Abstract:
A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size
Abstract:
A visible light photocatalyst coating includes a metal oxide that in the presence of a organic contaminate that absorbs at least some visible light or includes the metal oxide and an auxiliary visible light absorbent, where upon absorption of degradation of the organic contaminate occurs. Contaminates can be microbes, such as bacteria, viruses, or fungi. The metal oxide is nanoparticulate or microparticulate. The metal oxide can be TiO2. The coating can include an auxiliary dye having an absorbance of light in at least a portion of the visible spectrum. The coating can include a suspending agent, such as NaOH. The visible light photocatalyst coating can cover a surface of a device that is commonly handled or touched, such as a door knob, rail, or counter.
Abstract:
A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm2 greater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mm2 is placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.
Abstract translation:化学机械抛光(CMP)包括提供包括分散在水性载体中的复合颗粒的浆料,其包含在软核颗粒的外表面上的多个硬颗粒。 硬质颗粒具有比软核颗粒的莫氏硬度至少大1的莫氏硬度和/或比软核颗粒大至少500kg / mm 2的维氏硬度。 将具有大于莫氏数6的维氏硬度大于1000kg / mm2的基板表面的基板放置在具有旋转抛光垫的CMP设备中,并且用旋转抛光垫和浆料进行CMP 抛光衬底表面。
Abstract:
A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size 150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.