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    Method of manufacturing semiconductor device
    2.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06849484B2

    公开(公告)日：2005-02-01

    申请号：US10435046

    申请日：2003-05-12

    申请人： Takashi Terada ,  Motoi Ashida ,  Tomohiro Hosokawa ,  Yasuichi Masuda

    发明人： Takashi Terada ,  Motoi Ashida ,  Tomohiro Hosokawa ,  Yasuichi Masuda

    IPC分类号： H01L21/28 ,  H01L21/00 ,  H01L21/338 ,  H01L21/4763 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8244 ,  H01L27/088 ,  H01L27/11

    CPC分类号： H01L21/76897 ,  H01L21/76895

    摘要： As an opening exposing a surface of an element-forming region positioned in a region lying between two gate electrodes, a first opening is formed based on a resist pattern formed such that a portion of a region where the opening is formed overlaps two-dimensionally with a portion of one gate electrode. As an opening exposing a surface of one gate electrode, a second opening is formed based on a resist pattern formed such that a region where the opening is formed overlaps two-dimensionally solely with one gate electrode. Here, the first opening is covered with a non-photosensitive, organic film and the resist pattern. Thereafter, a tungsten interconnection is formed in the first and second openings. Thus, a semiconductor device, of which production cost is reduced, and in which electrical short-circuit and falling off of an interconnection are suppressed, can be obtained.

    摘要翻译： 作为露出位于两个栅极之间的区域中的元件形成区域的表面的开口，基于抗蚀剂图案形成第一开口，该抗蚀剂图案形成为使得形成开口的区域的一部分与二维地重叠二维地与 一个栅电极的一部分。 作为露出一个栅电极的表面的开口，基于形成为使得形成开口的区域仅用一个栅电极二维重叠的区域形成第二开口。 这里，第一开口被非光敏有机膜和抗蚀剂图案覆盖。 此后，在第一和第二开口中形成钨互连。 因此，可以获得抑制生产成本降低并且互连的电短路和掉电的半导体器件。

    Static semiconductor memory device
    3.
    发明授权
    Static semiconductor memory device 失效
    静态半导体存储器件

    公开(公告)号：US06812534B2

    公开(公告)日：2004-11-02

    申请号：US10365503

    申请日：2003-02-13

    申请人： Yoshiyuki Ishigaki ,  Tomohiro Hosokawa ,  Yukio Maki

    发明人： Yoshiyuki Ishigaki ,  Tomohiro Hosokawa ,  Yukio Maki

    IPC分类号： H01L29772

    CPC分类号： H01L27/11 ,  H01L27/1104 ,  Y10S257/903

    摘要： An SRAM comprises a memory cell including first and second access nMOS transistors, first and second driver nMOS transistors and first and second load pMOS transistors, polysilicon wires forming gates of the first and second access nMOS transistors and polysilicon wires extending in the same direction as the polysilicon wires for forming gates of the first and second driver nMOS transistors and gates of the first and second load pMOS transistors. The gate widths of the first and second access nMOS transistors and those of the first and second driver nMOS transistors are equalized with each other.

    摘要翻译： SRAM包括存储单元，其包括第一和第二存取nMOS晶体管，第一和第二驱动器nMOS晶体管以及第一和第二负载pMOS晶体管，形成第一和第二存取nMOS晶体管的栅极的多晶硅线以及与 用于形成第一和第二驱动器nMOS晶体管的栅极和第一和第二负载pMOS晶体管的栅极的多晶硅导线。 第一和第二存取nMOS晶体管的栅极宽度以及第一和第二驱动器nMOS晶体管的栅极宽度相互均衡。

    Method of manufacturing semiconductor device and system for manufacturing the same
    6.
    发明授权
    Method of manufacturing semiconductor device and system for manufacturing the same 失效
    制造半导体器件的方法及其制造方法

    公开(公告)号：US06756241B2

    公开(公告)日：2004-06-29

    申请号：US10026551

    申请日：2001-12-27

    申请人： Tomohiro Hosokawa ,  Satoshi Shimizu

    发明人： Tomohiro Hosokawa ,  Satoshi Shimizu

    IPC分类号： H01L2100

    CPC分类号： H01L21/67253 ,  H01L21/67155 ,  H01L22/20 ,  Y10T29/41

    摘要： A manufacturing method of a semiconductor device to perform processing, including pre-processing and post-processing, on a semiconductor substrate, a characteristic of the processed semiconductor substrate is inspected, whether the semiconductor substrate complies with a predetermined standard is judged, and a semiconductor substrate not complying with the standard is re-processed so that the semiconductor substrate complies with the standard.

    摘要翻译： 检查在半导体基板上进行包括预处理和后处理的处理的半导体器件的制造方法，判断半导体衬底是否符合预定标准，并且半导体 不符合标准的衬底被重新处理，使得半导体衬底符合标准。

    Impact-driven rotating device
    7.
    发明授权
    Impact-driven rotating device 有权
    冲击驱动旋转装置

    公开(公告)号：US06371218B1

    公开(公告)日：2002-04-16

    申请号：US09590384

    申请日：2000-06-09

    申请人： Masayuki Amano ,  Tomohiro Hosokawa ,  Minoru Yoshida ,  Hidenori Shimizu

    发明人： Masayuki Amano ,  Tomohiro Hosokawa ,  Minoru Yoshida ,  Hidenori Shimizu

    IPC分类号： B25B2314

    CPC分类号： B25B23/1475 ,  B25B23/1405

    摘要： An impact-driven rotating device includes an output shaft, a hammer for rotating the output shaft by imparting an impact to the output shaft, a rotation driver for rotating the hammer, an impact detector for detecting the impact imparted by the hammer, a rotation angle detector for detecting a rotation angle of the output shaft, a rotation speed detector for detecting a rotation speed of the output shaft from the rotation angle detected by the rotation angle detector, an energy calculator for calculating energy imparted to the output shaft from the rotation speed detected by the rotation speed detector, a between-impacts rotation angle calculator for calculating a rotation angle of the output shaft rotated from when the impact detector detected the impact to when the impact detector detects an subsequent impact from the rotation angle detected by the rotation angle detector, a tightening torque calculator for calculating a tightening torque by dividing the energy calculated by the energy calculator by the rotation angle calculated by the between-impacts rotation angle calculator, and a controller for stopping the rotation driver when the tightening torque calculated by the tightening torque calculator becomes equal to or exceeds a predetermined torque.

    摘要翻译： 冲击驱动旋转装置包括输出轴，用于通过对输出轴施加冲击来旋转输出轴的锤，用于旋转锤的旋转驱动器，用于检测由锤施加的冲击的冲击检测器，旋转角度 检测器，用于检测输出轴的旋转角度;旋转速度检测器，用于根据由旋转角度检测器检测的旋转角度检测输出轴的转速;能量计算器，用于计算从转速 由旋转速度检测器检测的冲击旋转角度计算器，用于计算从冲击检测器检测到冲击时旋转的输出轴的旋转角度，当冲击检测器检测到由旋转角度检测到的旋转角度后的冲击时 检测器，一个紧固力矩计算器，用于通过将由能量计算的能量除以来计算紧固扭矩 通过由冲击旋转角度计算器计算出的旋转角度，以及当由紧固扭矩计算器计算的紧固扭矩变得等于或超过预定扭矩时用于停止旋转驾驶员的控制器。