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    SILSESQUIOXANE RESIN, POSITIVE RESIST COMPOSITION, RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN
    1.
    发明申请
    SILSESQUIOXANE RESIN, POSITIVE RESIST COMPOSITION, RESIST LAMINATE, AND METHOD OF FORMING RESIST PATTERN 审中-公开
    SILSESQUIOXANE树脂，积极抵抗组合物，耐腐蚀层压材料和形成耐力图案的方法

    公开(公告)号：US20090068586A1

    公开(公告)日：2009-03-12

    申请号：US12247876

    申请日：2008-10-08

    申请人： Tsuyoshi Nakamura ,  Koki Tamura ,  Tomotaka Yamada ,  Taku Hirayama ,  Daisuke Kawana ,  Takayuki Hosono

    发明人： Tsuyoshi Nakamura ,  Koki Tamura ,  Tomotaka Yamada ,  Taku Hirayama ,  Daisuke Kawana ,  Takayuki Hosono

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： C08G77/04 ,  C08G77/24 ,  G03F7/0392 ,  G03F7/0757 ,  Y10T428/31663

    摘要： A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].

    摘要翻译： 提供倍半硅氧烷树脂，正性抗蚀剂组合物，抗蚀剂层压体以及能够抑制脱气现象的形成抗蚀剂图案的方法，以及理想地形成抗蚀剂图案的含硅抗蚀剂组合物和方法 也提供了适用于浸没式光刻技术。 倍半硅氧烷树脂包括由下述通式表示的结构单元[其中，R 1和R 2各自独立地表示直链，支链或环状的饱和脂族烃基; R3表示含有脂肪族单环或多环基团的含有烃基的酸解离性溶解抑制基团， R4表示氢原子，或直链，支链或环状烷基; X表示1〜8个碳原子的烷基，其中至少一个氢原子被氟原子取代; m表示1〜3的整数]。

    Silsesquioxane resin, positive resist composition,layered product including resist and method of forming resist pattern
    2.
    发明申请
    Silsesquioxane resin, positive resist composition,layered product including resist and method of forming resist pattern 审中-公开
    倍半硅氧烷树脂，正性抗蚀剂组合物，包括抗蚀剂的层叠体和形成抗蚀剂图案的方法

    公开(公告)号：US20060222866A1

    公开(公告)日：2006-10-05

    申请号：US10546575

    申请日：2004-02-25

    申请人： Tsuyoshi Nakamura ,  Koki Tamura ,  Tomotaka Yamada ,  Taku Hirayama ,  Daisuke Kawana ,  Takayuki Hosono

    发明人： Tsuyoshi Nakamura ,  Koki Tamura ,  Tomotaka Yamada ,  Taku Hirayama ,  Daisuke Kawana ,  Takayuki Hosono

    IPC分类号： B32B27/00 ,  C08L83/04 ,  C08G77/04 ,  B32B9/04

    CPC分类号： C08G77/04 ,  C08G77/24 ,  G03F7/0392 ,  G03F7/0757 ,  Y10T428/31663

    摘要： A silsesquioxane resin, a positive resist composition, a resist laminate, and a method of forming a resist pattern that are capable of suppressing a degas phenomenon are provided, and a silicon-containing resist composition and a method of forming a resist pattern that are ideally suited to immersion lithography are also provided. The silsesquioxane resin includes structural units represented by the general shown below [wherein, R1 and R2 each represent, independently, a straight chain, branched, or cyclic saturated aliphatic hydrocarbon group; R3 represents an acid dissociable, dissolution inhibiting group containing a hydrocarbon group that includes an aliphatic monocyclic or polycyclic group; R4 represents a hydrogen atom, or a straight chain, branched, or cyclic alkyl group; X represents an alkyl group of 1 to 8 carbon atoms in which at least one hydrogen atom has been substituted with a fluorine atom; and m represents an integer from 1 to 3].

