Substrate transfer apparatus
    1.
    发明授权
    Substrate transfer apparatus 失效
    基板转印装置

    公开(公告)号:US5151008A

    公开(公告)日:1992-09-29

    申请号:US703777

    申请日:1991-05-21

    IPC分类号: B25J9/00 B25J9/10 H01L21/677

    摘要: A substrate transfer apparatus includes two transfer arms pivotably arranged on a support table on opposite sides from each other with respect to a center of the support table. Each of the transfer arms includes: a first set of parallel links, a second set of parallel links, and a substrate holding member. The first set of the links is pivotably connected to the second set of the links at one ends thereof. The other ends of the first set of the links are pivotably connected to the support table. The substrate holding member is provided on the other end of the second set of the links. The each of the substrate holding members moves outward from the support table by stretching of the transfer arms and returns to the support table by bending of the transfer arms, and the transfer arms are bent in an opposite direction to each other with respect to the support table.

    摘要翻译: 基板传送装置包括相对于支撑台的中心彼此相对侧可枢转地布置在支撑台上的两个传送臂。 每个传送臂包括:第一组平行连杆,第二组平行连杆,以及基板保持部件。 第一组链节在其一端可枢转地连接到第二组连杆。 第一组连杆的另一端可枢转地连接到支撑台。 衬底保持构件设置在第二组连杆的另一端上。 每个基板保持构件通过拉伸传送臂从支撑台向外移动,并且通过传送臂的弯曲返回到支撑台,并且传送臂相对于支撑件彼此相反的方向弯曲 表。

    Vacuum processing apparatus and method
    2.
    发明授权
    Vacuum processing apparatus and method 失效
    真空处理装置及方法

    公开(公告)号:US5851296A

    公开(公告)日:1998-12-22

    申请号:US814018

    申请日:1997-03-10

    摘要: A vacuum processing apparatus includes a reaction chamber, a non-reaction chamber which is a load-lock chamber or a double load-lock chamber. A double arm is accommodated in the non-reaction chamber, and includes a first arm and a second arm for taking out a processed wafer from the reaction chamber and supplying an unprocessed wafer to the reaction chamber. Wafer elevating mechanisms are provided in the reaction chamber and the non-reaction chamber. The double arm and the wafer elevating mechanisms are driven by a single drive source. Also, a selective engagement mechanism is provided at the reaction chamber and at the non-reaction chamber for selectively engaging the driving source with any one of the wafer elevating mechanisms at the reaction chamber and the non-reaction chamber to drive the double arm and the wafer elevating mechanism at the selected chamber.

    摘要翻译: 真空处理装置包括反应室,作为负载锁定室的非反应室或双重负载锁定室。 双臂容纳在非反应室中,并且包括第一臂和第二臂,用于从反应室中取出加工的晶片并将未加工的晶片供应到反应室。 在反应室和非反应室中设置有晶片升降机构。 双臂和晶片升降机构由单个驱动源驱动。 此外,在反应室和非反应室处提供选择性接合机构,用于选择性地将驱动源与反应室和非反应室中的任何一个晶片升降机构接合以驱动双臂和 晶圆升降机构。

    Method of handling wafers in a vacuum processing apparatus
    3.
    发明授权
    Method of handling wafers in a vacuum processing apparatus 失效
    在真空处理装置中处理晶片的方法

    公开(公告)号:US5636963A

    公开(公告)日:1997-06-10

    申请号:US380713

    申请日:1995-01-30

    摘要: A vacuum processing apparatus includes a reaction chamber, a non-reaction chamber which is a load-lock chamber or a double load-lock chamber. A double arm is accommodated in the non-reaction chamber, and includes a first arm and a second arm for taking out a processed wafer from the reaction chamber and supplying an unprocessed wafer to the reaction chamber. Wafer elevating mechanisms are provided in the reaction chamber and the non-reaction chamber. The double arm and the wafer elevating mechanisms are driven by a single drive source. Also, a selective engagement mechanism is provided at the reaction chamber and at the non-reaction chamber for selectively engaging the driving source with any one of the wafer elevating mechanisms at the reaction chamber and the non-reaction chamber to drive the double arm and the wafer elevating mechanism at the selected chamber.

    摘要翻译: 真空处理装置包括反应室,作为负载锁定室的非反应室或双重负载锁定室。 双臂容纳在非反应室中,并且包括第一臂和第二臂,用于从反应室中取出加工的晶片并将未加工的晶片供应到反应室。 在反应室和非反应室中设置有晶片升降机构。 双臂和晶片升降机构由单个驱动源驱动。 此外,在反应室和非反应室处提供选择性接合机构,用于选择性地将驱动源与反应室和非反应室中的任何一个晶片升降机构接合以驱动双臂和 晶圆升降机构。

    Plasma processing apparatus
    4.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号:US5766364A

    公开(公告)日:1998-06-16

    申请号:US893940

    申请日:1997-07-15

    摘要: Generated heat is effectively dissipated to prevent thermal deformation of a gas ejector plate in a plasma processing apparatus which is capable of processing a substrate of large scale. A temperature controlling plate 106 and heat conductor 109 are fixedly disposed on the upper electrode-cum-gas ejector plate 105 which is provided with a multiplicity of gas ejecting apertures 105a disposed at regular intervals. The heat conductor 109 is constructed to be a latticed member for effectively conducting heat from the gas ejector plate 105 to the temperature controlling plate 106, and has a plurality of gas pressure equalizing spaces 109a defined between crossing bars of the lattice for pressuring process gas to be evenly ejected through the gas ejecting apertures 105a.

    摘要翻译: 产生的热量被有效地消散,以防止能够处理大规模基板的等离子体处理装置中的气体喷射板的热变形。 温度控制板106和导热体109被固定地设置在上部电极 - 气体顶出器板105上,该喷射板105设置有以规则间隔设置的多个气体喷射孔105a。 热导体109被构造为用于将热量从气体喷射板105有效地​​传导到温度控制板106的格子构件,并且具有限定在格子的交叉条之间的多个气体平衡空间109a,用于将工作气体加压到 均匀地喷射通过气体喷射孔105a。