Cover mounting structure for shelf assembly
    2.
    发明授权
    Cover mounting structure for shelf assembly 失效
    货架组合盖安装结构

    公开(公告)号:US5711587A

    公开(公告)日:1998-01-27

    申请号:US568383

    申请日:1995-12-06

    CPC分类号: H05K7/14 E05C1/14 H02B1/06

    摘要: A cover mounting structure for a shelf assembly which allows easy mounting of a cover to a shelf and can reliably prevent falling of the cover even when the cover is unlocked. The shelf assembly includes a shelf having a pair of side plates and a plurality of electronic circuit packages mounted in the shelf. The cover mounting structure includes a cover having a front plate, a pair of side plates bent from the front plate at a substantially right angle thereto, and a top plate bent from the front plate at a predetermined angle thereto; and a pair of shafts fixed in the vicinity of the upper ends of the side plates of the cover so as to project inside of the cover. A pair of recesses for receiving the shafts are formed at the upper ends of the side plates of the shelf, and a pair of guiding slant surfaces for guiding reception of the shafts into the recesses are formed at the front edges of the upper ends of the side plates of the shelf. The shafts are engaged with the recesses to thereby mount the cover on the shelf assembly.

    摘要翻译: 一种用于搁板组件的盖安装结构,其允许容易地将盖安装到搁板上,并且即使在盖被解锁时也可以可靠地防止盖的掉落。 搁架组件包括具有一对侧板和安装在搁板中的多个电子电路封装的搁板。 盖安装结构包括:盖,其具有前板,从前板以大致直角弯曲的一对侧板和从前板以预定角度弯曲的顶板; 以及固定在盖的侧板的上端附近的一对轴,以便在盖的内部突出。 在搁架的侧板的上端形成有用于容纳轴的一对凹部,并且在该上部的前端部的前端形成有用于将轴引导到凹部中的一对导向倾斜面 搁板的侧板。 轴与凹部接合,从而将盖安装在搁架组件上。

    Heat pipe connector and electronic apparatus and radiating fins having
such connector
    3.
    发明授权
    Heat pipe connector and electronic apparatus and radiating fins having such connector 失效
    热管连接器和具有这种连接器的电子设备和散热片

    公开(公告)号:US5398748A

    公开(公告)日:1995-03-21

    申请号:US141690

    申请日:1993-10-26

    摘要: A heat pipe connector includes a housing having a hole shaped like a quadrangular pyramid with a large opening and a small opening. A plurality of clamp pieces are combined into a body that can be fitted into the hole shaped like a quadrangular pyramid. A heat pipe insertion opening, into which a heat pipe is inserted, is formed in the center of the combined pieces. Springs energize each clamp piece toward the small opening of the hole shaped like a quadrangular pyramid. The heat pipe is inserted into the heat pipe insertion opening from the side of the small opening of the housing hole shaped like a quadrangular pyramid. It is configured such that a spring force; of the springs as well as lateral surfaces of the hole shaped like a quadrangular pyramid apply a force to the clamp pieces to clamp the heat pipe.

    摘要翻译: 热管连接器包括具有形状为四边形金字塔的孔的壳体,其具有大的开口和小的开口。 多个夹具组合成可装配到四边形金字塔形状的孔中的主体。 在组合件的中心形成有插入有热管的热管插入口。 弹簧将每个夹紧件向朝向四边形金字塔形状的孔的小开口供电。 热管从容纳孔的小开口侧插入热管插入口,形状为四角锥。 它被构造成使得弹簧力; 的弹簧以及形状为四角锥的孔的侧表面向夹具施加力以夹紧热管。

    Heat radiation structure for semiconductor device
    4.
    发明授权
    Heat radiation structure for semiconductor device 失效
    半导体器件的散热结构