    摘要翻译： 提供倍半硅氧烷树脂，正性抗蚀剂组合物，抗蚀剂层压体以及能够抑制脱气现象的形成抗蚀剂图案的方法，以及理想地形成抗蚀剂图案的含硅抗蚀剂组合物和方法 也提供了适用于浸没式光刻技术。 倍半硅氧烷树脂包括由下列通式表示的结构单元[其中，R 1和R 2各自独立地表示直链，支链或环状的饱和脂族烃 组; R 3表示含有脂肪族单环或多环基团的含有烃基的酸解离性溶解抑制基团， R 4表示氢原子，或直链，支链或环状的烷基; X表示1〜8个碳原子的烷基，其中至少一个氢原子被氟原子取代; m表示1〜3的整数]。

    Positive resist composition, resist laminates and process for forming resist patterns
    3.
    发明申请
    Positive resist composition, resist laminates and process for forming resist patterns 审中-公开
    正抗蚀剂组合物，抗蚀剂层压体和形成抗蚀剂图案的方法

    公开(公告)号：US20070009828A1

    公开(公告)日：2007-01-11

    申请号：US10560126

    申请日：2004-06-11

    申请人： Koki Tamura ,  Daisuke Kawana ,  Tomotaka Yamada ,  Takayuki Hosono ,  Taku Hirayama ,  Kazufumi Sato ,  Hiroshi Shimbori ,  Tomoyuki Ando

    发明人： Koki Tamura ,  Daisuke Kawana ,  Tomotaka Yamada ,  Takayuki Hosono ,  Taku Hirayama ,  Kazufumi Sato ,  Hiroshi Shimbori ,  Tomoyuki Ando

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0757 ,  G03F7/0045

    摘要： A positive resist composition, comprising a resin component (A) that exhibits increased alkali solubility under the action of acid, and an acid generator component (B) that generates acid on exposure, wherein the component (A) includes either a silsesquioxane resin (A1) containing structural units (a1) represented by a general formula (I) shown below, structural units (a2) represented by a general formula (II) shown below, and structural units (a3) represented by a general formula (III) shown below, or a silsesquioxane resin (A2) containing structural units (al) represented by the general formula (I) shown below, and structural units (a2′) represented by a general formula (II′) shown below. In the general formulas below, R1 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R2 represents a straight-chain or branched alkylene group of 1 to 5 carbon atoms, R3 represents an acid dissociable, dissolution inhibiting group, R6 represents an alkyl group of 1 to 5 carbon atoms, R7 represents either an alkyl group of 1 to 5 carbon atoms or a hydrogen atom, and R8 represents an alicyclic hydrocarbon group of 5 to 15 carbon atoms.

    摘要翻译： 含有在酸作用下表现出增加的碱溶性的树脂组分（A）的阳性抗蚀剂组合物和暴露时产生酸的酸产生剂组分（B），其中组分（A）包括倍半硅氧烷树脂（A1） ），由下述通式（I）表示的结构单元（a1），由下述通式（II）表示的结构单元（a2）和由以下所示的通式（III）表示的结构单元（a3） ，或含有下述通式（I）表示的结构单元（a1）的倍半硅氧烷树脂（A2）和由下述通式（II'）表示的结构单元（a2'）。 在下列通式中，R 1表示1至5个碳原子的直链或支链亚烷基，R 2表示直链或支链的亚烷基， 1至5个碳原子，R 3表示酸解离的溶解抑制基团，R 6表示1至5个碳原子的烷基，R 7， / SUP>表示1〜5个碳原子的烷基或氢原子，R 8表示5〜15个碳原子的脂环族烃基。

    Composition for forming antireflection coating
    4.
    发明申请
    Composition for forming antireflection coating 审中-公开
    用于形成抗反射涂层的组合物

    公开(公告)号：US20070281098A1

    公开(公告)日：2007-12-06

    申请号：US11882254

    申请日：2007-07-31

    申请人： Taku Hirayama ,  Tomotaka Yamada ,  Daisuke Kawana ,  Kouki Tamura ,  Kazufumi Sato

    发明人： Taku Hirayama ,  Tomotaka Yamada ,  Daisuke Kawana ,  Kouki Tamura ,  Kazufumi Sato

    IPC分类号： B05D3/00

    CPC分类号： C08G77/14 ,  C08G77/04 ,  C08G77/70 ,  C09D5/32 ,  C09D183/04 ,  C09D183/06 ,  G02B1/111 ,  G03F7/0757 ,  G03F7/091 ,  C08L2666/04

    摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.

