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公开(公告)号：US07595594B2
公开(公告)日：2009-09-29
申请号：US12041121
申请日：2008-03-03
IPC分类号： H05B31/26
摘要： The present invention is directed to an arrangement for switching high electric currents by way of a gas discharge at high voltages or for generating gas discharge plasma emitting EUV radiation. It is the object of the invention to find a novel possibility for generating a hollow cathode plasma that permits a longer life of the cathodes of short wavelength-emitting gas discharge radiation sources and pseudospark switches, also in high-power operation. This object is met in that the metal wall between the hollow cathode space and the discharge space has a thickness on the order of the centimeter range so that the openings of the metal wall change into relatively long channels and in that substantially radially extending cooling channels are introduced in the metal wall to reduce the ion erosion of the metal wall of the hollow cathode through efficient cooling.
摘要翻译： 本发明涉及一种用于通过高压气体放电或用于产生气体放电等离子体发射EUV辐射来切换高电流的装置。 本发明的目的是发现一种产生中空阴极等离子体的新颖可能性，其允许短波长发射气体放电辐射源和伪脉冲开关的阴极在大功率操作中寿命更长。 满足这个目的在于，中空阴极空间和放电空间之间的金属壁具有大约厘米范围的厚度，使得金属壁的开口变成相对较长的通道，并且基本上径向延伸的冷却通道是 引入金属壁，以通过有效的冷却来减少空心阴极的金属壁的离子侵蚀。
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2.发明申请ARRANGEMENT FOR THE GENERATION OF INTENSIVE SHORT-WAVELENGTH RADIATION BASED ON A GAS DISCHARGE PLASMA 有权基于气体放电等离子体产生强烈的短波辐射的布置公开(公告)号：US20060273732A1
公开(公告)日：2006-12-07
申请号：US11421144
申请日：2006-05-31
摘要： The invention is directed to an arrangement for the generation of intensive short-wavelength radiation based on a gas discharge plasma. It is the object of the invention to find a novel possibility for generating intensive short-wavelength radiation, particularly EUV radiation, based on a gas discharge plasma which achieves a long life of the electrode system along with a high total efficiency of the radiation source without substantially increasing the dimensions of the discharge unit. This object is met, according to the invention, in that exclusively suitably shaped vacuum insulation areas which have the shape of an annular gap and which are formed depending on the product of gas pressure (p) and interelectrode distance (d) between the cathode and anode are provided for insulating the cathode and anode from one another in a cylindrically symmetric electrode arrangement for reliable suppression of electron arcing.
摘要翻译： 本发明涉及一种用于产生基于气体放电等离子体的强烈的短波长辐射的装置。 本发明的目的是发现基于气体放电等离子体产生强烈的短波长辐射，特别是EUV辐射的新型可能性，其能够实现电极系统的长寿命以及辐射源的高总效率而没有 大大增加了放电单元的尺寸。 根据本发明，符合本发明的目的在于，具有环形间隙形状的完全合适形状的真空绝缘区域，其取决于气体压力（p）和阴极和（d）之间的电极间距离（d）的乘积而形成 阳极被提供用于将阴极和阳极彼此隔离成圆柱形对称电极布置，以可靠地抑制电子弧。
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3.发明授权Arrangement for the generation of intensive short-wavelength radiation based on a gas discharge plasma 有权基于气体放电等离子体产生强烈的短波长辐射的布置公开(公告)号：US07488962B2
公开(公告)日：2009-02-10
申请号：US11421144
申请日：2006-05-31
IPC分类号： G21K5/02
摘要： The invention is directed to an arrangement for the generation of intensive short-wavelength radiation based on a gas discharge plasma. It is the object of the invention to find a novel possibility for generating intensive short-wavelength radiation, particularly EUV radiation, based on a gas discharge plasma which achieves a long life of the electrode system along with a high total efficiency of the radiation source without substantially increasing the dimensions of the discharge unit. This object is met, according to the invention, in that exclusively suitably shaped vacuum insulation areas which have the shape of an annular gap and which are formed depending on the product of gas pressure (p) and interelectrode distance (d) between the cathode and anode are provided for insulating the cathode and anode from one another in a cylindrically symmetric electrode arrangement for reliable suppression of electron arcing.
