公开(公告)号：US20080194062A1

公开(公告)日：2008-08-14

申请号：US12099238

申请日：2008-04-08

申请人： Toshiyasu KAWAI ,  Hidekazu Matsuura

发明人： Toshiyasu KAWAI ,  Hidekazu Matsuura

IPC分类号： H01L21/60

CPC分类号： H01L23/49513 ,  C09J7/10 ,  C09J7/22 ,  C09J7/35 ,  C09J177/00 ,  C09J179/08 ,  C09J2461/006 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  C09J2481/006 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

摘要翻译： 一种用于半导体的粘合膜，其包括至少一个树脂层，并且在引线框架结合之后具有25℃，树脂层和引线框架之间的90°剥离强度为至少5N / m 并且在将引线框架结合到用于半导体的粘合剂膜并用密封材料密封之后，至少在0-250℃的温度的一个点处，90°的强度为至多1000N / 树脂层和引线框架和密封材料中的每一个之间; 引线框架和使用半导体用粘合膜的半导体器件; 以及半导体器件的制造方法。

公开(公告)号：US07057266B2

公开(公告)日：2006-06-06

申请号：US10734124

申请日：2003-12-15

申请人： Toshiyasu Kawai ,  Hidekazu Matsuura

发明人： Toshiyasu Kawai ,  Hidekazu Matsuura

IPC分类号： H01L23/495

CPC分类号： H01L23/49513 ,  C09J7/10 ,  C09J7/22 ,  C09J7/35 ,  C09J177/00 ,  C09J179/08 ,  C09J2461/006 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  C09J2481/006 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

公开(公告)号：US06700185B1

公开(公告)日：2004-03-02

申请号：US10111231

申请日：2002-04-23

申请人： Toshiyasu Kawai ,  Hidekazu Matsuura

发明人： Toshiyasu Kawai ,  Hidekazu Matsuura

IPC分类号： H01L23495

CPC分类号： H01L23/49513 ,  C09J7/10 ,  C09J7/22 ,  C09J7/35 ,  C09J177/00 ,  C09J179/08 ,  C09J2461/006 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  C09J2481/006 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

摘要翻译： 一种用于半导体的粘合膜，其包括至少一个树脂层，并且在引线框架结合之后具有25℃，树脂层和引线框架之间的90°剥离强度为至少5N / m 并且在将引线框架结合到用于半导体的粘合剂膜并用密封材料密封之后，至少在0-250℃的温度的一个点处，90°的强度为至多1000N / 树脂层和引线框架和密封材料中的每一个之间; 引线框架和使用半导体用粘合膜的半导体器件; 以及半导体器件的制造方法。

公开(公告)号：US20060043607A1

公开(公告)日：2006-03-02

申请号：US10519713

申请日：2004-02-19

申请人： Hidekazu Matsuura ,  Toshiyasu Kawai

发明人： Hidekazu Matsuura ,  Toshiyasu Kawai

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3107 ,  H01L24/97 ,  H01L2221/68309 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/181 ,  Y10T428/2839 ,  Y10T428/31678 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： An adhesive film for semiconductor use of the present invention is used in a method in which, after the adhesive film for semiconductor use is laminated to one side of a metal sheet, the metal sheet is processed to give a wiring circuit, a semiconductor die is mounted and molded, and the adhesive film is then peeled off. The adhesive film includes a resin layer A formed on one side or both sides of a support film, the 90 degree peel strength between the resin layer A and the metal sheet prior to the processing of the metal sheet laminated with the adhesive film for semiconductor use to give the wiring circuit is 20 N/m or greater at 25° C., and the 90 degree peel strengths, after molding with a molding compound the wiring circuit laminated with the adhesive film for semiconductor use, between the resin layer A and the wiring circuit and between the resin layer A and the molding compound are both 1000 N/m or less at at least one point in the temperature range of 0° C. to 250° C.