    摘要翻译： 一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基） 倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元， （B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。 该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

    Composition for forming antireflection coating
    5.
    发明申请
    Composition for forming antireflection coating 审中-公开
    用于形成抗反射涂层的组合物

    公开(公告)号：US20060021964A1

    公开(公告)日：2006-02-02

    申请号：US11237913

    申请日：2005-09-29

    申请人： Taku Hirayama ,  Tomotaka Yamada ,  Daisuke Kawana ,  Kouki Tamura ,  Kazufumi Sato

    发明人： Taku Hirayama ,  Tomotaka Yamada ,  Daisuke Kawana ,  Kouki Tamura ,  Kazufumi Sato

    IPC分类号： H01B13/00

    CPC分类号： C08G77/14 ,  C08G77/04 ,  C08G77/70 ,  C09D5/32 ,  C09D183/04 ,  C09D183/06 ,  G02B1/111 ,  G03F7/0757 ,  G03F7/091 ,  C08L2666/04

    摘要： A composition for forming an antireflection coating, characterized in that it comprises an organic solvent and, dissolved therein, (A) a ladder silicone copolymer containing (a1) 10 to 90 mole % of a (hydroxyphenylalkyl)silsesquioxane unit, (a2) 0 to 50 mole % of a (alkoxyphenylalkyl)silsesquioxane unit and (a3) 10 to 90 mole % of an alkyl or phenylsilsesquioxane unit, (B) an acid generator generating an acid upon exposure to heat or light, and (C) a crosslinking agent, and is capable of forming an antireflection coating exhibiting an optional parameter (k value) for an ArF laser of the range of 0.002 to 0.95. The composition is soluble in an organic solvent, can be applied by a conventional spin coating method with ease, has good storage stability, and can exhibit an adjusted preventive capability for reflection through the introduction of a chromophoric group absorbing a radiation ray thereto.

    摘要翻译： 一种用于形成抗反射涂层的组合物，其特征在于，其包含有机溶剂，并且溶解于其中（A）含有（〜1/10）10〜90摩尔％的（羟基苯基烷基） 倍半硅氧烷单元，（a 2 O 2）0〜50摩尔％的（烷氧基苯基烷基）倍半硅氧烷单元和（〜3）10〜90摩尔％的烷基或苯基倍半硅氧烷单元， （B）在暴露于热或光时产生酸的酸发生剂，和（C）交联剂，并且能够形成对于0.002至约0.002的范围的ArF激光显示可选参数（k值）的抗反射涂层 0.95。 该组合物可溶于有机溶剂，可以通过常规的旋涂法容易地进行涂布，具有良好的储存稳定性，并且通过引入吸收辐射线的发色团，可以显示调整的防止反射能力。

    Chemical amplification type silicone based positive photoresist composition
    6.
    发明申请
    Chemical amplification type silicone based positive photoresist composition 审中-公开
    化学放大型硅胶正性光致抗蚀剂组合物

    公开(公告)号：US20060003252A1

    公开(公告)日：2006-01-05

    申请号：US10537290

    申请日：2003-12-01

    申请人： Taku Hirayama ,  Tomotaka Yamada ,  Daisuke Kawana ,  Kouki Tamura ,  Kazufumi Sato

    发明人： Taku Hirayama ,  Tomotaka Yamada ,  Daisuke Kawana ,  Kouki Tamura ,  Kazufumi Sato

