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    ANISOTROPIC FILM AND METHOD OF MANUFACTURING ANISOTROPIC FILM
    6.
    发明申请
    ANISOTROPIC FILM AND METHOD OF MANUFACTURING ANISOTROPIC FILM 审中-公开
    ANISOTROPIC膜和制造ANISOTROPIC膜的方法

    公开(公告)号：US20090061170A1

    公开(公告)日：2009-03-05

    申请号：US12199569

    申请日：2008-08-27

    申请人： Shigenori Fujikawa ,  Wakana Kubo ,  Toyoki Kunitake ,  Hideo Hada ,  Sanae Furuya

    发明人： Shigenori Fujikawa ,  Wakana Kubo ,  Toyoki Kunitake ,  Hideo Hada ,  Sanae Furuya

    IPC分类号： B32B3/10 ,  B05D5/00 ,  B05D3/00 ,  B05D3/10 ,  H05H1/24

    CPC分类号： H05K3/4038 ,  H01L23/4985 ,  H01L2924/0002 ,  H01R43/007 ,  H05K2201/10378 ,  H05K2203/0338 ,  Y10T428/24802 ,  H01L2924/00

    摘要： An anisotropic film is disclosed in which a line-shaped nanostructure is disposed inside a resin film. Also disclosed is a method of producing an anisotropic film that includes: forming a metal nanostructure on a substrate, forming a resin film that embeds the metal nanostructure, and detaching the resin film from the substrate, wherein the step of forming the metal nanostructure on the substrate includes: at least, forming a coating film on the surface of a template provided on the substrate, the coating film including a metal layer formed by electroless plating; and removing a portion or all of the template while retaining a portion or all of the coating film, or removing a portion of the coating film. Also disclosed is an anisotropic film produced using the method of producing an anisotropic film.

    摘要翻译： 公开了在树脂膜内设置线状纳米结构的各向异性膜。 还公开了一种制造各向异性膜的方法，其包括：在基板上形成金属纳米结构体，形成嵌入金属纳米结构体的树脂膜，以及从基板剥离树脂膜，其中，将形成金属纳米结构的工序 基板包括：至少在设置在基板上的模板的表面上形成涂膜，所述涂膜包括通过无电镀形成的金属层; 并且在保留一部分或全部涂膜的同时除去部分或全部模板，或者去除涂膜的一部分。 还公开了使用各向异性膜的制造方法制造的各向异性膜。

    METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE
    7.
    发明申请
    METHOD FOR MANUFACTURING STRUCTURE, AND STRUCTURE 失效
    制造结构和结构的方法

    公开(公告)号：US20090087625A1

    公开(公告)日：2009-04-02

    申请号：US12202972

    申请日：2008-09-02

    申请人： Shigenori Fujikawa ,  Toyoki Kunitake ,  Hiromi Takemoto ,  Mari Koizumi ,  Hideo Hada ,  Sanae Furuya

    发明人： Shigenori Fujikawa ,  Toyoki Kunitake ,  Hiromi Takemoto ,  Mari Koizumi ,  Hideo Hada ,  Sanae Furuya

    IPC分类号： B32B3/10 ,  B05D1/36

    CPC分类号： B81C1/00111 ,  Y10S977/70 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/892 ,  Y10T428/24802

    摘要： A method of producing a structure, including: a composite film formation step that forms a composite film composed of a coating film and an organic film or inorganic film on top of a substrate by conducting Steps (1) to (3) below: (1) forming the coating film composed of a metal layer or a metal oxide layer on the surface of a template provided on top of the substrate, (2) forming the organic film or inorganic film on the surface of the coating film, and (3) removing a portion of the organic film or inorganic film and the coating film; a second coating film formation step that forms a second coating film composed of a metal layer or a metal oxide layer on the surface of the composite film; a coating step that, following formation of the second coating film, forms an organic coating film on the substrate that covers the surface of the substrate; a removal step that removes a portion of the second coating film, the side surfaces of which are at least partially supported by the organic coating film; and a structure formation step that forms a structure composed of a metal layer or metal oxide layer on the substrate by removing all residues left on the substrate except for the coating film and the second coating film.

    摘要翻译： 一种制造结构的方法，包括：通过进行下述步骤（1）至（3），在基板的顶部上形成由涂膜和有机膜或无机膜构成的复合膜的复合膜形成步骤：（1 ），在设置在基板顶部的模板表面上形成由金属层或金属氧化物层构成的涂膜，（2）在涂膜的表面形成有机膜或无机膜，（3） 去除一部分有机膜或无机膜和涂膜; 第二涂膜形成步骤，在复合膜的表面上形成由金属层或金属氧化物层构成的第二涂膜; 涂覆步骤，在形成第二涂膜之后，在覆盖基材表面的基材上形成有机涂膜; 去除步骤，其去除第二涂膜的一部分，其侧表面至少部分地由有机涂膜支撑; 以及结构形成步骤，通过去除除了涂膜和第二涂膜之外的残留在基板上的残留物，在基板上形成由金属层或金属氧化物层构成的结构。

    Method for manufacturing a structure
    8.
    发明授权
    Method for manufacturing a structure 失效
    制造结构的方法

