Interferential position measuring arrangement
    1.
    发明授权
    Interferential position measuring arrangement 有权
    干涉位置测量装置

    公开(公告)号:US07154609B2

    公开(公告)日:2006-12-26

    申请号:US10635422

    申请日:2003-08-06

    IPC分类号: G01B9/02

    CPC分类号: G01D5/38

    摘要: An interferential position measuring arrangement including a light source, which emits a beam of rays and an optical element, which converts the beam of rays emitted by the light source into an incoming beam of rays. A scale grating which splits the incoming beam of rays into a first partial beam of rays and a second partial beam of rays. A first scanning grating that causes splitting of the first partial beam of rays and a second scanning grating that causes splitting of the second partial beam of rays, wherein a periodically modulated interferential fringe pattern with definite spatial interferential fringe pattern period results in a detection plane. A detection arrangement which causes splitting of light entering through the detection arrangement into at least three different spatial directions and optoelectronic detector elements arranged in the at least three spatial directions for detecting phase-shifted scanning signal.

    摘要翻译: 一种包括发射光束的光源和光学元件的干涉位置测量装置,其将由光源发射的光线转换成输入的光束。 将光束入射到第一部分射线束和第二部分射线束的刻度光栅。 使第一部分光束分裂的第一扫描光栅和引起第二部分光束分裂的第二扫描光栅,其中具有确定的空间干涉条纹图案周期的周期性调制的干涉条纹图案导致检测平面。 一种检测装置,其使通过检测装置进入的光分裂成至少三个不同的空间方向,并且在至少三个空间方向上布置的光电检测器元件用于检测相移的扫描信号。

    Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate
    2.
    发明授权
    Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate 有权
    用于降低半导体衬底表面的反应性和用于评估半导体衬底的电性能的方法

    公开(公告)号:US06511921B1

    公开(公告)日:2003-01-28

    申请号:US09229137

    申请日:1999-01-12

    IPC分类号: H01L2131

    摘要: A process for effectively reducing reactivity of a surface of a semiconductor substrate is described. The process includes: (1) oxidizing in an oxidizing environment the semiconductor substrate surface, the semiconductor substrate having a dopant concentration profile that extends across a depth of the semiconductor substrate; and (2) annealing the semiconductor substrate surface in an inert gas environment, wherein the oxidizing and the annealing of the semiconductor substrate surface are performed at a temperature that is sufficiently low to substantially preserve the dopant concentration profile in the semiconductor substrate. A surface passivation apparatus is also described. The apparatus includes: a heating source for heating a substrate surface; an ozone generator; and a chamber for exposing a substrate surface to an oxidizing environment that includes a gas composition, wherein the ozone generator is configured to produce ozone within the chamber using the gas composition.

    摘要翻译: 描述了有效降低半导体衬底的表面的反应性的方法。 该方法包括:(1)在氧化环境中氧化半导体衬底表面,半导体衬底具有穿过半导体衬底的深度延伸的掺杂剂浓度分布; 和(2)在惰性气体环境中退火半导体衬底表面,其中半导体衬底表面的氧化和退火在足够低的温度下进行,从而基本上保持半导体衬底中的掺杂剂浓度分布.A表面钝化 还描述了装置。 该装置包括:用于加热基板表面的加热源; 臭氧发生器; 以及用于将衬底表面暴露于包括气体组合物的氧化环境的室,其中所述臭氧发生器构造成使用所述气体组合物在所述室内产生臭氧。

    Optical position indicator
    3.
    发明授权
    Optical position indicator 失效
    光学位置指示器

