摘要:
The method comprises the steps of: forming an integrated device including a microactuator in a semiconductor material wafer; forming an immobilization structure of organic material on the wafer; simultaneously forming a securing flange integral with the microactuator and electrical connections for connecting the integrated device to a read/write head; bonding a transducer supporting the read/write head to the securing flange; connecting the electrical connections to the read/write head; cutting the wafer into dices; bonding the microactuator to a suspension; and removing the immobilization structure.
摘要:
The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
摘要:
The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
摘要:
A method of producing suspended elements for electrical connection between two portions of a micro-mechanism that can move relative to one another provides for the formation of a layer of sacrificial material, the formation of the electrical connection elements on the layer of sacrificial material, and the selective removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film with at least one adhesive side that can be applied dry to the surface of the micro-mechanism.
摘要:
A method for the electrical and/or mechanical interconnection of components of a microelectronic system includes at least one first component and at least one second component to be connected, and at least one local Joule-effect micro-heater is incorporated in one of the first and second components at a respective soldering point therebetween. The method includes supplying electrical energy to the micro-heater to utilize the heat produced therefrom by the Joule effect to solder the first and second components at the respective soldering point.
摘要:
The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.
摘要:
In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.
摘要:
In an electrostatic micromotor, a mobile substrate faces a fixed substrate and is suspended over the fixed substrate at a given distance of separation in an operative resting condition; an actuation unit is configured so as to give rise to a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement during an operative condition of actuation. The actuation unit is also configured so as to bring the mobile substrate and the fixed substrate substantially into contact and to keep them in contact during the operative condition of actuation. The electrostatic micromotor is provided with an electronic unit for reducing friction, configured so as to reduce a friction generated by the contact between the rotor substrate and the stator substrate during the relative movement.
摘要:
In an electrostatic micromotor, a mobile substrate faces a fixed substrate, and electrostatic-interaction elements are provided to allow a relative movement of the mobile substrate with respect to the fixed substrate in a direction of movement. The electrostatic-interaction elements include electrodes arranged on a facing surface of the fixed substrate (2) facing the mobile substrate. The mobile substrate has indentations, which extend within the mobile substrate starting from a respective facing surface that faces the fixed substrate and define between them projections staggered with respect to the electrodes in the direction of movement. Side walls of the indentations have a first distance of separation at the respective facing surface, and a second distance of separation, greater than the first distance of separation, at an internal region of the indentations.
摘要:
A wafer of semiconductor material for fabricating integrated devices, including a stack of superimposed layers including first and second monocrystalline silicon layers separated by an intermediate insulating layer made of a material selected from the group comprising silicon carbide, silicon nitride and ceramic materials. An oxide bond layer is provided between the intermediate layer and the second silicon layer. The wafer is fabricated by forming the intermediate insulating layer on the first silicon layer in a heated vacuum chamber; depositing the oxide layer; and superimposing the second silicon layer. When the stack of silicon, insulating material, oxide and silicon layers is heat treated, the oxide reacts so as to bond the insulating layer to the second silicon layer. As a ceramic material beryllium oxide, aluminium nitride, boron nitride and alumina may be used.