公开(公告)号：US08569753B2

公开(公告)日：2013-10-29

申请号：US13117588

申请日：2011-05-27

申请人： Atsuo Isobe ,  Yoshinori Ieda ,  Keitaro Imai ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

发明人： Atsuo Isobe ,  Yoshinori Ieda ,  Keitaro Imai ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

IPC分类号： H01L21/02

CPC分类号： H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/1225 ,  H01L28/60

摘要： The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.

摘要翻译： 提供了一种半导体器件，其中包括第一晶体管，第二晶体管和电容器的多个存储单元被布置成矩阵，并且布线（也称为位线）用于连接其中一个存储单元和另一个 第一晶体管中的一个存储单元和源极或漏极区域通过导电层和设置在其间的第二晶体管中的源极或漏极电连接。 利用这种结构，与第一晶体管中的源极或漏极以及第二晶体管中的源极或漏极连接到不同布线的结构相比，可以减少布线的数量。 因此，可以提高半导体器件的集成度。

公开(公告)号：US08779433B2

公开(公告)日：2014-07-15

申请号：US13115239

申请日：2011-05-25

申请人： Atsuo Isobe ,  Yoshinori Ieda ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

发明人： Atsuo Isobe ,  Yoshinori Ieda ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

IPC分类号： H01L29/10 ,  H01L27/115 ,  H01L27/108

CPC分类号： H01L27/10852 ,  G11C16/0433 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225

摘要： It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.

摘要翻译： 本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且对写入数量没有限制。 半导体器件包括设置在第一晶体管上的第二晶体管和电容器。 使用具有相对于栅电极的蚀刻选择性的材料形成与第一晶体管的栅电极接触的第二晶体管的源电极。 通过使用相对于第一晶体管的栅电极具有蚀刻选择性的材料形成第二晶体管的源电极，可以减小布局的裕度，从而可以提高半导体器件的集成度。

公开(公告)号：US20110298027A1

公开(公告)日：2011-12-08

申请号：US13115239

申请日：2011-05-25

申请人： Atsuo Isobe ,  Yoshinori Ieda ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

发明人： Atsuo Isobe ,  Yoshinori Ieda ,  Kiyoshi Kato ,  Yuto Yakubo ,  Yuki Hata

IPC分类号： H01L27/108 ,  H01L27/088 ,  H01L21/336

CPC分类号： H01L27/10852 ,  G11C16/0433 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/1225

摘要： It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.

摘要翻译： 本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且对写入数量没有限制。 半导体器件包括设置在第一晶体管上的第二晶体管和电容器。 使用具有相对于栅电极的蚀刻选择性的材料形成与第一晶体管的栅电极接触的第二晶体管的源电极。 通过使用相对于第一晶体管的栅电极具有蚀刻选择性的材料形成第二晶体管的源电极，可以减小布局的裕度，从而可以提高半导体器件的集成度。

公开(公告)号：US09111795B2

公开(公告)日：2015-08-18

申请号：US13444124

申请日：2012-04-11

申请人： Yoshinori Ieda ,  Atsuo Isobe ,  Yutaka Shionoiri ,  Tomoaki Atsumi

发明人： Yoshinori Ieda ,  Atsuo Isobe ,  Yutaka Shionoiri ,  Tomoaki Atsumi

IPC分类号： H01L27/108 ,  H01L27/115 ,  H01L27/105 ,  H01L49/02 ,  H01L27/12

CPC分类号： H01L27/1207 ,  H01L27/092 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10805 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/40 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78 ,  H01L29/78648 ,  H01L29/7869

摘要： Provided is a semiconductor device which has low power consumption and can operate at high speed. The semiconductor device includes a memory element including a first transistor including crystalline silicon in a channel formation region, a capacitor for storing data of the memory element, and a second transistor which is a switching element for controlling supply, storage, and release of charge in the capacitor. The second transistor is provided over an insulating film covering the first transistor. The first and second transistors have a source electrode or a drain electrode in common.

