： H01S5/423 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3054

    摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.

    摘要翻译： 提供了一种低成本，高可靠性的表面发射激光元件阵列。 表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层， 发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。 第一导电类型半导体层区域布置在衬底和有源层之间。 表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

    SURFACE EMITTING LASER ELEMENT ARRAY
    3.
    发明申请
    SURFACE EMITTING LASER ELEMENT ARRAY 有权
    表面发射激光元件阵列

    公开(公告)号：US20090245312A1

    公开(公告)日：2009-10-01

    申请号：US12414610

    申请日：2009-03-30

    申请人： Takeo Kageyama ,  Keishi Takaki ,  Naoki Tsukiji ,  Norihiro Iwai ,  Hitoshzi Shimizu ,  Yasumasa Kawakita ,  Suguru Imai

    发明人： Takeo Kageyama ,  Keishi Takaki ,  Naoki Tsukiji ,  Norihiro Iwai ,  Hitoshzi Shimizu ,  Yasumasa Kawakita ,  Suguru Imai

    IPC分类号： H01S5/183 ,  H01S5/00

    CPC分类号： H01S5/423 ,  H01S5/0422 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/3054

    摘要： Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer. The surface emitting laser element array further has a current blocking layer arranged between the substrate and the first conduction type semiconductor layer area; and two electrodes connected to the first conduction type semiconductor layer area and the second conduction type semiconductor layer area, respectively, and arranged on a side of the current blocking layer opposite to the substrate.

    摘要翻译： 提供了一种低成本，高可靠性的表面发射激光元件阵列。 表面发射激光元件阵列具有具有第一导电类型的半导体的衬底; 以及多个表面发射激光器元件，每个表面发射激光器元件在衬底之上具有夹在第一导电类型半导体层区域和第二导电类型半导体层区域之间并且设置在上反射镜和下反射镜之间的有源层， 发射激光元件通过形成为具有到达衬底的深度的电分离结构彼此分离。 第一导电类型半导体层区域布置在衬底和有源层之间。 表面发射激光元件阵列还具有布置在衬底和第一导电类型半导体层区域之间的电流阻挡层; 以及分别连接到第一导电类型半导体层区域和第二导电类型半导体层区域并且布置在与衬底相对的电流阻挡层的一侧上的两个电极。

    Semiconductor laser element and manufacturing method thereof
    7.
    发明授权
    Semiconductor laser element and manufacturing method thereof 有权
    半导体激光元件及其制造方法

    公开(公告)号：US08488644B2

    公开(公告)日：2013-07-16

    申请号：US13133946

    申请日：2009-12-10

    申请人： Suguru Imai ,  Keishi Takaki ,  Norihiro Iwai ,  Kinuka Tanabe ,  Hitoshi Shimizu ,  Hirotatsu Ishii

    发明人： Suguru Imai ,  Keishi Takaki ,  Norihiro Iwai ,  Kinuka Tanabe ,  Hitoshi Shimizu ,  Hirotatsu Ishii

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18341 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/2072

    摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.

    摘要翻译： 半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。 谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层 在第一半导体层和电流限制层之间形成的掺杂浓度。 第一电极设置成接触第一半导体层的表面的一部分。 第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。 第二半导体层与扩散部接触。 第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

    SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 有权
    半导体激光元件及其制造方法

    公开(公告)号：US20110261852A1

    公开(公告)日：2011-10-27

    申请号：US13133946

    申请日：2009-12-10

    申请人： Suguru Imai ,  Keishi Takaki ,  Norihiro Iwai ,  Kinuka Tanabe ,  Hitoshi Shimizu ,  Hirotatsu Ishii

    发明人： Suguru Imai ,  Keishi Takaki ,  Norihiro Iwai ,  Kinuka Tanabe ,  Hitoshi Shimizu ,  Hirotatsu Ishii

    IPC分类号： H01S5/10 ,  H01L33/20 ,  B82Y20/00

    CPC分类号： H01S5/18341 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/2072

    摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.

