公开(公告)号：US08969819B2

公开(公告)日：2015-03-03

申请号：US13027328

申请日：2011-02-15

申请人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

发明人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

IPC分类号： G01T1/24 ,  H01L29/66 ,  H01L27/146 ,  G01T1/20 ,  H04N5/225 ,  H04N5/374 ,  H04N5/378

CPC分类号： H01L27/14676 ,  G01T1/2018 ,  H04N5/2251 ,  H04N5/374 ,  H04N5/378

摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.

摘要翻译： 允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。 放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动 通过像素晶体管，从而恢复像素晶体管的特性。

公开(公告)号：US20120299070A1

公开(公告)日：2012-11-29

申请号：US13474061

申请日：2012-05-17

申请人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito ,  Michiru Senda

发明人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito ,  Michiru Senda

IPC分类号： H01L31/0232 ,  H01L27/144 ,  H01L27/146

CPC分类号： H01L31/105 ,  H01L27/14663 ,  H01L31/02164

摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.

摘要翻译： 本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

公开(公告)号：US20120038018A1

公开(公告)日：2012-02-16

申请号：US13196096

申请日：2011-08-02

申请人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito

发明人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/0352 ,  H01L27/14607 ,  H01L27/14663 ,  H01L27/14692 ,  H01L31/105

摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

摘要翻译： 光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层 层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。 第三半导体层具有与第一半导体层不接触的至少一个角部。

公开(公告)号：US20110204246A1

公开(公告)日：2011-08-25

申请号：US13027328

申请日：2011-02-15

申请人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

发明人： Tsutomu Tanaka ,  Makoto Takatoku ,  Yasuhiro Yamada ,  Ryoichi Ito

IPC分类号： G01T1/24 ,  H01L29/04 ,  H01L27/146

CPC分类号： H01L27/14676 ,  G01T1/2018 ,  H04N5/2251 ,  H04N5/374 ,  H04N5/378

摘要： A radiation image pickup apparatus allowed to restore a change in characteristics in a pixel transistors caused by radiation, and a method of driving the same are provided. The radiation image pickup apparatus includes: a pixel section including a plurality of unit pixels and generating an electrical signal based on incident radiation, each of the unit pixels including one or more pixel transistors and a photoelectric conversion element; a drive section for selectively driving the unit pixels of the pixel section; and a characteristic restoring section including a first constant current source for annealing and a selector switch for changing a current path from the unit pixels to the first constant current source at the time of non-measurement of the radiation, and allowing an annealing current to flow through the pixel transistor, thereby restoring characteristics of the pixel transistor.

摘要翻译： 允许放射线摄像装置恢复由辐射引起的像素晶体管的特性变化，以及其驱动方法。 放射线图像拾取装置包括：像素部分，包括多个单位像素，并且基于入射辐射产生电信号，每个单位像素包括一个或多个像素晶体管和光电转换元件; 用于选择性地驱动像素部分的单位像素的驱动部分; 以及特征恢复部，其包括用于退火的第一恒流源和用于在不测量辐射时改变从单位像素到第一恒定电流源的电流路径的选择器开关，并且允许退火电流流动 通过像素晶体管，从而恢复像素晶体管的特性。

公开(公告)号：US09312421B2

公开(公告)日：2016-04-12

申请号：US13474061

申请日：2012-05-17

申请人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito ,  Michiru Senda

发明人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito ,  Michiru Senda

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L31/105 ,  H01L31/0216 ,  H01L27/146

CPC分类号： H01L31/105 ,  H01L27/14663 ,  H01L31/02164

摘要： Disclosed herein is a photoelectric conversion element including: a first semiconductor layer of a first conductivity type provided above a substrate; a second semiconductor layer of a second conductivity type provided in a higher layer than the first semiconductor layer; a third semiconductor layer of a third conductivity type provided between the first and second semiconductor layers and lower in electrical conductivity than the first and second semiconductor layers; and a light-shielding layer provided between the substrate and first semiconductor layer.

摘要翻译： 本文公开了一种光电转换元件，包括：设置在基板上方的第一导电类型的第一半导体层; 设置在比所述第一半导体层更高层的第二导电类型的第二半导体层; 第三导电类型的第三半导体层，设置在第一和第二半导体层之间，并且导电率低于第一和第二半导体层; 以及设置在所述基板和所述第一半导体层之间的遮光层。

公开(公告)号：US08952477B2

公开(公告)日：2015-02-10

申请号：US13196096

申请日：2011-08-02

申请人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito

发明人： Yasuhiro Yamada ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Ryoichi Ito

IPC分类号： H01L31/102 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/105

CPC分类号： H01L31/0352 ,  H01L27/14607 ,  H01L27/14663 ,  H01L27/14692 ,  H01L31/105

摘要： A photoelectric conversion element includes a first semiconductor layer that exhibits a first conductivity type and is provided in a selective area over a substrate, a second semiconductor layer that exhibits a second conductivity type and is disposed opposed to the first semiconductor layer, and a third semiconductor layer that is provided between the first and second semiconductor layers and exhibits a substantially intrinsic conductivity type. The third semiconductor layer has at least one corner part that is not in contact with the first semiconductor layer.

