公开(公告)号：US11552213B2

公开(公告)日：2023-01-10

申请号：US16943186

申请日：2020-07-30

Applicant: WAVELORD CO., LTD.

Inventor： Sang Jeong An

IPC: H01L23/00 ,  H01L33/00 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L33/48 ,  H01L21/683 ,  H01L33/64 ,  H01L33/02 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62

Abstract: A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

公开(公告)号：US12107194B2

公开(公告)日：2024-10-01

申请号：US17417904

申请日：2019-12-27

Applicant: WAVELORD CO., LTD.

Inventor： Sang Jeong An

IPC: H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64

CPC classification number: H01L33/486 ,  H01L33/60 ,  H01L33/62 ,  H01L33/647 ,  H01L33/641

Abstract: Disclosed is a semiconductor light emitting device comprising a semiconductor light emitting chip having electrodes; a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and conductive parts provided in the through holes for electrical communication with the electrodes.

公开(公告)号：US12063023B2

公开(公告)日：2024-08-13

申请号：US17434823

申请日：2020-02-28

Applicant: WAVELORD CO., LTD.

Inventor： Sang Jeong An

IPC: H03H3/02 ,  C23C14/06 ,  C23C16/30 ,  C30B23/02 ,  C30B25/18 ,  C30B29/40 ,  H10N30/00 ,  H10N30/076 ,  H10N30/079 ,  H10N30/853

CPC classification number: H03H3/02 ,  C23C14/0617 ,  C23C16/303 ,  C30B23/025 ,  C30B25/18 ,  C30B29/406 ,  H10N30/076 ,  H10N30/079 ,  H10N30/708 ,  H10N30/853 ,  Y10T29/42

Abstract: Disclosed is a method for manufacturing a piezoelectric AlxGa1-xN (0.5≤x≤1) thin film, comprising: forming a stress control layer comprised of a Group III nitride on a silicon substrate by chemical vapor deposition (CVD); and depositing a piezoelectric AlxGa1-xN (0.5≤x≤1) thin film on the stress control layer, the thin film being deposited by PVD at 0.3 Tm (Tm is melting temperature of a piezoelectric thin film material) or higher. Further, a method for manufacturing a device in conjunction with piezoelectric AlxGa1-xN (0.5≤x≤1) thin films is provided.