    IPC分类号： G03F7/021

    CPC分类号： G03F7/0757 ,  C08G77/04 ,  C08L83/06 ,  G03F7/0045

    摘要： A chemical-amplification type silicone-based positive-working resist composition that can be prepared from compounds of good availability as the base materials through simple means and can provide a bilayer resist material from which a fine pattern of high resolution, high aspect ratio, desirable cross-sectional profile and low line edge roughness can be formed. In particular, a chemical-amplification type positive-working resist composition comprising an alkali soluble resin (A) and a photoacid generator (B) wherein a ladder-type silicone copolymer comprising (hydroxyphenylalkyl)silsesquioxane units (a1), (alkoxyphenylalkyl)silsesquioxane units (a2) and alkyl- or phenylsilsesquioxane units (a3) is used as the alkali soluble resin (A). The copolymer wherein, in the component (A), the units (a3) are phenylsilsesquioxane units is a novel compound.

    摘要翻译： 一种化学扩增型硅氧烷正性抗蚀剂组合物，其可以通过简单的方法由具有良好可用性的化合物制备，并且可以提供双层抗蚀剂材料，由此可以获得高分辨率，高纵横比的精细图案 可以形成横截面轮廓和低线边缘粗糙度。 特别是包含碱溶性树脂（A）和光酸产生剂（B）的化学增幅型正性抗蚀剂组合物，其中包含（羟基苯基烷基）倍半硅氧烷单元（a 1 SUB / >），（烷氧基苯基烷基）倍半硅氧烷单元（a 2 N 2）和烷基 - 或苯基倍半硅氧烷单元（a 3 SUB）用作碱溶性树脂（A）。 在组分（A）中，单元（a 3 SUB）是苯基倍半硅氧烷单元的共聚物是新的化合物。

    Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern
    8.
    发明授权
    Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern 有权
    用于在液浸光刻工艺中使用的用于形成抗蚀剂保护膜的材料，复合膜和形成抗蚀剂图案的方法

    公开(公告)号：US07371510B2

    公开(公告)日：2008-05-13

    申请号：US11702602

    申请日：2007-02-06

    申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

    发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

    IPC分类号： G03F7/11 ,  G03F7/20 ,  G03F7/207

    CPC分类号： G03F7/2041 ,  G03F7/11

    摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

    摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。

    Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
    9.
    发明申请
    Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method 审中-公开
    浸渍曝光工艺 - 使用抗蚀剂保护膜形成材料，复合膜和抗蚀剂图案形成方法

    公开(公告)号：US20060141400A1

    公开(公告)日：2006-06-29

    申请号：US10546358

    申请日：2004-02-20

    申请人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

    发明人： Taku Hirayama ,  Ryoichi Takasu ,  Mitsuru Sato ,  Kazumasa Wakiya ,  Masaaki Yoshida ,  Koki Tamura

    IPC分类号： G03F7/00

    CPC分类号： G03F7/2041 ,  G03F7/11

    摘要： Provided are a material for forming a resist protecting film which is for use in a liquid immersion lithography process and which is formed on a resist film, wherein the material has the following properties of: being transparent with respect to exposure light; having substantially no compatibility with a liquid for liquid immersion lithography; and causing no mixing with the resist film, a composite film comprising a protective film formed from the material and a resist film, and a method for forming a resist pattern using them. These can prevent both the resist film and the liquid used from changing in properties during the liquid immersion lithography, so that a resist pattern with high resolution can be formed using the liquid immersion lithography.

    摘要翻译： 提供一种用于形成抗蚀剂保护膜的材料，其用于液浸光刻工艺，并形成在抗蚀剂膜上，其中该材料具有以下特性：相对于曝光光是透明的; 基本上不与用于液浸光刻的液体相容; 并且不与抗蚀剂膜混合，包含由该材料形成的保护膜和抗蚀剂膜的复合膜以及使用它们形成抗蚀剂图案的方法。 这些可以防止在液浸光刻期间使用的抗蚀剂膜和液体的性质改变，使得可以使用液浸光刻法形成具有高分辨率的抗蚀剂图案。