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231 条记录 (耗时 0.031 秒)

    Exhaust gas treatment system
    4.
    发明授权
    Exhaust gas treatment system 有权
    废气处理系统

    公开(公告)号：US08440141B2

    公开(公告)日：2013-05-14

    申请号：US13273390

    申请日：2011-10-14

    申请人： Katsumi Nochi ,  Masanao Yonemura ,  Yoshiaki Obayashi ,  Hitoshi Nakamura ,  Toshio Koyanagi

    发明人： Katsumi Nochi ,  Masanao Yonemura ,  Yoshiaki Obayashi ,  Hitoshi Nakamura ,  Toshio Koyanagi

    IPC分类号： B01D50/00

    CPC分类号： B01D53/9477 ,  B01D53/9418 ,  B01D53/944 ,  B01D2251/2062 ,  B01D2257/708 ,  Y02A50/2341 ,  Y02A50/235

    摘要： It is intended to provide an exhaust gas treatment system, which allows for VOC removal at lower temperatures and thereby improves the durability of catalysts and suppresses carbon monoxide generation at the final outlet of the system. The present invention provides a treatment system of an exhaust gas containing a nitrogen oxide, carbon monoxide, and a volatile organic compound comprising: an exhaust gas treatment means for removing the nitrogen oxide by reduction with ammonia and partially oxidizing the VOC to CO; and a CO/VOC removal means for oxidizing the CO and partially unreacted VOC, in this order from the upstream flow of the exhaust gas.

    摘要翻译： 旨在提供一种废气处理系统，其允许在较低温度下除去VOC，从而提高催化剂的耐久性，并抑制系统最终出口处的一氧化碳产生。 本发明提供一种含有氮氧化物，一氧化碳和挥发性有机化合物的排气的处理系统，包括：废气处理装置，用于通过用氨还原并将VOC部分氧化成CO来除去氮氧化物; 以及用于从排气的上游流动中依次氧化CO和部分未反应的VOC的CO / VOC去除装置。

    ROTARY ENCODER AND ROTATION MECHANISM INCLUDING THE SAME
    6.
    发明申请
    ROTARY ENCODER AND ROTATION MECHANISM INCLUDING THE SAME 有权
    旋转编码器和旋转机构，包括它们

    公开(公告)号：US20110147572A1

    公开(公告)日：2011-06-23

    申请号：US12968948

    申请日：2010-12-15

    申请人： Hitoshi Nakamura

    发明人： Hitoshi Nakamura

    IPC分类号： G01D5/34

    CPC分类号： G01D5/2448

    摘要： A rotary encoder includes two first detection units disposed at positions that are symmetrical about a rotation axis, each of the first detection units outputting an incremental signal, and second detection unit that outputs an absolute signal φA. The rotary encoder includes a storage unit that stores a plurality of formulas for correcting errors of the incremental signals, the formulas being different from each other in accordance with the signal φA, and the errors being generated due to eccentricity; a calculation unit that calculates a corrected phase φI by performing operation on the incremental signals by using one of the formulas corresponding to the signal φA; and a generation unit that generates a rotation angle of the scale on the basis of the phase φI and the signal φA.

    摘要翻译： 旋转编码器包括设置在关于旋转轴对称的位置处的两个第一检测单元，每个第一检测单元输出增量信号，第二检测单元输出绝对信号。 旋转编码器包括存储单元，其存储用于校正增量信号的误差的多个公式，所述公式根据信号＆amp; A而彼此不同，并且由偏心产生的误差; 通过使用对应于信号＆amp; A的公式中的一个对增量信号进行操作来计算校正相位＆amp; I的计算单元; 以及生成单元，其基于相位I和信号A生成刻度的旋转角度。

    Refill for correction pen and refill unit
    7.
    发明授权
    Refill for correction pen and refill unit 失效
    补充笔和笔芯单元

    公开(公告)号：US07600938B2

    公开(公告)日：2009-10-13

    申请号：US10548125

    申请日：2004-03-03

    申请人： Kyoko Kobayashi ,  Makoto Ono ,  Akira Fukai ,  Takao Koyama ,  Hitoshi Nakamura ,  Kei Omoto ,  Tadashi Koriki

    发明人： Kyoko Kobayashi ,  Makoto Ono ,  Akira Fukai ,  Takao Koyama ,  Hitoshi Nakamura ,  Kei Omoto ,  Tadashi Koriki

    IPC分类号： B43K5/00 ,  B43K5/18

    CPC分类号： B43K1/088 ,  B43K7/02 ,  B43K7/03 ,  B43K7/08 ,  B43K7/10 ,  B43K7/12 ,  B43K24/08 ,  B43L19/0018 ,  B43L19/0068 ,  B43M11/085 ,  C09D10/00 ,  C09D11/18

