METHOD OF CHEMICAL MECHANICAL POLISHING OF ALUMINA
    1.
    发明申请
    METHOD OF CHEMICAL MECHANICAL POLISHING OF ALUMINA 审中-公开
    铝的化学机械抛光方法

    公开(公告)号:US20170072530A1

    公开(公告)日:2017-03-16

    申请号:US15341130

    申请日:2016-11-02

    CPC classification number: B24B37/20 C09G1/02 C09G1/04 C23F3/00

    Abstract: A CMP method uses a slurry including colloidal metal oxide or colloidal semiconductor oxide particles (colloidal particles) in water. At least one particle feature is selected from (i) the colloidal particles having a polydispersity >30%, and (ii) mixed particle types including the colloidal particles having an average primary size >50 nm mixed with fumed oxide particles having average primary size

    Abstract translation: CMP方法使用包含胶体金属氧化物或胶态半导体氧化物颗粒(胶体颗粒)在水中的浆料。 从(i)多分散性> 30%的胶体粒子中选择至少一种粒子特征,和(ii)包含具有平均初级粒径> 50nm的胶体粒子的混合粒子类型与平均一次粒径< 25nm。 将具有氧化铝表面的基板放入CMP设备中,并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。 多分散性通过多分散性公式确定,其分布宽度(w)涉及第二较大粒径的宽度w1和宽度w2。 多分散性公式=(w2-w1)×100 / dav,其含有体积和天数的胶体粒子的总量的63%是胶体粒子的平均粒径。

    CONTAMINANT-ACTIVATED PHOTOCATALYSIS

    公开(公告)号:US20210060531A1

    公开(公告)日:2021-03-04

    申请号:US16321494

    申请日:2017-07-31

    Abstract: A visible light photocatalyst coating includes a metal oxide that in the presence of a organic contaminate that absorbs at least some visible light or includes the metal oxide and an auxiliary visible light absorbent, where upon absorption of degradation of the organic contaminate occurs. Contaminates can be microbes, such as bacteria, viruses, or fungi. The metal oxide is nanoparticulate or microparticulate. The metal oxide can be TiO2. The coating can include an auxiliary dye having an absorbance of light in at least a portion of the visible spectrum. The coating can include a suspending agent, such as NaOH. The visible light photocatalyst coating can cover a surface of a device that is commonly handled or touched, such as a door knob, rail, or counter.

    POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES
    3.
    发明申请
    POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES 有权
    硬质基材与软核复合颗粒的抛光

    公开(公告)号:US20160060488A1

    公开(公告)日:2016-03-03

    申请号:US14471755

    申请日:2014-08-28

    Abstract: A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm2 greater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mm2 is placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.

    Abstract translation: 化学机械抛光(CMP)包括提供包括分散在水性载体中的复合颗粒的浆料,其包含在软核颗粒的外表面上的多个硬颗粒。 硬质颗粒具有比软核颗粒的莫氏硬度至少大1的莫氏硬度和/或比软核颗粒大至少500kg / mm 2的维氏硬度。 将具有大于莫氏数6的维氏硬度大于1000kg / mm2的基板表面的基板放置在具有旋转抛光垫的CMP设备中,并且用旋转抛光垫和浆料进行CMP 抛光衬底表面。

    CHEMICAL MECHANICAL POLISHING OF ALUMINA
    4.
    发明申请
    CHEMICAL MECHANICAL POLISHING OF ALUMINA 有权
    氧化铝的化学机械抛光

    公开(公告)号:US20160032461A1

    公开(公告)日:2016-02-04

    申请号:US14450885

    申请日:2014-08-04

    CPC classification number: B24B37/20 C09G1/02 C09G1/04 C23F3/00

    Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size 150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

    Abstract translation: CMP方法使用在水中包含第一金属氧化物或半导体氧化物颗粒(第一氧化物颗粒)的浆料。 至少一个颗粒特征选自(i)具有多分散性> 30%的第一氧化物颗粒,(ii)包括第一或第II族离子的第一氧化物颗粒上的涂层,过渡金属氧化物或有机材料,(iii)第一 与煅制氧化物颗粒混合的氧化物颗粒,(iv)平均初级尺寸> 50nm的第一氧化物颗粒与平均初级尺寸<25nm的热解氧化物颗粒混合,和(v)每单位面积的每个表面积的第一氧化物颗粒< 100m 2 / gm与具有平均每单位面积重量> 150m 2 / gm的另一种氧化物颗粒混合。 将具有氧化铝表面的基板放入CMP设备中,并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。

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