公开(公告)号：US3920495A

公开(公告)日：1975-11-18

申请号：US39269873

申请日：1973-08-29

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： ROBERTS JOHN S

IPC: G02B6/28 ,  G02B6/42 ,  H01L31/111 ,  H01L7/00

CPC classification number: H01L31/1113 ,  G02B6/2817 ,  G02B6/4202 ,  G02B6/4295

Abstract: This disclosure is concerned with a method of forming light reflective etch pits preferably having a tetrahedral pattern, in a surface, preferably a (111) surface, of a body of semiconductor material. The body of semiconductor material, preferably silicon, has two opposed major surfaces which are substantially parallel, the body is divided into four alternate regions of opposite type conductivity, the two end regions being emitter regions and the two middle regions being base regions when the body is employed as a light activated four region switch. Activating light enters at one major surface of the body, passes entirely through the body to the opposed major surface where light reflective etch pits cause the light to pass back through the body.

Abstract translation: 本公开涉及在半导体材料体的表面，优选[111]表面中形成优选具有四面体图案的光反射蚀刻凹坑的方法。 半导体材料体（优选硅）具有基本上平行的两个相对的主表面，其主体被分为具有相反导电性的四个交替区域，两个端部区域是发射极区域，并且两个中间区域是当主体 被用作光激活四区域开关。 活化光进入身体的一个主表面，完全穿过身体到相对的主要表面，其中光反射蚀刻凹坑使得光通过身体返回。

公开(公告)号：US3590338A

公开(公告)日：1971-06-29

申请号：US3590338D

申请日：1969-11-28

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： ROBERTS JOHN S

IPC: G02B6/42 ,  H01L21/60 ,  H01L23/48 ,  H01L23/488 ,  H01L31/0203 ,  H01L31/111 ,  H01L15/00

CPC classification number: H01L24/01 ,  G02B6/4202 ,  G02B6/4248 ,  G02B6/4295 ,  H01L23/488 ,  H01L24/33 ,  H01L24/72 ,  H01L24/83 ,  H01L31/0203 ,  H01L31/1113 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/00

Abstract: This disclosure relates to a new and novel encapsulating package for a light-activated or light-sensitive semiconductor device. The various problems associated with introducing light through the top or cap of the encapsulating case especially the establishment of a hermetic seal are overcome by introducing light through an aperture in the base member of the case and establishing a hermetic seal by employing a soft silver layer which is disposed on the surface of the base member in contact with the semiconductor wafer.

公开(公告)号：US3585454A

公开(公告)日：1971-06-15

申请号：US3585454D

申请日：1969-04-01

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： ROBERTS JOHN S

IPC: H01L23/051 ,  H01L31/111 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L23/051 ,  H01L31/1113 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This disclosure relates to a new and novel encapsulating package for a light activated or light sensitive semiconductor device. The various problems associated with introducing light through the top or cap of the encapsulating case are overcome by introducing light through an aperture in the base member of the case.

公开(公告)号：US3893153A

公开(公告)日：1975-07-01

申请号：US43237474

申请日：1974-01-10

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： PAGE DERRICK J ,  ROBERTS JOHN S

IPC: H01L31/111 ,  H01L9/12

CPC classification number: H01L31/1113

Abstract: A light activated thyristor with high dI/dt capability is provided by disposing first and second thyristors, one a primary and one a pilot thyristor, in a semiconductor body having first and second major surfaces. The two thristors have common cathodebase, anode-base and anode-emitter regions, and have spaced apart cathode-emitter regions adjoining the first major surface of the body. The common cathode-base region adjoins the first major surface between the two thyristors as well as intermittently of the cathode-emitter region of the first thyristor to form shunts. The first major surface at the cathode-emitter region of the second thyristor is adapted for activation of the second thyristor therethrough with electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body. The cathode electrode makes ohmic contact with the cathode-emitter region of the first thyristor and the common cathode-base region at the shunts, and the anode electrode makes ohmic contact with the common anode-emitter regions. A floating contact also makes ohmic contact to the cathode-emitter region of the second thyristor and the common cathode-base region between the thyristors, while leaving exposed substantial portions of the first major surface adjoining the cathode-emitter region of the second thyristor.