摘要翻译： 本发明涉及一种用于产生基于气体放电等离子体的强烈的短波长辐射的装置。 本发明的目的是发现基于气体放电等离子体产生强烈的短波长辐射，特别是EUV辐射的新型可能性，其能够实现电极系统的长寿命以及辐射源的高总效率而没有 大大增加了放电单元的尺寸。 根据本发明，符合本发明的目的在于，具有环形间隙形状的完全合适形状的真空绝缘区域，其取决于气体压力（p）和阴极和（d）之间的电极间距离（d）的乘积而形成 阳极被提供用于将阴极和阳极彼此隔离成圆柱形对称电极布置，以可靠地抑制电子弧。
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公开(公告)号：US20080265779A1
公开(公告)日：2008-10-30
申请号：US12041121
申请日：2008-03-03
IPC分类号： H05H1/00
摘要： The present invention is directed to an arrangement for switching high electric currents by way of a gas discharge at high voltages or for generating gas discharge plasma emitting EUV radiation. It is the object of the invention to find a novel possibility for generating a hollow cathode plasma that permits a longer life of the cathodes of short wavelength-emitting gas discharge radiation sources and pseudospark switches, also in high-power operation. This object is met in that the metal wall between the hollow cathode space and the discharge space has a thickness on the order of the centimeter range so that the openings of the metal wall change into relatively long channels and in that substantially radially extending cooling channels are introduced in the metal wall to reduce the ion erosion of the metal wall of the hollow cathode through efficient cooling.
摘要翻译： 本发明涉及一种用于通过高压气体放电或用于产生气体放电等离子体发射EUV辐射来切换高电流的装置。 本发明的目的是发现一种产生中空阴极等离子体的新颖可能性，其允许短波长发射气体放电辐射源和伪脉冲开关的阴极在大功率操作中寿命更长。 满足这个目的在于，中空阴极空间和放电空间之间的金属壁具有大约厘米范围的厚度，使得金属壁的开口变成相对较长的通道，并且基本上径向延伸的冷却通道是 引入金属壁，以通过有效的冷却来减少空心阴极的金属壁的离子侵蚀。
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5.发明授权Arrangement for generating pulsed currents with a high repetition rate and high current strength for gas discharge pumped radiation sources 有权用于产生脉冲电流的布置，具有高重复率和高电流强度，用于气体放电泵浦辐射源公开(公告)号：US07072370B2
公开(公告)日：2006-07-04
申请号：US11020749
申请日：2004-12-22
申请人： Vladimir Korobochko , Denis Bolshukhin , Lutz Dippmann , Spencer Merz , Hubertus Von Bergmann , Juergen Kleinschmidt
发明人： Vladimir Korobochko , Denis Bolshukhin , Lutz Dippmann , Spencer Merz , Hubertus Von Bergmann , Juergen Kleinschmidt
IPC分类号： H01S3/00
摘要： The invention is directed to an arrangement for generating pulsed currents for gas discharge pumped radiation sources, particularly with high repetition rates and high current strengths for generating plasma emitting EUV radiation. The object of the invention, to find a novel possibility for generating pulsed high-energy currents for a gas discharge pumped radiation source which permits a stable generation of high voltage and a reliable resetting of voltage using simple circuitry, is met according to the invention in that the charging circuit is an LC inversion charging circuit which communicates with a DC voltage source that provides only one half of the high voltage required for the gas discharge, wherein the inversion charging circuit has a capacitor bank with a first capacitor arranged directly parallel to the DC voltage source and a second capacitor which contributes after simultaneous charging to the recharging of the first capacitor by a triggered switch by a saturable recharging inductor for recharging the first capacitor, as a result of which the full high voltage required for discharging is provided in the capacitor bank.