摘要翻译： 本发明的半导体用粘合膜用于将半导体用粘合膜层叠在金属板的一面之后，对该金属板进行加工而形成布线电路，半导体管芯为 安装和模制，然后将粘合剂膜剥离。 粘合膜包括在支撑膜的一侧或两侧形成的树脂层A，在与用于半导体用途的粘合膜层压的金属片处理之前树脂层A和金属片之间的90度剥离强度 为了使布线电路在25℃下为20N / m以上，在90度剥离强度下，在树脂层A和 布线电路和树脂层A与模塑料之间在0℃至250℃的温度范围内的至少一个点处均为1000N / m以下。

公开(公告)号：US07378722B2

公开(公告)日：2008-05-27

申请号：US11347204

申请日：2006-02-06

申请人： Toshiyasu Kawai ,  Hidekazu Matsuura

发明人： Toshiyasu Kawai ,  Hidekazu Matsuura

IPC分类号： H01L23/495

CPC分类号： H01L23/49513 ,  C09J7/10 ,  C09J7/22 ,  C09J7/35 ,  C09J177/00 ,  C09J179/08 ,  C09J2461/006 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  C09J2481/006 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

摘要翻译： 一种用于半导体的粘合膜，其包括至少一个树脂层，并且在引线框架结合之后具有25℃，树脂层和引线框架之间的90°剥离强度为至少5N / m 并且在将引线框架结合到用于半导体的粘合剂膜并用密封材料密封之后，至少在0-250℃的温度的一个点处，90°的强度为至多1000N / 树脂层和引线框架和密封材料中的每一个之间; 引线框架和使用半导体用粘合膜的半导体器件; 以及半导体器件的制造方法。

公开(公告)号：US20060138616A1

公开(公告)日：2006-06-29

申请号：US11347204

申请日：2006-02-06

申请人： Toshiyasu Kawai ,  Hidekazu Matsuura

发明人： Toshiyasu Kawai ,  Hidekazu Matsuura

IPC分类号： H01L23/495

CPC分类号： H01L23/49513 ,  C09J7/10 ,  C09J7/22 ,  C09J7/35 ,  C09J177/00 ,  C09J179/08 ,  C09J2461/006 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  C09J2481/006 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

公开(公告)号：US07479412B2

公开(公告)日：2009-01-20

申请号：US12099238

申请日：2008-04-08

申请人： Toshiyasu Kawai ,  Hidekazu Matsuura

发明人： Toshiyasu Kawai ,  Hidekazu Matsuura

IPC分类号： H01L21/00

CPC分类号： H01L23/49513 ,  C09J7/10 ,  C09J7/22 ,  C09J7/35 ,  C09J177/00 ,  C09J179/08 ,  C09J2461/006 ,  C09J2467/006 ,  C09J2477/006 ,  C09J2479/08 ,  C09J2479/086 ,  C09J2481/006 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/83801 ,  H01L2224/97 ,  H01L2924/09701 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  Y10T428/1471 ,  Y10T428/1476 ,  Y10T428/28 ,  H01L2224/85 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An adhesive film for semiconductor, which comprises at least one resin layer, and, after bonded to a lead frame, has at 25° C. a 90°-peel strength of at least 5 N/m between the resin layer and the lead frame, and, after a lead frame is bonded to the adhesive film for semiconductor and sealed with a sealing material, has at least at one point of temperatures ranging from 0 to 250° C. a 90°-peel strength of at most 1000 N/m between the resin layer and each of the lead frame and the sealing material; a lead frame and a semiconductor device using the adhesive film for semiconductor; and a method of producing a semiconductor device.

摘要翻译： 一种用于半导体的粘合膜，其包括至少一个树脂层，并且在引线框架结合之后具有25℃，树脂层和引线框架之间的90°剥离强度为至少5N / m 并且在将引线框架结合到用于半导体的粘合剂膜并用密封材料密封之后，至少在0-250℃的温度的一个点处，90°的强度为至多1000N / 树脂层和引线框架和密封材料中的每一个之间; 引线框架和使用半导体用粘合膜的半导体器件; 以及半导体器件的制造方法。

公开(公告)号：US07449367B2

公开(公告)日：2008-11-11

申请号：US10519713

申请日：2004-02-19

申请人： Hidekazu Matsuura ,  Toshiyasu Kawai

发明人： Hidekazu Matsuura ,  Toshiyasu Kawai

IPC分类号： H01L21/00

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3107 ,  H01L24/97 ,  H01L2221/68309 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/181 ,  Y10T428/2839 ,  Y10T428/31678 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012

摘要： An adhesive film for semiconductor use of the present invention is used in a method in which, after the adhesive film for semiconductor use is laminated to one side of a metal sheet, the metal sheet is processed to give a wiring circuit, a semiconductor die is mounted and molded, and the adhesive film is then peeled off. The adhesive film includes a resin layer A formed on one side or both sides of a support film, the 90 degree peel strength between the resin layer A and the metal sheet prior to the processing of the metal sheet laminated with the adhesive film for semiconductor use to give the wiring circuit is 20 N/m or greater at 25° C., and the 90 degree peel strengths, after molding with a molding compound the wiring circuit laminated with the adhesive film for semiconductor use, between the resin layer A and the wiring circuit and between the resin layer A and the molding compound are both 1000 N/m or less at at least one point in the temperature range of 0° C. to 250° C.