    公开(公告)号:US6151128A

    公开(公告)日:2000-11-21

    申请号:US242705

    申请日:1999-06-21

    申请人: Walter Huber

    发明人: Walter Huber

    IPC分类号: G01B11/00 G01D5/38 G01B11/14

    CPC分类号: G01D5/38

    摘要: An optical position measuring system that has a scale graduation with a graduation period, TP, and connected with a first object that has a graduation and a scanning unit connected to a second object that moves relative to the first object, so that there is a displacement between the scale graduation and the scanning unit. The scanning unit includes a scanning plate with a first and second scanning fields that are arranged offset from each other in a measuring direction (x) by a distance, D. A first deflection element associated with the first scanning field and a second deflection element associated with the second scanning field, wherein the first and second deflection elements spatially separate the phase-shifted partial signals from the first and second scanning fields. First and second detector elements are placed downstream of the scanning plate and associated with the first scanning field. Third and fourth detector elements are placed downstream of the scanning plate and associated with the second scanning field. The first and second scanning fields are arranged on the scanning plate so that the offset distance D=TP/2*(N+1/4), wherein N=0, 1, 2, . . .

    摘要翻译: PCT No.PCT / EP97 / 05211 Sec。 371 1999年6月21日第 102(e)1999年6月21日PCT PCT 1997年9月23日PCT公布。 第WO98 / 16802号公报 日期1998年04月23日具有刻度刻度TP,并与具有刻度的第一物体连接的光学位置测量系统和连接到相对于第一物体移动的第二物体的扫描单元, 在刻度刻度和扫描单元之间存在位移。 扫描单元包括扫描板,其具有在测量方向(x)上彼此偏移一定距离D的第一和第二扫描场。D.与第一扫描场相关联的第一偏转元件和与第一偏转元件相关联的第二偏转元件 利用第二扫描场,其中第一和第二偏转元件在空间上将相移的部分信号与第一和第二扫描场进行空间分离。 第一和第二检测器元件被放置在扫描板的下游并与第一扫描场相关联。 第三和第四检测器元件放置在扫描板的下游并与第二扫描场相关联。 第一扫描区域和第二扫描区域布置在扫描板上,使得偏移距离D = TP / 2 *(N ++ E,fra 1/4 + EE),其中N = 0,1,2。 。 。

    Protective helmet
    4.
    发明授权
    Protective helmet 失效
    防护头盔

    公开(公告)号:US5913412A

    公开(公告)日:1999-06-22

    申请号:US716286

    申请日:1996-09-20

    IPC分类号: A42B3/10 A42B3/12 A42B3/28

    CPC分类号: A42B3/122 A42B3/28

    摘要: Protective helmet (10), in particular for motorcyclists or the like, with an outer casing formed in particular as an outer shell (11) and a lining (12) which is accommodated in the outer casing and lines the latter at least in areas. At least in partial regions, the lining (12) comprises a cushion which can be evacuated of air, is divided into individual segments (13, 14, 15, 16) and is filled with resilient packing (38).

    摘要翻译: PCT No.PCT / EP95 / 01056 Sec。 371日期:1996年12月5日 102(e)日期1996年12月5日PCT 1995年3月21日PCT公布。 WO95 / 25446 PCT出版物 日期1995年9月28日保护头盔(10),特别是用于摩托车手等,具有特别形成为外壳(11)的外壳,以及容纳在外壳中的管线(12) 至少在地区。 至少在部分区域中,衬里(12)包括可以抽空空气的衬垫,被分成单独的段(13,14,15,16)并填充有弹性填料(38)。

    Position measuring apparatus and method of use thereof
    6.
    发明授权
    Position measuring apparatus and method of use thereof 失效
    位置测量装置及其使用方法

    公开(公告)号:US5206704A

    公开(公告)日:1993-04-27

    申请号:US663429

    申请日:1991-03-01

    IPC分类号: G01B11/00 G01B11/02 G01D5/38

    CPC分类号: G01D5/38 G01B11/026

    摘要: A position measuring apparatus includes an optical instrument placed in a first plane, a first diffraction grid placed in a second plane, parallel to the first plane, a retro-reflecting element, a second diffraction grid, and an optical element, preferably placed in the first plane. The optical instrument splits a beam of light into at least two divergent partial beams which are diffracted by the first diffraction grid into parallel partial beams. The parallel partial beams are conducted through the retro-reflecting element and then impinge onto the second diffraction grid. The second diffraction grid diffracts the partial beams and causes them to interfere with each other at the optical element. A detection device measures a change (.DELTA.OPD) of path difference of the partial beams which is directly proportional to the change in distance between the first and second planes. This change (.DELTA.OPD) of the path difference can be detected by the detection device as a light-dark modulation at the optical element.

