公开(公告)号：US20160254439A1

公开(公告)日：2016-09-01

申请号：US15061205

申请日：2016-03-04

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Daniel M. Potrepka ,  James R. Mulcahy ,  Ronald G. Polcawich

IPC: H01L41/314 ,  C30B1/02 ,  C30B1/10 ,  H01L41/297 ,  C30B29/16 ,  C30B29/32 ,  C30B29/68 ,  C30B23/08 ,  C30B29/02

CPC classification number: C30B29/68 ,  C23C14/088 ,  C23C14/185 ,  C23C14/5853 ,  C30B1/02 ,  C30B1/10 ,  C30B23/025 ,  C30B25/183 ,  C30B29/02 ,  C30B29/16 ,  C30B29/32 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/27 ,  H01L41/316 ,  H01L41/319

Abstract: A method of making a piezoelectric device comprising providing a deposition chamber, the deposition chamber having reduced pressure therein; loading a substrate into the deposition chamber; sputter depositing hexagonal 001 oriented titanium on the substrate; providing an oxygen anneal to convert 001 oriented titanium into 100 oriented rutile TiO2; sputter depositing a 111 or 100 oriented textured conducting material for use as an electrode; sputter depositing a hexagonal 001 oriented titanium and providing an oxygen anneal in a lead oxide environment to convert 001 oriented titanium into 100 oriented rutile TiO2 or PbxTi1-xO3; sputter depositing textured lead zirconate titanate PbZrxTi1-x03 having an 001 orientation as a piezoelectric layer, and sputter depositing a textured electrode on top of the textured lead zirconate titanate; whereby processing of the layers within the deposition chamber provides minimized exposure to ambient contamination and improved texturing in the resulting films.

Abstract translation: 一种制造压电装置的方法，包括提供沉积室，所述沉积室中的压力降低; 将基板装载到沉积室中; 在基板上溅射沉积六方晶001取向的钛; 提供氧退火以将001取向的钛转化为100取向的金红石TiO 2; 溅射沉积用作电极的111或100取向纹理导电材料; 溅射沉积六方晶001取向的钛，并在氧化铅环境中提供氧退火，将001取向的钛转化为100取向的金红石TiO2或PbxTi1-xO3; 将具有001取向的纹理化锆酸铅PbZrxTi1-x03溅射沉积作为压电层，并且在织构化的锆钛酸铅钛酸盐的顶部溅射沉积织构化电极; 由此沉积室内的层的处理提供最小化的暴露于环境污染和改进所得膜中的纹理化。

公开(公告)号：US20140265734A1

公开(公告)日：2014-09-18

申请号：US14219028

申请日：2014-03-19

Applicant: U.S. Army Research Laboratory ATTN: RDRL-LOC-I

Inventor： Glen R. Fox ,  Ronald G. Polcawich ,  Daniel M. Potrepka ,  Luz M. Sanchez

IPC: H01L41/08 ,  H01L41/319

CPC classification number: H01L41/081 ,  C23C18/1216 ,  C23C18/1291 ,  C23C18/1295 ,  C30B23/025 ,  C30B25/183 ,  C30B29/32 ,  H01L41/0815 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/318 ,  H01L41/319

Abstract: A ferroelectric device comprising a substrate;a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.

Abstract translation: 1.一种铁电体元件，其特征在于， 纹理层; 第一电极，其包括具有分为颗粒区域的晶格结构的金属材料薄层; 种子层; 种子层被外延沉积以在第一电极的颗粒区域的顶部上形成柱状结构; 表现出外延淀积在种子层上的自发极化的至少一个铁电材料层; 每个具有柱状结构产生与生长平面垂直的高度极化的粒状区域的铁电材料层，种子层和第一电极以及制造方法。