公开(公告)号：US09142641B1

公开(公告)日：2015-09-22

申请号：US14516545

申请日：2014-10-16

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Chao-Hung Lin ,  Shih-Hung Tsai ,  Ssu-I Fu ,  Jyh-Shyang Jenq

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/308

CPC classification number: H01L29/6656 ,  H01L21/022 ,  H01L21/3086 ,  H01L21/31051 ,  H01L21/31116 ,  H01L29/66795

Abstract: A method for manufacturing a FinFET includes forming a merging spacer, through a plurality of sidewall pattern-transferring processes, and modifying a first interval between adjacent first mandrels as shorter than twice of thicknesses of a nitride layer, which is formed on the first mandrels and contoured thereto, followed by a first spacer being formed on a sidewall thereof, so that a FinFET composed of a plurality of fin-shaped structures having a non-integral multiple of pitches as well as an integral multiple of pitches can be manufactured.

Abstract translation: 一种用于制造FinFET的方法包括：通过多个侧壁图案转移工艺形成合并间隔物，并且修改相邻的第一心轴之间的第一间隔，其长度小于形成在第一心轴上的氮化物层的厚度的两倍， 然后在其侧壁上形成第一间隔物，从而可以制造由具有非整数倍的间距的多个鳍状结构构成的FinFET以及整数倍的间距。

公开(公告)号：US09123659B1

公开(公告)日：2015-09-01

申请号：US14516554

申请日：2014-10-16

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： Ssu-I Fu ,  Shih-Hung Tsai ,  Yu-Hsiang Hung ,  Li-Wei Feng ,  Jyh-Shyang Jenq

IPC: H01L27/088 ,  H01L21/308 ,  H01L29/66 ,  H01L21/762 ,  H01L27/108 ,  H01L21/033

CPC classification number: H01L21/3086 ,  H01L21/0334 ,  H01L21/3083 ,  H01L21/76224 ,  H01L21/76229 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/10879 ,  H01L29/66795

Abstract: A method for manufacturing a finFET device is provided. Firstly, a first multiple layer structure and a second multiple layer structure are formed on a substrate in sequence. Then, a first sacrificial pattern is formed on the second multiple layer structure. A first spacer is next formed on a sidewall of the first sacrificial pattern. Subsequently, a portion of the second multiple layer structure is etched so as to form a second sacrificial pattern by using the first spacer as a hard mask. Next, a second spacer is formed on a sidewall of the second sacrificial pattern. After that, the first multiple layer structure is patterned by using the second spacer as a hard mask. Finally, the substrate is etched so as to form at least a first fin structure by using the patterned first multiple layer structure as a hard mask.

Abstract translation: 提供一种制造finFET器件的方法。 首先，依次在基板上形成第一多层结构和第二多层结构。 然后，在第二多层结构上形成第一牺牲图案。 接下来，在第一牺牲图案的侧壁上形成第一间隔物。 随后，蚀刻第二多层结构的一部分，以便通过使用第一间隔物作为硬掩模形成第二牺牲图案。 接下来，在第二牺牲图案的侧壁上形成第二间隔物。 之后，通过使用第二间隔物作为硬掩模来对第一多层结构进行构图。 最后，通过使用图案化的第一多层结构作为硬掩模，蚀刻衬底以形成至少第一鳍结构。