    摘要翻译: 位置测量装置包括放置在第一平面中的光学仪器,放置在与第一平面平行的第二平面中的第一衍射栅格,后向反射元件,第二衍射栅格和光学元件,优选地放置在 第一架飞机 光学仪器将光束分成由第一衍射栅格衍射成平行的部分光束的至少两个发散的部分光束。 平行的部分光束通过后向反射元件传导,然后撞击到第二衍射光栅上。 第二衍射网衍射部分光束并使它们在光学元件处彼此干涉。 检测装置测量与第一和第二平面之间的距离变化成正比的部分光束的路径差的变化(DELTA OPD)。 路径差的这种变化(DELTA OPD)可以由检测装置检测为光学元件处的暗暗调制。

    Semiconductor wafer fabrication with improved control of internal
gettering sites using rapid thermal annealing
    7.
    发明授权
    Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing 失效
    采用快速热退火改善内部吸杂位置控制的半导体晶圆制造

    公开(公告)号:US4851358A

    公开(公告)日:1989-07-25

    申请号:US154759

    申请日:1988-02-11

    申请人: Walter Huber

    发明人: Walter Huber

    摘要: The concentration of internal gettering sites within a semiconductor wafer is controlled by two-step thermal processing. In a concentration reduction phase, the wafer is rapidly heated to an elevated temperature in the range from about 900.degree. to 1350.degree. C., resulting in the partial or total dissolution of precipitable impurities within the wafer. In a concentration enhancement step, the wafers are subjected to a relatively low temperature anneal process where the density of potential internal gettering sites is increased. By properly controlling the processing temperatures and treatment times, the two steps may be performed in either order to obtain wafers having internal gettering site concentrations within a desired range.

    摘要翻译: 半导体晶片内部吸杂位置的浓度由两步热处理控制。 在浓缩还原阶段,将晶片快速加热到约900℃至1350℃的升高温度,导致可沉淀杂质在晶片内部分或完全溶解。 在浓缩度增强步骤中,晶片经历相对低温退火过程,其中潜在的内部吸杂位点的密度增加。 通过适当地控制处理温度和处理时间,可以以任何顺序执行两个步骤,以获得在所需范围内具有内部吸杂位点浓度的晶片。

    Mixing apparatus
    8.
    发明授权
    Mixing apparatus 失效
    混合装置

    公开(公告)号:US4333356A

    公开(公告)日:1982-06-08

    申请号:US140536

    申请日:1980-04-15

    摘要: A mixing apparatus utilizes piston burettes driven by stepping motors as metering pumps to deliver component liquids to be mixed into a liquid stream in a selectable constant mixing ratio. A computer-based automatic control system is used to control the regulated take up of the respective components by the burettes and the delivery of them to a mixing device. The computer calculates the rates of stepping of the respective motors so that each component is delivered over the same period of time and at a respective uniform rate. The computer also controls associated switching valves via an interface device and may be a desk top machine with keyboard or pre-programmed data input.

    摘要翻译: 混合装置利用由步进电动机驱动的活塞滴定管作为计量泵,以可选择的恒定混合比将组分液体输送到液体流中。 基于计算机的自动控制系统用于通过滴定管控制各组分的调节吸收并将其输送到混合装置。 计算机计算各个电动机的步进速度,使得每个组件在相同的时间段内以各自的均匀速率递送。 计算机还通过接口设备控制相关的切换阀,并且可以是具有键盘或预编程数据输入的桌面机器。