摘要翻译： 光电转换元件包括呈现第一导电类型并且设置在衬底上的选择区域中的第一半导体层，呈现第二导电类型并且与第一半导体层相对设置的第二半导体层，以及第三半导体层 层，其设置在第一和第二半导体层之间并且表现出基本上本征的导电类型。 第三半导体层具有与第一半导体层不接触的至少一个角部。

公开(公告)号：US20120313103A1

公开(公告)日：2012-12-13

申请号：US13485485

申请日：2012-05-31

申请人： Yasuhiro Yamada ,  Ryoichi Ito ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Michiru Senda

发明人： Yasuhiro Yamada ,  Ryoichi Ito ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Michiru Senda

IPC分类号： H01L31/0224 ,  H01L29/786

CPC分类号： H01L27/146 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14663 ,  H01L27/14676 ,  H01L29/7831 ,  H01L29/78633

摘要： Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.

摘要翻译： 本文公开了一种晶体管，包括：半导体层; 设置在所述半导体层的比表面侧的第一栅极绝缘膜和第一层间绝缘膜; 设置在所述第一栅极绝缘膜和所述第一层间绝缘膜之间的位置处的第一栅电极; 设置在所述半导体层的另一个表面侧的绝缘膜; 源电极和漏电极通过电连接到半导体层而提供; 以及屏蔽电极层，其设置成使得所述屏蔽电极层的至少一部分面对所述第一栅电极的边缘，其中所述第一栅极绝缘膜，所述第一层间绝缘膜和所述绝缘膜中的至少一个包括硅 氧化物膜。

公开(公告)号：US20110043471A1

公开(公告)日：2011-02-24

申请号：US12851766

申请日：2010-08-06

申请人： Michiru Senda ,  Yoshiharu Nakajima ,  Keiichiro Ishihara ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Masanobu Ikeda ,  Ryoichi Ito

发明人： Michiru Senda ,  Yoshiharu Nakajima ,  Keiichiro Ishihara ,  Tsutomu Tanaka ,  Makoto Takatoku ,  Masanobu Ikeda ,  Ryoichi Ito

IPC分类号： G06F3/041

CPC分类号： G06F3/0412 ,  G06F3/042 ,  G06F2203/04103

摘要： Touch sensor methods and apparatus are provided. A first photodiode includes an i-region of a first length. A second photodiode includes an i-region with a second length. A sensing component including a capacitive element is operably coupled to the first photodiode and the second photodiode. The first length of the i-region of the first photodiode is different than the second length of the i-region of the second photodiode.

摘要翻译： 提供触摸传感器的方法和设备。 第一光电二极管包括第一长度的i区域。 第二光电二极管包括具有第二长度的i区。 包括电容元件的感测部件可操作地耦合到第一光电二极管和第二光电二极管。 第一光电二极管的i区域的第一长度不同于第二光电二极管的i区域的第二长度。

公开(公告)号：US20120248318A1

公开(公告)日：2012-10-04

申请号：US13424739

申请日：2012-03-20

申请人： Ryoichi Ito ,  Tsutomu Tanaka ,  Yasuhiro Yamada

发明人： Ryoichi Ito ,  Tsutomu Tanaka ,  Yasuhiro Yamada

IPC分类号： G01T1/20

CPC分类号： G01T1/24 ,  G01T1/244

摘要： A radiographic image-pickup device includes: a photoelectric conversion layer; a wavelength conversion layer provided on the photoelectric conversion layer and converting a wavelength of radiation into a wavelength within a sensitivity band of the photoelectric conversion layer; and a low-refractive-index layer provided between the photoelectric conversion layer and the wavelength conversion layer, and having a refractive index lower than a refractive index of each of the photoelectric conversion layer and the wavelength conversion layer.

摘要翻译： 放射线照相图像拾取装置包括：光电转换层; 设置在光电转换层上并将辐射波长转换成光电转换层的灵敏度带内的波长的波长转换层; 以及设置在所述光电转换层和所述波长转换层之间并且具有低于所述光电转换层和所述波长转换层的折射率的折射率的低折射率层。

公开(公告)号：US20090159893A1

公开(公告)日：2009-06-25

申请号：US12331159

申请日：2008-12-09

申请人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

发明人： Natsuki Otani ,  Tsutomu Tanaka ,  Masafumi Kunii ,  Masanobu Ikeda ,  Ryoichi Ito

IPC分类号： H01L31/0368 ,  H01L31/12

CPC分类号： H01L31/153 ,  G02F2201/58 ,  H01L27/14632 ,  H01L31/112

摘要： A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.

摘要翻译： 光接收元件包括：第一导电型半导体区域，被配置为形成在元件形成表面上; 构造成形成在所述元件形成表面上的第二导电型半导体区域; 中间半导体区域，被配置为形成在第一导电型半导体区域和第二导电型半导体区域之间的元件形成表面之上，并且具有低于第一导电类型半导体区域的杂质浓度的杂质浓度 和第二导电型半导体区域。 光接收元件还包括：第一电极，被配置为电连接到第一导电型半导体区域; 第二电极，其被配置为电连接到所述第二导电型半导体区域; 以及控制电极，其被配置为形成在存在于所述元件形成表面上的相对区域中。