摘要翻译： 本发明的半导体用粘合膜用于将半导体用粘合膜层叠在金属板的一面之后，对该金属板进行加工而形成布线电路，半导体管芯为 安装和模制，然后将粘合剂膜剥离。 粘合膜包括在支撑膜的一侧或两侧形成的树脂层A，在与用于半导体用途的粘合膜层压的金属片处理之前树脂层A和金属片之间的90度剥离强度 为了使布线电路在25℃下为20N / m以上，在90度剥离强度下，在树脂层A和 布线电路和树脂层A与模塑料之间在0℃至250℃的温度范围内的至少一个点处均为1000N / m以下。

公开(公告)号：US5998020A

公开(公告)日：1999-12-07

申请号：US844430

申请日：1997-04-18

申请人： Hidekazu Matsuura ,  Yoshihiro Nomura

发明人： Hidekazu Matsuura ,  Yoshihiro Nomura

IPC分类号： C09J7/02 ,  H01L23/495 ,  B32B7/12

CPC分类号： H01L23/4951 ,  C09J7/0282 ,  C09J2433/006 ,  C09J2471/006 ,  C09J2477/00 ,  C09J2479/086 ,  C09J2481/006 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T156/107 ,  Y10T428/269 ,  Y10T428/28 ,  Y10T428/2813

摘要： A composite film, comprising a base film and an adhesive layer on one or both sides of the base film, the composite film having a thickness of T (.mu.m), the base film having an edge tearing strength of R (kg/20mm), the adhesive layer having a total thickness of A, the base film having a thickness of B, T being related to R by a numerical formula R>0.6T-8 when T.ltoreq.60, or by a numerical formula R.gtoreq.28 when T>60, and A/B being 0.5 to 1.4.

摘要翻译： 一种复合膜，其在基膜的一侧或两面上具有基膜和粘合剂层，复合膜的厚度为T（μm），基膜的边缘撕裂强度为R（kg / 20mm） ，当T <= 60时，具有总厚度为A的粘合剂层，底膜具有B，T与R相关的数值公式R> 0.6T-8，或数值式R> / = 28，当T> 60，A / B为0.5〜1.4时。

公开(公告)号：US5958653A

公开(公告)日：1999-09-28

申请号：US888019

申请日：1997-07-03

申请人： Hidekazu Matsuura ,  Yoshihide Iwazaki

发明人： Hidekazu Matsuura ,  Yoshihide Iwazaki

IPC分类号： H01L23/495 ,  G03C5/00

CPC分类号： H01L23/4951 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10S438/948

摘要： A method of forming a resin film pattern, comprising the steps of (A) producing a resin film layer soluble in an organic solvent, on a substrate such as silicon wafer, even engineering plastics being usable as a resin of the resin film layer; (B) forming a resist image of desired pattern on the organic solvent-soluble resin film layer; (C) etching each of those parts of the organic solvent-soluble resin film layer which are not covered with the resist image, using the organic solvent; and (D) removing the resist image from the resulting, organic solvent-soluble resin film layer using a resist image remover which contains 0.01-10.0 parts-by-weight of arylsulfonic acid with respect to 100 parts-by-weight of solvent having a solubility parameter of 5.0-11.0. The step (D) may well be followed by the step (E) of processing the substrate which includes the resin film layer, with alcohol.

摘要翻译： 一种形成树脂膜图案的方法，包括以下步骤：（A）制备可溶于有机溶剂的树脂膜层，在诸如硅晶片的基板上，甚至可用作树脂膜层的树脂的工程塑料; （B）在有机溶剂可溶性树脂膜层上形成所需图案的抗蚀图像; （C）使用有机溶剂对没有被抗蚀剂图像覆盖的有机溶剂可溶性树脂膜层的各部分进行蚀刻; 和（D）使用抗蚀剂图像去除剂从所得到的有机溶剂可溶性树脂膜层中除去抗蚀剂图像，该抗蚀剂图像去除剂相对于100重量份的溶剂含有0.01-10.0重量份的芳基磺酸，其具有 溶解度参数5.0-11.0。 步骤（D）可以很好地遵循用醇处理包括树脂膜层的基板的步骤（E）。