摘要翻译： 本发明涉及一种用于产生气体放电泵浦辐射源的脉冲电流的装置，特别是具有高重复率和高电流强度用于产生等离子体发射EUV辐射。 本发明的目的是为了找到用于产生气体放电泵浦辐射源的脉冲高能电流的新型可能性，其允许使用简单电路稳定地产生高电压和可靠的电压复位，根据本发明， 所述充电电路是与仅提供气体放电所需的高电压的一半的直流电压源进行通信的LC反相充电电路，其中所述反相充电电路具有电容器组，所述电容器组具有直接平行于所述第一电容器 直流电压源和第二电容器，其在通过用于再充电第一电容器的可饱和充电电感器的触发开关同时充电到第一电容器的充电之后起作用，从而在第一电容器中提供放电所需的全部高电压 电容器组。
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6.发明申请Arrangement for generating pulsed currents with a high repetition rate and high current strength for gas discharge pumped radiation sources 有权用于产生脉冲电流的布置，具有高重复率和高电流强度，用于气体放电泵浦辐射源公开(公告)号：US20050200304A1
公开(公告)日：2005-09-15
申请号：US11020749
申请日：2004-12-22
申请人： Vladimir Korobochko , Denis Bolshukhin , Lutz Dippmann , Spencer Merz , Hubertus Bergmann , Juergen Kleinschmidt
发明人： Vladimir Korobochko , Denis Bolshukhin , Lutz Dippmann , Spencer Merz , Hubertus Bergmann , Juergen Kleinschmidt
摘要： The invention is directed to an arrangement for generating pulsed currents for gas discharge pumped radiation sources, particularly with high repetition rates and high current strengths for generating plasma emitting EUV radiation. The object of the invention, to find a novel possibility for generating pulsed high-energy currents for a gas discharge pumped radiation source which permits a stable generation of high voltage and a reliable resetting of voltage using simple circuitry, is met according to the invention in that the charging circuit is an LC inversion charging circuit which communicates with a DC voltage source that provides only one half of the high voltage required for the gas discharge, wherein the inversion charging circuit has a capacitor bank with a first capacitor arranged directly parallel to the DC voltage source and a second capacitor which contributes after simultaneous charging to the recharging of the first capacitor by a triggered switch by a saturable recharging inductor for recharging the first capacitor, as a result of which the full high voltage required for discharging is provided in the capacitor bank.
摘要翻译： 本发明涉及一种用于产生气体放电泵浦辐射源的脉冲电流的装置，特别是具有高重复率和高电流强度用于产生等离子体发射EUV辐射。 本发明的目的是为了找到用于产生气体放电泵浦辐射源的脉冲高能电流的新型可能性，其允许使用简单电路稳定地产生高电压和可靠的电压复位，根据本发明， 所述充电电路是与仅提供气体放电所需的高电压的一半的直流电压源进行通信的LC反相充电电路，其中所述反相充电电路具有电容器组，所述电容器组具有直接平行于所述第一电容器 直流电压源和第二电容器，其在通过用于再充电第一电容器的可饱和充电电感器的触发开关同时充电到第一电容器的充电之后起作用，从而在第一电容器中提供放电所需的全部高电压 电容器组。
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公开(公告)号：US09170505B2
公开(公告)日：2015-10-27
申请号：US12254272
申请日：2008-10-20
CPC分类号： G03F7/70916 , G03F7/70033 , G03F7/70083 , H05G2/003
摘要： The invention is directed to an arrangement for generating EUV radiation particularly for source modules in exposure installations for EUV lithography for semiconductor chip fabrication. The object of the invention, to find a novel possibility for realizing an EUV source module which appreciably improves the ratio of resources to results in the transfer of radiation from the primary source location (plasma 3) to the secondary source location (output opening (6) of the source module (1)/intermediate focus plane (62)), is met according to the invention in that the plasma (3) is formed as a volume emitter for direct illumination of the output opening (6) without collector optics (5), and the transverse dimension (d) of the plasma (3) is greater than the diameter (D) of the output opening (6), wherein the extent to which the diameter is exceeded depends on the distance (L) between the plasma (3) and the output opening (6) and on the numerical aperture (NA) of the illumination system downstream.
摘要翻译： 本发明涉及一种用于产生EUV辐射的装置，特别是用于用于半导体芯片制造的EUV光刻的曝光装置中的源模块。 本发明的目的是找到一种实现EUV源模块的新型可能性，其明显地改善了资源的比例，导致辐射从主源位置（等离子体3）到次级源位置（输出开口6 ）源于根据本发明的源模块（1）/中间聚焦平面（62）），其中等离子体（3）形成为用于直接照射输出开口（6）的体积发射器，而没有集光器光学器件 5），等离子体（3）的横向尺寸（d）大于输出开口（6）的直径（D），其中直径超过的范围取决于两者之间的距离（L） 等离子体（3）和输出开口（6）以及下游照明系统的数值孔径（NA）。
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公开(公告)号：US20090101850A1
公开(公告)日：2009-04-23
申请号：US12254272
申请日：2008-10-20
IPC分类号： G01J3/10
CPC分类号： G03F7/70916 , G03F7/70033 , G03F7/70083 , H05G2/003
摘要： The invention is directed to an arrangement for generating EUV radiation particularly for source modules in exposure installations for EUV lithography for semiconductor chip fabrication. The object of the invention, to find a novel possibility for realizing an EUV source module which appreciably improves the ratio of resources to results in the transfer of radiation from the primary source location (plasma 3) to the secondary source location (output opening (6) of the source module (1)/intermediate focus plane (62)), is met according to the invention in that the plasma (3) is formed as a volume emitter for direct illumination of the output opening (6) without collector optics (5), and the transverse dimension (d) of the plasma (3) is greater than the diameter (D) of the output opening (6), wherein the extent to which the diameter is exceeded depends on the distance (L) between the plasma (3) and the output opening (6) and on the numerical aperture (NA) of the illumination system downstream.
