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公开(公告)号：US20120182061A1
公开(公告)日：2012-07-19
申请号：US13432610
申请日：2012-03-28
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/005 , H04B1/48
摘要： A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.
摘要翻译： 本发明的射频开关电路包括：天线端子和每个射频端子串联连接的n级通过FET（场效应晶体管），其中n是自然数; 连接到通过FET的栅极的射频防漏电阻器; 通常连接到连接到同一射频终端的n级通过FET的栅极的控制信号线; 和连接到至少两个控制信号线中的每一个并连接到串联的射频防漏电阻器的电阻器。两个控制信号线电容耦合在电阻器和通过FET之间。
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公开(公告)号：US08170500B2
公开(公告)日：2012-05-01
申请号：US12500020
申请日：2009-07-09
IPC分类号： H04B1/44
CPC分类号： H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/005 , H04B1/48
摘要： A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.
摘要翻译： 本发明的射频开关电路包括：天线端子和每个射频端子串联连接的n级通过FET（场效应晶体管），其中n是自然数; 连接到通过FET的栅极的射频防漏电阻器; 通常连接到连接到同一射频终端的n级通过FET的栅极的控制信号线; 和连接到至少两个控制信号线中的每一个并连接到串联的射频防漏电阻器的电阻器。两个控制信号线电容耦合在电阻器和通过FET之间。
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公开(公告)号：US20120038411A1
公开(公告)日：2012-02-16
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
IPC分类号： H03K17/56 , H03K17/687
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译： 根据一个实施例，高频开关包括高频开关IC芯片。 高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。 输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。 多个输出端子布置在高频开关IC芯片的外周的表面上。 输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。
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公开(公告)号：US08698574B2
公开(公告)日：2014-04-15
申请号：US13046937
申请日：2011-03-14
申请人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
发明人： Masayuki Sugiura , Noriyasu Kurihara , Toshiki Seshita , Hirotsugu Wakimoto , Yoshitomo Sagae , Toshiyuki Shimizu , Yoshio Itagaki , Masanori Ochi
CPC分类号： H03K17/6874 , H01L23/66 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2223/6627 , H01L2224/0401 , H01L2224/05554 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13144 , H01L2224/16157 , H01L2224/16165 , H01L2924/13091 , H01L2924/14 , H01L2924/142 , H01L2924/00
摘要： According to one embodiment, a high-frequency switch includes a high-frequency switch IC chip. The high-frequency switch IC chip has a high-frequency switching circuit section including an input terminal, a plurality of switching elements, a plurality of high-frequency signal lines, and a plurality of output terminals. The input terminal is connected to each of the plurality of output terminals via each of the plurality of switching elements with the high-frequency signal lines having the same lengths. The plurality of output terminals are arranged on a surface at an outer periphery of the high-frequency switch IC chip. The input terminal is arranged on the surface of the high-frequency switch IC chip at the center of the high-frequency switch IC circuit section.
摘要翻译： 根据一个实施例，高频开关包括高频开关IC芯片。 高频开关IC芯片具有包括输入端子，多个开关元件，多个高频信号线以及多个输出端子的高频开关电路部。 输入端子经由多个开关元件中的每一个连接到多个输出端子中的每一个，高频信号线具有相同的长度。 多个输出端子布置在高频开关IC芯片的外周的表面上。 输入端子布置在高频开关IC电路部分中心的高频开关IC芯片的表面上。
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公开(公告)号：US08320843B2
公开(公告)日：2012-11-27
申请号：US13432610
申请日：2012-03-28
IPC分类号： H04B1/44
CPC分类号： H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/005 , H04B1/48
摘要： A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.
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公开(公告)号：US20100073066A1
公开(公告)日：2010-03-25
申请号：US12500020
申请日：2009-07-09
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/005 , H04B1/48
摘要： A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.
摘要翻译： 本发明的射频开关电路包括：天线端子和每个射频端子串联连接的n级通过FET（场效应晶体管），其中n是自然数; 连接到通过FET的栅极的射频防漏电阻器; 通常连接到连接到同一射频终端的n级通过FET的栅极的控制信号线; 和连接到至少两个控制信号线中的每一个并连接到串联的射频防漏电阻器的电阻器。两个控制信号线电容耦合在电阻器和通过FET之间。
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公开(公告)号：US08487688B2
公开(公告)日：2013-07-16
申请号：US13229985
申请日：2011-09-12
申请人： Toshiki Seshita
发明人： Toshiki Seshita
IPC分类号： H03K3/00
CPC分类号： H03K3/02 , H01L27/1203
摘要： According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.