Abstract translation: 具有高dI / dt能力的光激活晶闸管通过在具有第一和第二主表面的半导体本体中布置第一和第二晶闸管（一个一个和一个导频晶闸管）来提供。 这两个支架具有共同的阴极基极，阳极基极和阳极 - 发射极区域，并且具有与主体的第一主表面相邻的间隔开的阴极 - 发射极区域。 公共阴极基区域与两个晶闸管之间的第一主表面相邻，以及间歇地连接第一晶闸管的阴极 - 发射极区域以形成分路。 第二晶闸管的阴极 - 发射极区域处的第一主表面适于通过其基本上对应于半导体本体的能带隙的波长的电磁辐射激活第二晶闸管。 阴极与分流器的第一晶闸管和公共阴极 - 基极区域的阴极 - 发射极区域欧姆接触，并且阳极电极与公共阳极 - 发射极区域欧姆接触。 浮动接触还使第二晶闸管的阴极 - 发射极区域和晶闸管之间的公共阴极 - 基极区域欧姆接触，同时使第一主表面的暴露的大部分与第二晶闸管的阴极 - 发射极区域邻接。

公开(公告)号：US3590344A

公开(公告)日：1971-06-29

申请号：US3590344D

申请日：1969-06-20

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： ROBERTS JOHN S ,  MUSS DANIEL R

IPC: G02B6/28 ,  G02B6/42 ,  H01L23/051 ,  H01L31/111 ,  H01L11/10

CPC classification number: H01L31/1113 ,  G02B6/2817 ,  G02B6/4202 ,  G02B6/4295 ,  H01L23/051 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This disclosure is concerned with a four region light activated controlled rectifier. The controlled rectifier, which comprises in part a body of silicon having four alternate regions of opposite type conductivity, the two end regions being emitter regions and two middle regions being base regions, is ''''turnedon'''' by light. The light enters at one major surface of the body passes entirely through the body to the opposed major surface where reflective means causes the light to pass back through the body. The reflection of the light causes the rectifier to be ''''turned-on'''' faster than possible with prior art devices.

公开(公告)号：US3872493A

公开(公告)日：1975-03-18

申请号：US28368472

申请日：1972-08-25

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： ROBERTS JOHN S ,  CRESSWELL MICHAEL W

IPC: H01L29/74 ,  H01L21/00 ,  H01L21/331 ,  H01L29/73 ,  H01L29/744 ,  H01L11/10 ,  H01L15/00

CPC classification number: H01L21/00

Abstract: Semiconductor devices such as silicon thyristors are provided with increased blocking voltage without significantly increasing the forward voltage drop of the device. Bulk portions of the device are masked against radiation, such as an electron radiation, and peripheral portions of the device are irradiated with suitable radiation such as electron radiation.

Abstract translation: 诸如硅晶闸管的半导体器件具有增加的阻塞电压，而不会显着增加器件的正向压降。 器件的大部分部分被掩蔽在诸如电子辐射的辐射之上，并且用合适的辐射如电子辐射照射器件的外围部分。

公开(公告)号：US3662458A

公开(公告)日：1972-05-16

申请号：US3662458D

申请日：1969-06-20

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： FORMIGONI NAPOLEAN P ,  ROBERTS JOHN S

IPC: H01L23/485 ,  H01L29/45 ,  B01J17/00 ,  H01J1/14 ,  H01J5/02

CPC classification number: H01L29/45 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

Abstract: Tantalum and gold alloy electrical contacts are applied to selected areas of a body of silicon carbide. An oxidized surface is first produced on the silicon carbide body and removed from those portions of the surface to which the alloy contact of the body is to be applied. A thin layer of aluminum is deposited on only the oxidized surface. Thin films of tantalum and gold are alternately deposited on the exposed surface of the silicon carbide. Any tantalum and gold deposited on the aluminum forms an alloy which is readily removed by an etchant which attacks tantalum-gold-aluminum intermetallics but will not attack the tantalum-gold alloy electrical contact of the body.

Abstract translation: 钽和金合金电触点施加到碳化硅体的选定区域。 首先在碳化硅本体上产生氧化表面，并从要施加的主体的合金接触面的那些部分去除。 仅在氧化的表面上沉积薄层的铝。 钽和金的薄膜交替沉积在碳化硅的暴露表面上。 沉积在铝上的任何钽和金形成合金，该合金易于被蚀刻剂除去，这种腐蚀剂侵蚀了钽 - 金 - 铝金属间化合物，但不会侵蚀体内的钽 - 金合金电接触。