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    FBAR device frequency stabilized against temperature drift
    1.
    发明申请
    FBAR device frequency stabilized against temperature drift 审中-公开
    FBAR器件频率稳定，防止温度漂移

    公开(公告)号：US20060001329A1

    公开(公告)日：2006-01-05

    申请号：US10882510

    申请日：2004-06-30

    申请人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    发明人： Valluri Rao ,  Qing Ma ,  Quan Tran ,  Dong Shim ,  Li-Peng Wang

    IPC分类号： H01L41/08

    CPC分类号： H03H9/02102 ,  H03H2009/02196

    摘要： A film bulk acoustic resonator (FBAR) comprises a piezoelectric film sandwiched between a top electrode and a bottom electrode. A temperature sensor is provided to sense a temperature to determine a temperature induced frequency drift for the FBAR. A voltage controller operatively connected to the temperature sensor supplies a direct current (DC) bias voltage to the FBAR to induce an opposite voltage induced frequency drift to compensate for the temperature induced frequency drift.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括夹在顶部电极和底部电极之间的压电薄膜。 提供温度传感器以感测温度以确定FBAR的温度感应频率漂移。 可操作地连接到温度传感器的电压控制器向FBAR提供直流（DC）偏置电压以引起相反的电压感应频率漂移以补偿温度引起的频率漂移。

    Microelectromechanical (MEMS) switching apparatus
    3.
    发明授权
    Microelectromechanical (MEMS) switching apparatus 有权
    微机电（MEMS）开关装置

    公开(公告)号：US06686820B1

    公开(公告)日：2004-02-03

    申请号：US10194096

    申请日：2002-07-11

    申请人： Qing Ma ,  Valluri Rao ,  John Heck ,  Li-Peng Wang ,  Dong Shim ,  Quan Tran

    发明人： Qing Ma ,  Valluri Rao ,  John Heck ,  Li-Peng Wang ,  Dong Shim ,  Quan Tran

    IPC分类号： H01P110

    CPC分类号： H01H59/0009 ,  H01H2001/0078 ,  H01H2059/0036

    摘要： This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a distal end, the proximal end being attached to the anchor, an actuation portion attached to the distal end of the tapered portion, a tip attached to the actuation portion, the tip having a contact dimple thereon. The switch apparatus also includes an actuation electrode attached to the substrate and positioned between the actuation portion and the substrate. Additional embodiments are also described and claimed.

    摘要翻译： 本申请公开了一种微机电（MEMS）开关设备，其包括附接到基板的锚固件和附接到锚固件并与其接触的导电梁。 所述梁包括具有近端和远端的锥形部分，所述近端附接到所述锚固件，附接到所述锥形部分的远端的致动部分，附接到所述致动部分的尖端，所述尖端具有触点 在其上的凹坑。 开关装置还包括附接到基板并位于致动部分和基板之间的致动电极。 还描述和要求保护附加实施例。

    Microelectromechanical (MEMS) switching apparatus
    4.
    发明申请
    Microelectromechanical (MEMS) switching apparatus 有权
    微机电（MEMS）开关装置

    公开(公告)号：US20050007219A1

    公开(公告)日：2005-01-13

    申请号：US10912413

    申请日：2004-08-04

    申请人： Qing Ma ,  Valluri Rao ,  John Heck ,  Li-Peng Wang ,  Dong Shim ,  Quan Tran

    发明人： Qing Ma ,  Valluri Rao ,  John Heck ,  Li-Peng Wang ,  Dong Shim ,  Quan Tran

    IPC分类号： H01H59/00 ,  H01H51/22

    CPC分类号： H01H59/0009 ,  H01H2001/0078 ,  H01H2059/0036

    摘要： This application discloses a microelectromechanical (MEMS) switch apparatus comprising an anchor attached to a substrate and an electrically conductive beam attached to the anchor and in electrical contact therewith. The beam comprises a tapered portion having a proximal end and a distal end, the proximal end being attached to the anchor, an actuation portion attached to the distal end of the tapered portion, a tip attached to the actuation portion, the tip having a contact dimple thereon. The switch apparatus also includes an actuation electrode attached to the substrate and positioned between the actuation portion and the substrate. Additional embodiments are also described and claimed.

