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公开(公告)号：US20090176015A1
公开(公告)日：2009-07-09
申请号：US12347187
申请日：2008-12-31
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译： 本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。 此外，本发明还提供了通过该方法形成的抗反射结构。 在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。 基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。 基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。 也可以通过使用压模的纳米压印方法制造抗反射结构。 通过使用根据上述形成方法制造的母版形成压模。
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公开(公告)号：US20130135746A1
公开(公告)日：2013-05-30
申请号：US13723374
申请日：2012-12-21
申请人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino
发明人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino
IPC分类号： G02B1/11
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
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公开(公告)号：US08840258B2
公开(公告)日：2014-09-23
申请号：US13723374
申请日：2012-12-21
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译： 本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。 此外，本发明还提供了通过该方法形成的抗反射结构。 在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。 基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。 基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。 也可以通过使用压模的纳米压印方法制造抗反射结构。 通过使用根据上述形成方法制造的母版形成压模。
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公开(公告)号：US08361339B2
公开(公告)日：2013-01-29
申请号：US12347187
申请日：2008-12-31
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译： 本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。 此外，本发明还提供了通过该方法形成的抗反射结构。 在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。 基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。 基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。 也可以通过使用压模的纳米压印方法制造抗反射结构。 通过使用根据上述形成方法制造的母版形成压模。
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公开(公告)号：US07029823B2
公开(公告)日：2006-04-18
申请号：US10937357
申请日：2004-09-10
申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
发明人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要翻译： 根据本发明，提供了具有特定含桥连键的脂肪族环的结构的抗蚀剂树脂和包含该抗蚀剂树脂的抗蚀剂组合物。 通过使用该抗蚀剂组合物，可以通过高分辨率的碱显影形成对短波长光的透明性和耐干蚀刻性优异的抗蚀剂图案。
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6.发明授权Resin useful for resist, resist composition and pattern forming process using the same 有权可用于抗蚀剂，抗蚀剂组合物和使用其的图案形成方法的树脂公开(公告)号：US06824957B2
公开(公告)日：2004-11-30
申请号：US10635571
申请日：2003-08-07
申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
发明人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
IPC分类号： G03F720
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要翻译： 根据本发明，提供了具有特定含桥连键的脂肪族环的结构的抗蚀剂树脂和包含该抗蚀剂树脂的抗蚀剂组合物。 通过使用该抗蚀剂组合物，可以通过高分辨率的碱显影形成对短波长光的透明性和耐干蚀刻性优异的抗蚀剂图案。
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公开(公告)号：US5932391A
公开(公告)日：1999-08-03
申请号：US697009
申请日：1996-08-16
申请人： Toru Ushirogouchi , Koji Asakawa , Naoko Kihara , Makoto Nakase , Naomi Shida , Takeshi Okino
发明人： Toru Ushirogouchi , Koji Asakawa , Naoko Kihara , Makoto Nakase , Naomi Shida , Takeshi Okino
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A resist for alkali development, which comprises an alicyclic compound attached with an acidic substituent group exhibiting pKa of 7 to 11 in an aqueous solution of 25.degree. C. This alicyclic compound is preferably a copolymer comprising as a comonomer component a vinyl compound and exhibiting a light absorbency of 3 or less per 1 .mu.m to the light of 193 nm in wavelength.
摘要翻译： 一种碱显影用抗蚀剂，其包含在25℃的水溶液中具有表现出pKa为7〜11的酸性取代基的脂环族化合物。该脂环族化合物优选为包含乙烯基化合物作为共聚单体成分的共聚物， 对于波长为193nm的光，每1μm的光吸收率为3以下。
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公开(公告)号：US20050037284A1
公开(公告)日：2005-02-17
申请号：US10937357
申请日：2004-09-10
申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
发明人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要翻译： 根据本发明，提供了具有特定含桥连键的脂肪族环的结构的抗蚀剂树脂和包含该抗蚀剂树脂的抗蚀剂组合物。 通过使用该抗蚀剂组合物，可以通过高分辨率的碱显影形成对短波长光的透明性和耐干蚀刻性优异的抗蚀剂图案。
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公开(公告)号：US06410748B1
公开(公告)日：2002-06-25
申请号：US09847387
申请日：2001-05-03
申请人： Naomi Shida , Toru Ushirogouchi , Koji Asakawa , Takeshi Okino , Shuji Hayase , Yoshihiko Nakano , Makoto Nakase
发明人： Naomi Shida , Toru Ushirogouchi , Koji Asakawa , Takeshi Okino , Shuji Hayase , Yoshihiko Nakano , Makoto Nakase
IPC分类号： C07D20948
CPC分类号： G03F7/0397 , C08F246/00 , G03F7/0045 , G03F7/039 , G03F7/0758 , Y10S430/106 , Y10S430/107 , Y10S430/108 , Y10S430/111 , Y10S430/115
摘要： A monomer represented by the following general formula (m-1): wherein R is a group having an alicyclic skeleton, R2s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group, X1 is a bivalent organic group containing a heteroatom, j is an integer of 0 to 3, and R1 is a group selected from the following groups, a monovalent organic group having Si (R1-1), and —(X2)k—R4—(X3)m—C(R6)3 (R1-2), wherein X2 and X3 are a bivalent organic group containing a heteroatom, k and m are an integer of 0 to 3, R4 is a bivalent alkyl group, R6s may be the same or different and are individually hydrogen atom, halogen atom or monovalent organic group.
摘要翻译： 由以下通式（m-1）表示的单体：其中R是具有脂环骨架的基团，R 2可以相同或不同，分别为氢原子，卤素原子或一价有机基团，X 1为二价有机基团 含有杂原子，j为0〜3的整数，R1为选自下列基团的基团，具有Si（R1-1）的一价有机基团，X2和X3中的任一个为含有杂原子的二价有机基团，k m为0〜3的整数，R4为二价烷基，R6可以相同或不同，分别为氢原子，卤素原子或一价有机基团。
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公开(公告)号：US07070905B2
公开(公告)日：2006-07-04
申请号：US10937577
申请日：2004-09-10
申请人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
发明人： Takeshi Okino , Koji Asakawa , Naomi Shida , Toru Ushirogouchi , Satoshi Saito
CPC分类号： G03F7/0382 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
摘要翻译： 根据本发明，提供了具有特定含桥连键的脂肪族环的结构的抗蚀剂树脂和包含该抗蚀剂树脂的抗蚀剂组合物。 通过使用该抗蚀剂组合物，可以通过高分辨率的碱显影形成对短波长光的透明性和耐干蚀刻性优异的抗蚀剂图案。
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