公开(公告)号：US20140312266A1

公开(公告)日：2014-10-23

申请号：US14357768

申请日：2012-09-14

Applicant: UBMATERIALS Inc.

Inventor： Jea Gun Park ,  Gon Sub Lee ,  Jin Hyung Park ,  Jae Hyung Lim ,  Jong Young Cho ,  Hee Sub Hwang ,  Hao Cui

IPC: C23F1/14

CPC classification number: C23F1/14 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/3212 ,  H01L21/7684

Abstract: Disclosed are a polishing slurry used in a polishing process of tungsten and a method of polishing using the same. The slurry includes an abrasive for performing polishing and an oxidation promoting agent for promoting the formation of an oxide. The abrasive includes titanium oxide particles.

Abstract translation: 公开了用于钨的抛光工艺的抛光浆料和使用其的抛光方法。 浆料包括用于进行抛光的研磨剂和用于促进氧化物形成的氧化促进剂。 研磨剂包括氧化钛颗粒。

公开(公告)号：US09758698B2

公开(公告)日：2017-09-12

申请号：US15073625

申请日：2016-03-17

Applicant: UBMATERIALS INC.

Inventor： Jin Hyung Park

IPC: H01L21/302 ,  H01L21/461 ,  C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/28079 ,  H01L21/3212

Abstract: Provided are slurry for polishing cobalt and a substrate polishing method. The slurry includes an abrasive configured to perform the polishing, the abrasive comprising zirconium oxide particles, a dispersing agent configured to disperse the abrasive, and a polishing accelerator configured to accelerate the polishing. The polishing accelerator includes an organic acid containing an amine group and a carboxylic group. According to the slurry in accordance with an exemplary embodiment, a polishing rate of the cobalt may increases without using an oxidizing agent, and local corrosion defects on a surface of the cobalt may be suppressed.

公开(公告)号：US12113077B2

公开(公告)日：2024-10-08

申请号：US16927327

申请日：2020-07-13

Applicant: Samsung Display Co., LTD. ,  UBmaterials Inc.

Inventor： Joon-Hwa Bae ,  Jin Hyung Park ,  Bonggu Kang ,  Seungbae Kang ,  Heesung Yang ,  Woojin Cho ,  Byoung Kwon Choo

IPC: H01L27/12 ,  C09G1/02 ,  C09K3/14 ,  H01L21/3105

CPC classification number: H01L27/1251 ,  C09G1/02 ,  C09K3/1409 ,  H01L21/31053 ,  H01L27/1229 ,  H01L27/1248 ,  H01L27/1259

Abstract: A polishing slurry is disclosed which includes about 0.01 wt % to about 10 wt % of polishing particles, about 0.005 wt % to about 0.1 wt % of a dispersing agent, about 0.001 wt % to about 1 wt % of an oxide-polishing promoter including a pyridine compound, about 0.05 wt % to about 0.1 wt % of a nitride-polishing inhibitor including an amino acid or an anionic organic acid, and water. A method for manufacturing a display device including an active pattern disposed on a base substrate, a gate metal pattern including a gate electrode overlapping the active pattern, a planarized insulation layer disposed on the gate metal pattern, and a source metal pattern disposed on the planarized insulation layer is also disclosed.

公开(公告)号：US09834705B2

公开(公告)日：2017-12-05

申请号：US15047624

申请日：2016-02-18

Applicant: UBMATERIALS INC.

Inventor： Jin Hyung Park

IPC: C09K13/06 ,  C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/3212

Abstract: Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.

公开(公告)号：US09790401B2

公开(公告)日：2017-10-17

申请号：US15095008

申请日：2016-04-08

Applicant: UBMATERIALS INC.

Inventor： Jin Hyung Park

IPC: C09G1/02 ,  C01F17/00 ,  C09K3/14

CPC classification number: C09G1/02 ,  C01F17/0043 ,  C01P2004/03 ,  C01P2004/32 ,  C01P2004/51 ,  C01P2004/64 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463

Abstract: The present disclosure relates to abrasive particles, a polishing slurry and a fabricating method of the abrasive particles. The fabricating method of abrasive particles in accordance with an exemplary embodiment of the present disclosure includes preparing a precursor solution in which a first precursor is mixed with a second precursor that is different from the first precursor, preparing a basic solution, mixing the basic solution with the precursor solution and forming a precipitate, and washing abrasive particles synthesized by precipitation.