    摘要翻译： 半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。 谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层 在第一半导体层和电流限制层之间形成的掺杂浓度。 第一电极设置成接触第一半导体层的表面的一部分。 第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。 第二半导体层与扩散部接触。 第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE AND VERTICAL CAVITY SURFACE EMITTING LASER ARRAY
    9.
    发明申请
    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE AND VERTICAL CAVITY SURFACE EMITTING LASER ARRAY 有权
    垂直孔表面发射激光器件和垂直孔表面发射激光阵列

    公开(公告)号：US20090304036A1

    公开(公告)日：2009-12-10

    申请号：US12388057

    申请日：2009-02-18

    申请人： Norihiro Iwai ,  Keishi Takaki ,  Suguru Imai

    发明人： Norihiro Iwai ,  Keishi Takaki ,  Suguru Imai

    IPC分类号： H01S5/183 ,  H01S5/34 ,  H01S5/42

    CPC分类号： H01S5/18369 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/32366

    摘要： In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate 10 is comprised of: a semiconductor lower DBR mirror 12, a cladding layer 14, a n-type contact layer 16, an active layer 18, an electric current constricting layer 20, a p-type cladding layer 22, a p-type contact layer 24, a phase adjusting layer 36 and a dielectric upper DBR mirror 28. The surface emitting laser should be formed such that the diameter X (μm) of the opening diameter of the previously mentioned electric current constricting layer 20 and diameter Y (μm) of the phase adjusting layer satisfy the following relation:X+1.9λ≦Y≦X+5.0λ (wherein λ indicates oscillation wavelength (μm) of the surface emitting laser).

    摘要翻译： 在表面发射激光器中，在保持单模特性的同时实现了低阈值电流和高功率输出。 表面发射激光器包括形成在GaAs衬底10上的分层结构，包括：半导体下DBR反射镜12，包层14，n型接触层16，有源层18，电流限制层20， p型覆层22，p型接触层24，相位调整层36和电介质上DBR反射镜28.表面发射激光器应形成为使得表面发射激光的直径X（mum） 前述的电流限制层20和相位调整层的直径Y（母）满足以下关系：X +1.9λλ= Y <= X +5.0λ（其中λ表示表面发射激光器的振荡波长（mum） ）。

    Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array
    10.
    发明授权
    Vertical cavity surface emitting laser device and vertical cavity surface emitting laser array 有权
    垂直腔表面发射激光器件和垂直腔表面发射激光器阵列

    公开(公告)号：US07907653B2

    公开(公告)日：2011-03-15

    申请号：US12388057

    申请日：2009-02-18

    申请人： Norihiro Iwai ,  Keishi Takaki ,  Suguru Imai

    发明人： Norihiro Iwai ,  Keishi Takaki ,  Suguru Imai

    IPC分类号： H01S3/10 ,  H01S5/00 ,  H01S3/08

    CPC分类号： H01S5/18369 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/32366

    摘要： In the surface emitting laser, low threshold electric current and high-power output are achieved while maintaining single mode characteristics. The surface emitting laser comprises a layered structure formed on a GaAs substrate 10 is comprised of: a semiconductor lower DBR mirror 12, a cladding layer 14, a n-type contact layer 16, an active layer 18, an electric current constricting layer 20, a p-type cladding layer 22, a p-type contact layer 24, a phase adjusting layer 36 and a dielectric upper DBR mirror 28. The surface emitting laser should be formed such that the diameter X (μm) of the opening diameter of the previously mentioned electric current constricting layer 20 and diameter Y (μm) of the phase adjusting layer satisfy the following relation:X+1.9λ≦Y≦X+5.0λ (wherein λ indicates oscillation wavelength (μm) of the surface emitting laser).

    摘要翻译： 在表面发射激光器中，在保持单模特性的同时实现了低阈值电流和高功率输出。 表面发射激光器包括形成在GaAs衬底10上的分层结构，包括：半导体下DBR反射镜12，包层14，n型接触层16，有源层18，电流限制层20， p型覆层22，p型接触层24，相位调整层36和电介质上DBR反射镜28.表面发射激光器应形成为使得表面发射激光器的开口直径的直径X（μm） 上述电流限制层20和相位调整层的直径Y（μm）满足以下关系：X +1.9λ＆nlE; Y＆nlE; X +5.0λ（其中λ表示表面发射激光器的振荡波长（μm））。