摘要翻译： 根据一个实施例，半导体器件包括接口，电源，驱动器和开关部分。 该接口包括第一个MOSFET，并将输入串行数据的终端开关信号转换为并行数据。 第一个MOSFET被提供在SOI衬底上并且具有处于浮置状态的背栅极。 电源包括第二MOSFET并且产生高于要供应到接口的电源的电位的导通电位。 第二个MOSFET设置在SOI衬底上，并具有连接到源极的背栅极。 驱动器包括第三MOSFET，并且根据并行数据输出用于控制ON电位处于高电平的控制信号。 第三个MOSFET被提供在SOI衬底上并具有连接到源极的背栅极。
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公开(公告)号：US08391805B2
公开(公告)日：2013-03-05
申请号：US13052473
申请日：2011-03-21
IPC分类号： H04B1/44
CPC分类号： H03K17/687 , H03K17/063 , H03K17/162 , H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/48
摘要： According to one embodiment, a semiconductor switch circuit includes a switch section, a decoder section, a DC-DC converter, a driver section, a first filter circuit, a first filter bypass circuit and a first bypass control circuit. The switch section includes an input-output terminal, radio frequency signal terminals, and semiconductor switch elements. The decoder section generates a switch control signal controlling a conduction and a non-conduction state of switch elements. The DC-DC converter generates a first potential. The driver section supplies the first and a second potential to a gate electrode of the switch elements. The first filter circuit is electrically connected between the DC-DC converter and the driver section and outputs the first potential to the driver section. The first filter bypass circuit is electrically connected with the first filter circuit. The first bypass control circuit supplies a first mode signal to the first filter bypass circuit.
摘要翻译： 根据一个实施例，半导体开关电路包括开关部分，解码器部分，DC-DC转换器，驱动器部分，第一滤波器电路，第一滤波器旁路电路和第一旁路控制电路。 开关部分包括输入输出端子，射频信号端子和半导体开关元件。 解码器部分产生控制开关元件的导通和非导通状态的开关控制信号。 DC-DC转换器产生第一电位。 驱动器部分将第一和第二电位提供给开关元件的栅电极。 第一滤波器电路电连接在DC-DC转换器和驱动器部分之间，并将第一电位输出到驱动器部分。 第一滤波器旁路电路与第一滤波器电路电连接。 第一旁路控制电路向第一滤波器旁路电路提供第一模式信号。
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公开(公告)号：US20130038362A1
公开(公告)日：2013-02-14
申请号：US13614108
申请日：2012-09-13
申请人： Toshiki Seshita
发明人： Toshiki Seshita
CPC分类号： H03K17/693
摘要： According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power supply terminal. The driver is connected to an output of the voltage generator and is configured to output the first potential in response to input of high level and to output the second potential in response to input of low level. The switch section is configured to switch connection between terminals in response to an output of the driver. The power supply controller is configured to control the output of the voltage generator.
摘要翻译： 根据一个实施例，半导体开关包括电压发生器，驱动器，开关部分和电源控制器。 电压发生器被配置为产生第一电位和负第二电位。 第一个电位高于供给电源端子的电源电压。 驱动器连接到电压发生器的输出端，并且被配置为响应于高电平的输入而输出第一电位，并且响应于低电平的输入而输出第二电位。 开关部分被配置为响应于驱动器的输出来切换端子之间的连接。 电源控制器被配置为控制电压发生器的输出。
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公开(公告)号：US20130005279A1
公开(公告)日：2013-01-03
申请号：US13422559
申请日：2012-03-16
IPC分类号： H04B1/44 , H03K17/687 , H03K17/56
CPC分类号： H03K17/693 , H03K17/145 , H03K2217/0081 , H04B1/48
摘要： According to one embodiment, a semiconductor switch includes a switch section, a driver, and a power supply. The switch section switches a connection between a common terminal and a plurality of radio-frequency terminals. The driver outputs a control signal to the switch section based on a terminal switching signal. The power supply generates a first potential based on a reference potential varying in accordance with temperature and outputs the first potential to the driver.
摘要翻译： 根据一个实施例，半导体开关包括开关部分，驱动器和电源。 开关部分切换公共端子和多个射频终端之间的连接。 驱动器根据终端切换信号向开关部输出控制信号。 电源基于根据温度变化的参考电位产生第一电位，并将第一电位输出给驾驶员。
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