    摘要： A refill for a correction pen is constructed of a molded article of a polyamide resin obtained from monomers having an aromatic ring or a naphthene ring, a molded article of a blend of two or more kinds of polyamide resins, or a molded article having a multi-layered structure of two or more layers whose innermost layer in contact with the correction fluid is constituted of a polyamide resin. The applying part of a refill unit mounted on a ballpoint type applicator having a pressurizing mechanism in linkage with clicking action is formed by press fitting the rear end of a ballpoint pen tip having a rotatable ball to the attachment portion at the front end of an ink reservoir and a metal tube is squeezed to cover the outer periphery of the attachment portion at the front end of the ink reservoir to which the tip is fitted.

    摘要翻译： 用于校正笔的笔芯由由具有芳环或环烷烃的单体获得的聚酰胺树脂的模塑制品，两种或多种聚酰胺树脂的共混物的模塑制品或具有多层结构的模制品构成， 与校正流体接触的最内层由聚酰胺树脂构成的两层以上的层的结构。 安装在具有与点击动作联动的加压机构的圆珠笔式涂抹器上的补充单元的涂布部分通过将具有可旋转球的圆珠笔笔尖的后端压配合到墨水的前端的附着部分而形成 储存器和金属管被挤压以覆盖安装部分的前端处的墨水容器的前端处的安装部分的外周边。

    Semiconductor device having an improved wiring or electrode structure
    8.
    发明授权
    Semiconductor device having an improved wiring or electrode structure 有权
    具有改进的布线或电极结构的半导体器件

    公开(公告)号：US07569911B2

    公开(公告)日：2009-08-04

    申请号：US11410194

    申请日：2006-04-25

    申请人： Toshihiko Shiga ,  Hitoshi Nakamura ,  Junji Tanimura

    发明人： Toshihiko Shiga ,  Hitoshi Nakamura ,  Junji Tanimura

    IPC分类号： H01L29/93

    CPC分类号： H01L21/28575 ,  H01L29/452 ,  Y10S257/928

    摘要： An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.

    摘要翻译： 通过在p型GaAs层上堆叠下Ti层，扩散防止层，上Ti层和金属（Au）层来形成欧姆电极。 扩散防止层包括钽（Ta）或铌（Nb）。 因此，可以防止金属层中的p型GaAs层和Au中的Ga和As的相互扩散，并且可以抑制在高温，高湿度环境中的欧姆电极的电阻率的变化。

    Adapter device
    9.
    发明授权
    Adapter device 有权
    适配器设备

    公开(公告)号：US07542094B2

    公开(公告)日：2009-06-02

    申请号：US11313703

    申请日：2005-12-22

    申请人： Hitoshi Nakamura ,  Tomoyasu Katsuyama

    发明人： Hitoshi Nakamura ,  Tomoyasu Katsuyama

    IPC分类号： H04N3/14 ,  G03B17/00

    CPC分类号： H04N5/2251 ,  H04N5/262

    摘要： The present invention provides an adapter device adapted for easier operation of a lid that opens and closes an opening through which a video camera is to be inserted and on which a viewfinder is to be installed. The present invention provides an adapter device to which a video camera device is to be attached, the adapter device including an adapter body having formed therein a receptacle in which the video camera device is to be installed and having formed at the rear end thereof an opening through which the video camera device is to be inserted first at a lens-unit mount thereof, a lid provided pivotably on a vertical pivot of the adapter body to open and close the insertion opening, and a mount base provided on the top of the lid on which a viewfinder is to be installed.

    摘要翻译： 本发明提供一种适配器装置，其适于更容易地操作打开和关闭要插入摄像机的开口的盖子，并且其上将安装取景器。 本发明提供了一种适配器装置，摄像机装置将被安装在该适配器装置上，适配器装置包括适配器主体，其中形成有插座，摄像机装置将安装在该插座中，并在其后端形成开口 首先将摄像机装置插入其透镜单元安装件，可转动地设置在适配器主体的垂直枢轴上以打开和关闭插入口的盖以及设置在盖的顶部上的安装座 在其上安装取景器。

    EL SEMICONDUCTOR DEVICE
    10.
    发明申请
    EL SEMICONDUCTOR DEVICE 有权
    EL半导体器件

    公开(公告)号：US20090059985A1

    公开(公告)日：2009-03-05

    申请号：US12038062

    申请日：2008-02-27

    申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

    IPC分类号： H01S5/32

    CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

    摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

    摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量 。