    公开(公告)号:US5262922A

    公开(公告)日:1993-11-16

    申请号:US842331

    申请日:1992-03-26

    IPC分类号: H01L23/40 H05K1/02 H05K7/20

    摘要: A heat radiation structure is provided for a semiconductor device, by which a mounting height of the semiconductor device can be lowered to increase an accommodation density in a shelf, and the mounting/dismounting is easily carried out. In a heat-radiation structure for a semiconductor device, in which a semiconductor device (2) is mounted on a printed circuit board (1) so that the bottom surface thereof confronts an opening (1a) formed in the printed circuit board, a heat-conductive member (3, 11) is brought into tight contact with the bottom surface of the semiconductor device and the opposite end surface of thereof is protruded through the opening (1a) from the back side of the printed circuit board while in tight contact with a heat-radiation plate (4) disposed at that position, so that heat generated from the semiconductor device is transmitted to the heat-radiation plate (4) via the heat-conductive member (3, 11) and radiated from the outer surface thereof into air. At least one of the semiconductor device (2) and the heat-radiation plate (4) is made of a magnetic substance so that the two members are brought into tight contact with the heat-conductive member by the attraction force of a permanent magnet (3, 10) disposed between the two members.

    摘要翻译: PCT No.PCT / JP91 / 01006 Sec。 371日期:1992年3月26日 102(e)1992年3月26日PCT PCT 1991年7月26日PCT公布。 出版物WO92 / 02117 日本1992年2月6日。为半导体器件提供散热结构,通过该辐射结构可以降低半导体器件的安装高度以增加搁板中的调节密度,并且容易进行安装/拆卸。 在半导体器件的散热结构中,其中将半导体器件(2)安装在印刷电路板(1)上,使得其底表面面对形成在印刷电路板中的开口(1a),热量 导电构件(3,11)与半导体器件的底表面紧密接触,并且其相对端表面从印刷电路板的背面突出穿过开口(1a),同时与 设置在该位置处的散热板(4),使得从半导体器件产生的热量经由导热部件(3,11)传递到散热板(4),并从其外表面辐射 进入空气 半导体器件(2)和散热板(4)中的至少一个由磁性物质制成,使得两个部件通过永磁体的吸引力与导热部件紧密接触( 3,10)设置在两个构件之间。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    5.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号:US20090215247A1

    公开(公告)日:2009-08-27

    申请号:US12434637

    申请日:2009-05-02

    IPC分类号: H01L21/304

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在扫描装置(1)的盖(8)的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 晶片通过照明装置(7a)和(7b)。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    6.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照,防止铝腐蚀

    公开(公告)号:US07998793B2

    公开(公告)日:2011-08-16

    申请号:US12434637

    申请日:2009-05-02

    IPC分类号: H01L21/00

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在切割装置(1)的盖(8)的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 晶片通过照明装置(7a)和(7b)。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    7.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号:US20080138962A1

    公开(公告)日:2008-06-12

    申请号:US11632993

    申请日:2004-07-22

    IPC分类号: H01L21/304

    摘要: Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译: 在切割装置(1)的盖(8)的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置(7a)和(7b)。 在将晶片放置在切割台(3)上之后,当通过安装在主轴(5)上的刀片(4a)切割晶片时,将光照射在上表面(元件形成表面)的整个表面上 通过照明装置(7a)和(7b)的晶片。 此时,晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式,在切割操作期间,晶片上不存在由主轴(5)等构成遮光区域的区域。

    Containment vessel and nuclear power plant

    公开(公告)号:US09818495B2

    公开(公告)日:2017-11-14

    申请号:US13988966

    申请日:2011-09-14

    申请人: Takashi Sato

    发明人: Takashi Sato

    摘要: A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit

    公开(公告)号:US09653994B2

    公开(公告)日:2017-05-16

    申请号:US13215035

    申请日:2011-08-22

    IPC分类号: G01R31/00 H02M3/158 H02M1/36

    CPC分类号: H02M3/158 H02M1/36

    摘要: A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.