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公开(公告)号:US12062742B2
公开(公告)日:2024-08-13
申请号:US17653659
申请日:2022-03-07
Applicant: Unimicron Technology Corp.
Inventor: Hao-Wei Tseng , Chi-Hai Kuo , Jeng-Ting Li , Ying-Chu Chen , Pu-Ju Lin , Cheng-Ta Ko
IPC: H01L33/54 , H01L23/00 , H01L25/075
CPC classification number: H01L33/54 , H01L24/83 , H01L25/0753 , H01L24/29 , H01L24/32 , H01L2224/29194 , H01L2224/32227 , H01L2224/83099 , H01L2224/83203 , H01L2224/83856 , H01L2224/83862 , H01L2224/8389 , H01L2924/12041 , H01L2933/005
Abstract: A package structure includes a substrate, a plurality of conductive pads, a light-emitting diode, a photo imageable dielectric material, and a black matrix. The substrate includes a top surface. The conductive pads are located on the top surface of the substrate. The light-emitting diode is located on the conductive pads. The photo imageable dielectric material is located between the light-emitting diode and the top surface of the substrate and between the conductive pads. An orthogonal projection of the light-emitting diode on the substrate is overlapped with an orthogonal projection of the photo imageable dielectric material on the substrate. The black matrix is located on the top surface of the substrate and the conductive pads.
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公开(公告)号:US11460255B2
公开(公告)日:2022-10-04
申请号:US17113332
申请日:2020-12-07
Applicant: UNIMICRON TECHNOLOGY CORP.
Inventor: Pu-Ju Lin , Ying-Chu Chen , Wei-Ci Ye , Chi-Hai Kuo , Cheng-Ta Ko
IPC: B23P15/26 , F28D15/04 , C23F17/00 , H05K7/20 , H01L23/427
Abstract: A vapor chamber device and a manufacturing method are disclosed. The vapor chamber has a housing and multiple independent chambers. The housing includes two shells opposite to each other. The independent chambers are formed between the two shells. Each independent chamber contains a working fluid and has at least one diversion bump and a capillary structure. The diversion bump is formed on an inner surface of the second shell, and the capillary structure is mounted on the diversion bump. When the vapor chamber device is vertically mounted to a heat source, the independent chambers at an upper portion of the vapor chamber device still contain the working fluid. The working fluid in the independent chambers may not all flow to a bottom of the vapor chamber device. Therefore, a contact area between the working fluid and the heat source is increased and heat dissipation efficiency is improved.
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