    公开(公告)号：US08025923B2

    公开(公告)日：2011-09-27

    申请号：US12202972

    申请日：2008-09-02

    申请人： Shigenori Fujikawa ,  Toyoki Kunitake ,  Hiromi Takaemoto ,  Mari Koizumi ,  Hideo Hada ,  Sanae Furuya

    发明人： Shigenori Fujikawa ,  Toyoki Kunitake ,  Hiromi Takaemoto ,  Mari Koizumi ,  Hideo Hada ,  Sanae Furuya

    IPC分类号： B05D1/32

    CPC分类号： B81C1/00111 ,  Y10S977/70 ,  Y10S977/84 ,  Y10S977/89 ,  Y10S977/892 ,  Y10T428/24802

    摘要： A method of manufacturing a structure, including forming a composite film composed of a coating film and an organic or inorganic film on top of a substrate by forming the coating film on the surface of a template provided on top of the substrate; forming the organic or inorganic film on the surface of the coating film, and removing a portion of the organic or inorganic film and a portion of the coating film; forming a second coating film on the surface of the composite film; forming an organic coating film on the substrate that covers the second coating film; removing a portion of the second coating film; and forming a structure composed of a metal or metal oxide later on the substrate by removing all residues left on the substrate except for the coating film and the second coating film.

    摘要翻译： 一种结构的制造方法，其特征在于，在基板顶部的模板表面上形成涂膜，在基板顶部形成由涂膜和有机或无机膜构成的复合膜; 在涂膜表面上形成有机或无机膜，除去一部分有机或无机膜和一部分涂膜; 在复合膜的表面上形成第二涂膜; 在覆盖第二涂膜的基板上形成有机涂膜; 去除所述第二涂膜的一部分; 并且通过除去除了涂膜和第二涂膜之外残留在基板上的所有残留物，在基板上形成由金属或金属氧化物组成的结构。

    FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN
    9.
    发明申请
    FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN 有权
    成膜材料和形成图案的方法

    公开(公告)号：US20090134119A1

    公开(公告)日：2009-05-28

    申请号：US11997300

    申请日：2006-08-24

    申请人： Shogo Matsumaru ,  Hideo Hada ,  Fujikawa Shigenori ,  Toyoki Kunitake

    发明人： Shogo Matsumaru ,  Hideo Hada ,  Fujikawa Shigenori ,  Toyoki Kunitake

    IPC分类号： C23F1/02

    CPC分类号： H01L21/0273 ,  C09D183/04 ,  G03F7/0755 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/31144

    摘要： A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.

    摘要翻译： 能够在低温下形成相对于有机膜具有高耐蚀刻性和高蚀刻选择比的膜的成膜材料以及形成使用该膜的图案的方法 形成材料。 成膜材料包括水解时能够产生羟基的金属化合物（W）和其中溶解有金属化合物的溶剂（S），其中溶剂（S）包括沸腾的溶剂（S1） 至少155℃，不含与金属化合物（W）反应的官能团。 形成图案的方法包括以下步骤：使用上述成膜材料涂覆已经形成在包括基材和有机膜的层压体的有机膜的顶部上的图案，然后进行蚀刻 使用该图案作为掩模的有机膜。

    Film-forming material and method of forming pattern
    10.
    发明授权
    Film-forming material and method of forming pattern 有权
    成膜材料及其形成方法

    公开(公告)号：US08101013B2

    公开(公告)日：2012-01-24

    申请号：US11997300

    申请日：2006-08-24

    申请人： Shogo MatsuMaru ,  Hideo Hada ,  Shingenori Fujikawa ,  Toyoki Kunitake

    发明人： Shogo MatsuMaru ,  Hideo Hada ,  Shingenori Fujikawa ,  Toyoki Kunitake

    IPC分类号： C09D5/00 ,  C09K13/00

    CPC分类号： H01L21/0273 ,  C09D183/04 ,  G03F7/0755 ,  G03F7/40 ,  H01L21/31138 ,  H01L21/31144

    摘要： A film-forming material that is capable of forming, at a low temperature, a film having a high degree of etching resistance and a high etching selectivity ratio relative to an organic film, as well as a method of forming a pattern that uses the film-forming material. The film-forming material includes a metal compound (W) capable of generating a hydroxyl group upon hydrolysis, and a solvent (S) in which the metal compound is dissolved, wherein the solvent (S) includes a solvent (S1) with a boiling point of at least 155° C. that contains no functional groups that react with the metal compound (W). The method of forming a pattern includes the steps of: coating a pattern, which has been formed on top of an organic film of a laminate that includes a substrate and the organic film, using the above film-forming material, and then conducting etching of the organic film using the pattern as a mask.

    摘要翻译： 能够在低温下形成相对于有机膜具有高耐蚀刻性和高蚀刻选择比的膜的成膜材料以及形成使用该膜的图案的方法 形成材料。 成膜材料包括水解时能够产生羟基的金属化合物（W）和其中溶解有金属化合物的溶剂（S），其中溶剂（S）包括沸腾的溶剂（S1） 至少155℃，不含与金属化合物（W）反应的官能团。 形成图案的方法包括以下步骤：使用上述成膜材料涂覆已经形成在包括基材和有机膜的层压体的有机膜的顶部上的图案，然后进行蚀刻 使用该图案作为掩模的有机膜。