摘要翻译： 本发明涉及一种用于产生EUV辐射的装置，特别是用于用于半导体芯片制造的EUV光刻的曝光装置中的源模块。 本发明的目的是找到一种实现EUV源模块的新型可能性，其明显地改善了资源的比例，导致辐射从主源位置（等离子体3）到次级源位置（输出开口6 ）源于根据本发明的源模块（1）/中间聚焦平面（62）），其中等离子体（3）形成为用于直接照射输出开口（6）的体积发射器，而没有集光器光学器件 5），等离子体（3）的横向尺寸（d）大于输出开口（6）的直径（D），其中直径超过的范围取决于两者之间的距离（L） 等离子体（3）和输出开口（6）以及下游照明系统的数值孔径（NA）。
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9.发明授权Method and arrangement for the adjustment of characteristics of a beam bundle of high-energy radiation emitted from a plasma 有权用于调整从等离子体发射的高能辐射束束的特性的方法和装置公开(公告)号：US08410422B2
公开(公告)日：2013-04-02
申请号：US13436923
申请日：2012-03-31
申请人： Denis Bolshukhin , Alexander Christian Keller , Max Christian Schuermann , Guido Schriever , Imtiaz Ahmad , Juergen Kleinschmidt
发明人： Denis Bolshukhin , Alexander Christian Keller , Max Christian Schuermann , Guido Schriever , Imtiaz Ahmad , Juergen Kleinschmidt
CPC分类号： G03F7/70133 , G01J1/4257 , G01J1/429 , G03F7/70141 , G03F7/70166 , G03F7/7085 , H05G2/001
摘要： The invention is related to the adjustment of characteristics of a beam bundle of high-energy radiation emitted from a plasma, particularly for applications in semiconductor lithography. For acquiring and adjusting characteristics of a beam bundle of high-energy radiation emitted from a plasma and focused by means of collector optics, an intensity distribution of the radiation is acquired over the cross section of a convergent beam bundle in a measuring plane perpendicular to the optical axis in front of an intermediate focus of the collector optics, and intensity values are recorded in defined sectors for a quantity of reception regions of a measuring device which are aligned with different radii concentric to the optical axis, and measured quantities and control variables are determined from a comparison of the intensity values of different sectors for aligning the collector optics.
摘要翻译： 本发明涉及从等离子体发射的高能辐射的束束的特性的调整，特别是在半导体光刻中的应用。 为了获取和调整从等离子体发射并通过集光器光学聚焦的高能辐射束束的特性，在与垂直于等离子体的测量平面中的会聚束束的横截面上获取辐射的强度分布 光轴在收集器光学器件的中间焦点前方，并且强度值被记录在与光轴同心的不同半径对准的测量装置的接收区域的数量的限定扇区中，并且测量的量和控制变量是 由不同扇区的强度值的比较确定，用于对准收集器光学器件。
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10.发明授权Method and arrangement for stabilizing the average emitted radiation output of a pulsed radiation source 有权用于稳定脉冲辐射源的平均发射辐射输出的方法和装置公开(公告)号：US07974321B2
公开(公告)日：2011-07-05
申请号：US11949924
申请日：2007-12-04
IPC分类号： H01S3/10
CPC分类号： G03B27/72 , G01J1/18 , G01J1/4257 , G01J11/00 , G03F7/70041 , G03F7/70558
摘要： The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (Δti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.
摘要翻译： 本发明涉及用于稳定脉冲辐射源的平均发射辐射输出的方法和装置。 本发明的目的是找到一种用于稳定脉冲辐射源的平均发射辐射输出的新颖可能性，即使当没有足够可靠的操纵变量来影响发射的脉冲能量（Ei）时，也能够进行可靠的调节。 根据本发明，满足目的在于测量当前辐射脉冲的单个脉冲能量（Ei）的目的，确定当前独立脉冲能量（Ei）与先前确定的目标值（E0）的偏差，以及 根据当前个体脉冲能量（Ei）与脉冲能量的目标值（E0）之间的偏差大小来控制触发下一个辐射脉冲之前的脉冲间隔（＆Dgr; ti + 1）。
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