    摘要翻译： 本申请公开了一种微机电（MEMS）开关设备，其包括附接到基板的锚固件和附接到锚固件并与其接触的导电梁。 所述梁包括具有近端和远端的锥形部分，所述近端附接到所述锚固件，附接到所述锥形部分的远端的致动部分，附接到所述致动部分的尖端，所述尖端具有触点 在其上的凹坑。 开关装置还包括附接到基板并位于致动部分和基板之间的致动电极。 还描述和要求保护附加实施例。

    Manufacturing film bulk acoustic resonator filters
    6.
    发明申请
    Manufacturing film bulk acoustic resonator filters 审中-公开
    制造膜体声波谐振器滤波器

    公开(公告)号：US20060176126A1

    公开(公告)日：2006-08-10

    申请号：US11335920

    申请日：2006-01-19

    申请人： Li-Peng Wang ,  Eyal Bar-Sadeh ,  Valluri Rao ,  John Heck ,  Qing Ma ,  Quan Tran ,  Alexander Talalyevsky ,  Eyal Ginsburg

    发明人： Li-Peng Wang ,  Eyal Bar-Sadeh ,  Valluri Rao ,  John Heck ,  Qing Ma ,  Quan Tran ,  Alexander Talalyevsky ,  Eyal Ginsburg

    IPC分类号： H04R17/00

    CPC分类号： H03H9/564 ,  H03H3/02 ,  Y10T29/42

    摘要： A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

    摘要翻译： 薄膜体声波谐振器滤波器可以形成有形成在同一膜上的多个互连串联和分流膜体声波谐振器。 膜体积声谐振器中的每一个可以由限定为形成每个膜体声波谐振器的底部电极的公共下导电层形成。 可以限定共同的顶部导电层以形成每个膜体声波谐振器的每个顶部电极。 可以或可以不被图案化的公共压电膜层形成连续或不连续的膜。

    Packaging microelectromechanical structures
    7.
    发明授权
    Packaging microelectromechanical structures 有权
    包装微机电结构

    公开(公告)号：US06903452B2

    公开(公告)日：2005-06-07

    申请号：US10643427

    申请日：2003-08-19

    申请人： Qing Ma ,  Valluri Rao ,  Li-Peng Wang ,  John Heck ,  Quan Tran

    发明人： Qing Ma ,  Valluri Rao ,  Li-Peng Wang ,  John Heck ,  Quan Tran

    IPC分类号： B81B7/00 ,  H01L23/02 ,  H01L23/34 ,  H01L23/48

    CPC分类号： B81B7/0006 ,  B81C2203/0118 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A microelectromechanical system may be enclosed in a hermetic cavity defined by joined, first and second semiconductor structures. The joined structures may be sealed by a solder sealing ring, which extends completely around the cavity. One of the semiconductor structures may have the system formed thereon and an open area may be formed underneath said system. That open area may be formed from the underside of the structure and may be closed by covering with a suitable film in one embodiment.

    摘要翻译： 微机电系统可封闭在由连接的第一和第二半导体结构限定的密封腔中。 接合结构可以通过完全围绕空腔延伸的焊料密封环密封。 半导体结构中的一个可以具有形成在其上的系统，并且可以在所述系统下方形成开放区域。 该开放区域可以由结构的下侧形成，并且在一个实施例中可以通过用适当的膜覆盖来封闭。

    Arrangement and method to perform scanning readout of ferroelectric bit charges
    10.
    发明授权
    Arrangement and method to perform scanning readout of ferroelectric bit charges 有权
    执行铁电位电荷的扫描读出的布置和方法

    公开(公告)号：US08264941B2

    公开(公告)日：2012-09-11

    申请号：US11964580

    申请日：2007-12-26

    申请人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    发明人： Quan Anh Tran ,  Byong M. Kim ,  Robert N. Stark ,  Nathan R. Franklin ,  Qing Ma ,  Valluri Rao ,  Donald E. Adams ,  Li-Peng Wang ,  Yevgeny V. Anoikin

    IPC分类号： G11B9/02

    CPC分类号： G11B9/02 ,  B82Y10/00 ,  G11B9/1409

    摘要： An arrangement, a method and a system to read information stored in a layer of ferroelectric media. The arrangement includes a layer including a ferroelectric media having one or more ferroelectric domains holding bit charges, a domain corresponding to information; a probe having a tip, wherein the media and the tip are adapted to move relative to one another such that the tip scans the ferroelectric domains of the media while applying a contact force to the domains to generate a direct piezoelectric effect within the domains; and circuitry coupled to the tip and adapted to generate a signal in response to an electrical coupling between the tip and the domains while scanning the tip in contact with the domains, the signal corresponding to a readout signal for ferroelectric bit charges stored in the media.

    摘要翻译： 读取存储在铁电介质层中的信息的布置，方法和系统。 该布置包括具有一个或多个保持位电荷的铁电畴的铁电介质的层，对应于信息的畴; 具有尖端的探针，其中介质和尖端适于相对于彼此移动，使得尖端扫描介质的铁电畴，同时向畴施加接触力以在畴内产生直接压电效应; 以及耦合到所述尖端并且适于响应于所述尖端和所述域之间的电耦合而产生信号的电路，同时扫描与所述区域接触的尖端，所述信号对应于存储在所述介质中的铁电位电荷的读出信号。