摘要翻译： 提供具有低功耗并且可以高速运行的半导体器件。 半导体器件包括：存储元件，其包括在沟道形成区域中包括晶体硅的第一晶体管，用于存储存储元件的数据的电容器;以及第二晶体管，其是用于控制电荷的供应，存储和释放的开关元件 电容器。 第二晶体管设置在覆盖第一晶体管的绝缘膜上。 第一和第二晶体管共同地具有源电极或漏电极。

公开(公告)号：US20120214259A1

公开(公告)日：2012-08-23

申请号：US13213458

申请日：2011-08-19

申请人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

发明人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/66

CPC分类号： G01N23/2258 ,  G01N2223/611

摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

摘要翻译： 经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。 氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素 通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

公开(公告)号：US08748889B2

公开(公告)日：2014-06-10

申请号：US13188992

申请日：2011-07-22

申请人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

发明人： Toshinari Sasaki ,  Hitomi Sato ,  Kosei Noda ,  Yuta Endo ,  Mizuho Ikarashi ,  Keitaro Imai ,  Atsuo Isobe ,  Yutaka Okazaki

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

摘要翻译： 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US08450123B2

公开(公告)日：2013-05-28

申请号：US13213458

申请日：2011-08-19

申请人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

发明人： Yutaka Okazaki ,  Keitaro Imai ,  Atsuo Isobe ,  Shunpei Yamazaki

IPC分类号： H01L21/66

CPC分类号： G01N23/2258 ,  G01N2223/611

摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.

摘要翻译： 经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。 氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素 通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

公开(公告)号：US20050158936A1

公开(公告)日：2005-07-21

申请号：US11064820

申请日：2005-02-25

申请人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

发明人： Kiyoshi Kato ,  Toshihiko Saito ,  Atsuo Isobe ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/8234

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78675 ,  H01L2221/68368

摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.

公开(公告)号：US08766255B2

公开(公告)日：2014-07-01

申请号：US13418558

申请日：2012-03-13

申请人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

发明人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

IPC分类号： H01L29/786

CPC分类号： H01L27/1156 ,  H01L21/76232 ,  H01L27/1225 ,  H01L29/4236

摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.

摘要翻译： 一种其中可以实现保持存储数据的性质的改进的半导体器件。 此外，半导体器件的功耗降低。 使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构 栅电极和用于元件隔离的沟槽。 使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。 此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。

公开(公告)号：US20120235150A1

公开(公告)日：2012-09-20

申请号：US13418558

申请日：2012-03-13

申请人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

发明人： Atsuo Isobe ,  Toshihiko Saito ,  Kiyoshi Kato

IPC分类号： H01L29/786 ,  H01L27/108 ,  H01L29/04

CPC分类号： H01L27/1156 ,  H01L21/76232 ,  H01L27/1225 ,  H01L29/4236

摘要： A semiconductor device in which improvement of a property of holding stored data can be achieved. Further, power consumption of a semiconductor device is reduced. A transistor in which a wide-gap semiconductor material capable of sufficiently reducing the off-state current of a transistor (e.g., an oxide semiconductor material) in a channel formation region is used and which has a trench structure, i.e., a trench for a gate electrode and a trench for element isolation, is provided. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor enables data to be held for a long time. Further, since the transistor has the trench for a gate electrode, the occurrence of a short-channel effect can be suppressed by appropriately setting the depth of the trench even when the distance between the source electrode and the drain electrode is decreased.

摘要翻译： 一种其中可以实现保持存储数据的性质的改进的半导体器件。 此外，半导体器件的功耗降低。 使用能够充分降低沟道形成区域中的晶体管（例如，氧化物半导体材料）的截止电流的宽间隙半导体材料的晶体管，其具有沟槽结构，即，沟槽结构 栅电极和用于元件隔离的沟槽。 使用能够充分降低晶体管的截止电流的半导体材料能够长时间保持数据。 此外，由于晶体管具有用于栅极电极的沟槽，所以即使当源电极和漏电极之间的距离减小时，也可以通过适当地设置沟槽的深度来抑制短沟道效应的发生。