Abstract:
A system and method of use for simplifying the measurement of various properties of complex semiconductor structures is provided. The system and method supports reduction of structure complexity and modeling for optical monitoring and permits determination of film thicknesses and feature depths during semiconductor manufacturing processes.
Abstract:
The disclosure recognizes that it is better to not start monitoring a controllable process than to monitor that process with an optical instrument, such as a process controlling instrument/sensor, when that optical instrument is not operating properly. Accordingly, the disclosure relates to novel features for checking that an optical instrument, such as a spectrometer, is working properly before being used to monitor a semiconductor process. In one aspect the disclosure provides a system for evaluation and verification of an operational state of an optical instrument. In one example, the system includes: (1) an integrated light source, (2) an optical sensor for collecting light from the integrated light source, (3) a controller controlling the integrated light source and the optical sensor, and (4) a processor for processing collected optical signal data obtained from the light and deriving a metric indicative of the operational state.
Abstract:
A system and method of use for simplifying the measurement of various properties of complex semiconductor structures is provided. The system and method supports reduction of structure complexity and modeling for optical monitoring and permits determination of film thicknesses and feature depths during semiconductor manufacturing processes.
Abstract:
The disclosure provides an optical calibration device for in-chamber calibration of optical signals associated with a processing chamber, a characterization system for plasma processing chambers, methods of characterizing plasma processing chambers, and a chamber characterizer. In one example, the optical calibration device includes: (1) an enclosure, (2) an optical source located within the enclosure and configured to provide a source light having a continuous spectrum, and (3) optical shaping elements located within the enclosure and configured to form the source light into a calibrating light that approximates a plasma emission during an operation within the processing chamber.
Abstract:
An optical instrument of very high resolution is provided that can be used for monitoring semiconductor processes. Very high resolution may be considered in this application space to be resolutions sufficient to permit resolving of individual molecular rovibrational emission lines. In one example an optical instrument is provided that includes: (1) an optical interface that receives an optical fiber, (2) a narrow band pass filter that filters out a portion of an optical signal received via the optical fiber, (3) optical components that are selectively combined to process at least a portion of the unfiltered optical signal, wherein the optical components include a sensor that receives the unfiltered optical signal, and (4) one or more processors that process electrical signals from the sensor. The optical instrument can be a spectrometer suitable for a process control instrument.
Abstract:
The disclosure provides an optical calibration device for in-chamber calibration of optical signals associated with a processing chamber, a characterization system for plasma processing chambers, methods of characterizing plasma processing chambers, and a chamber characterizer. In one example, the optical calibration device includes: (1) an enclosure, (2) an optical source located within the enclosure and configured to provide a source light having a continuous spectrum, and (3) optical shaping elements located within the enclosure and configured to form the source light into a calibrating light that approximates a plasma emission during an operation within the processing chamber.
Abstract:
Emitted light from a pulsed plasma system is detected, amplified and digitized over a plurality of pulse modulation cycles to produce a digitized signal over the plurality of RF modulation periods, each of which contains an amount of random intensity variations. The individual signal periods are then mathematically combined to produce a stable local reference waveform signal that has decreased random intensity variations. One mechanism for creating a stable local reference waveform signal is by subdividing each of the individual signal periods into a plurality of subunits and the mathematically averaging the respective subunits within the modulation period to produce the stable local reference waveform signal for the modulation period. The stable local reference waveform signal can then be compared to other instantaneous waveform signals from the pulsed plasma system, or waveform parameters can be derived using various signal processing techniques such as Fourier analysis.