摘要:
This invention relates to a subrack device applicable for an SDH network, and more particularly to a subrack device which can be produced flexibly in response to a customer's need. The subrack device has a subrack body commonly used regardless of a type of the subrack device. The subrack body has a circuit-board-unit housing portion and an outer-connecting-board mounting portion. Circuit boards and outer-connecting-board connecting-boards of different types are prepared. The outer-connecting-board mounting portion has a plurality of outer-connecting-board mounting territories. The outer-connecting-boards are plugged in the outer-connecting-board mounting territories to produce the subrack device meeting the customer's need.
摘要:
A cover mounting structure for a shelf assembly which allows easy mounting of a cover to a shelf and can reliably prevent falling of the cover even when the cover is unlocked. The shelf assembly includes a shelf having a pair of side plates and a plurality of electronic circuit packages mounted in the shelf. The cover mounting structure includes a cover having a front plate, a pair of side plates bent from the front plate at a substantially right angle thereto, and a top plate bent from the front plate at a predetermined angle thereto; and a pair of shafts fixed in the vicinity of the upper ends of the side plates of the cover so as to project inside of the cover. A pair of recesses for receiving the shafts are formed at the upper ends of the side plates of the shelf, and a pair of guiding slant surfaces for guiding reception of the shafts into the recesses are formed at the front edges of the upper ends of the side plates of the shelf. The shafts are engaged with the recesses to thereby mount the cover on the shelf assembly.
摘要:
A heat pipe connector includes a housing having a hole shaped like a quadrangular pyramid with a large opening and a small opening. A plurality of clamp pieces are combined into a body that can be fitted into the hole shaped like a quadrangular pyramid. A heat pipe insertion opening, into which a heat pipe is inserted, is formed in the center of the combined pieces. Springs energize each clamp piece toward the small opening of the hole shaped like a quadrangular pyramid. The heat pipe is inserted into the heat pipe insertion opening from the side of the small opening of the housing hole shaped like a quadrangular pyramid. It is configured such that a spring force; of the springs as well as lateral surfaces of the hole shaped like a quadrangular pyramid apply a force to the clamp pieces to clamp the heat pipe.
摘要:
A heat radiation structure is provided for a semiconductor device, by which a mounting height of the semiconductor device can be lowered to increase an accommodation density in a shelf, and the mounting/dismounting is easily carried out. In a heat-radiation structure for a semiconductor device, in which a semiconductor device (2) is mounted on a printed circuit board (1) so that the bottom surface thereof confronts an opening (1a) formed in the printed circuit board, a heat-conductive member (3, 11) is brought into tight contact with the bottom surface of the semiconductor device and the opposite end surface of thereof is protruded through the opening (1a) from the back side of the printed circuit board while in tight contact with a heat-radiation plate (4) disposed at that position, so that heat generated from the semiconductor device is transmitted to the heat-radiation plate (4) via the heat-conductive member (3, 11) and radiated from the outer surface thereof into air. At least one of the semiconductor device (2) and the heat-radiation plate (4) is made of a magnetic substance so that the two members are brought into tight contact with the heat-conductive member by the attraction force of a permanent magnet (3, 10) disposed between the two members.
摘要:
Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要:
Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要:
Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要:
A method for producing a fuel cell electrode catalyst, including a step (I) of bringing an aqueous solution of a transition metal compound (1) into contact with ammonia and/or ammonia water to generate a precipitate (A) containing an atom of the transition metal, a step (II) of mixing at least the precipitate (A), an organic compound (B), and a liquid medium (C) to obtain a catalyst precursor liquid, and a step (IV) of subjecting the solid in the catalyst precursor liquid to heat treatment at a temperature of 500 to 1200° C. to obtain an electrode catalyst; a portion or the entirety of the transition metal compound (1) being a compound containing a transition metal element of group 4 or group 5 of the periodic table; and the organic compound (B) being at least one selected from sugars and the like.
摘要:
A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.
摘要:
A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.