摘要:
Pixel elements capable of imaging spatial intensity variations within themselves, and displays comprised of such elements, are described. The pixel elements include a resistance layer disposed between at least one set of electrodes. Over that resistance layer is a liquid crystal material. Over that liquid crystal material is a field electrode. In operation a voltage, whose components are referenced to the field electrode, is applied across the resistance layer. The resulting current flow induces a spatially varying electric field between the field electrode and the resistance layer. That spatially varying electric field results in a corresponding response by the liquid crystal layer which results in a spatially varying light transmission through the liquid crystal material. By varying the voltage across the resistance layer and/or the voltage applied to the field electrode varying amounts of light transmission can be achieved.
摘要:
An image sensor array has overlapping responsive zones for detecting incident radiation. The sensor array includes a plurality of collection electrodes for sensing charge and a charge distribution layer in contact with the collection electrodes. The charge distribution layer is configured to distribute charge generated from incident radiation to more than one collection electrode, effectively providing overlapping responsive zones that reduce adverse aliasing effects.
摘要:
Sensor elements which are capable of sensing illumination edges with subpixel accuracy are described. The sensor elements include a plurality of conductive storage nodes and a plurality of collection electrodes which are in a low resistance, touching relationship with a first semiconductive material layer. A second semiconductive material layer is placed over the first such that the first and second semiconductive material layers and the storage nodes form light sensors. Near the first semiconductive layer is a gate electrode. When a first voltage is applied to the gate electrode the resistance of the first semiconductive material layer between the storage nodes and the conductive collection electrodes is high. Illumination which strikes the sensor element creates electron hole pairs which induce charges on the storage nodes. When a second voltage is applied to the gate electrode the resistance of the first semiconductive material layer between the storage nodes and the conductive collection electrodes becomes low. Charges which have accumulated onto the storage nodes can then easily flow to the conductive collection electrodes.
摘要:
Bands of predetectors (92) detect the approach of lines of glyphs (12, 14) within an image being scanned. Linear lines or arrays of glyph detectors (116, 118, 120) are sampled in accordance with the detected approach of lines of glyphs. Each detector array includes a plurality of analog glyph detectors (20, 50) which respond to the presence of glyphs with a characteristic analog output. Preferably, the glyph detectors generate a corresponding analog output of a first polarity or other characteristic in response to glyphs of a first orientation and an output of a second polarity or characteristic in response to glyphs of a second orientation. The analog signals which are characteristic of the detection of a glyph are converted into binary 1's and 0's in accordance with the polarity or other characteristic of the signals. In this manner, glyphs are detected by analog detectors and the information encoded in the glyphs is directly output as a binary signal without computer analysis of the image.
摘要:
An image detection and pixel processing system includes a plurality of detector elements for receiving an image. The detector elements are subdivided into a plurality of macrodetectors, with each macrodetector constituting four or more detector elements, and with each macrodetector providing information for determining both a total light intensity value within the macrodetector and a centroid of light intensity indicative of light intensity position within the macrodetector. An image processing assembly receives information from the plurality of macrodetectors, with the image processing assembly relating a pixel and its encompassed subpixel area to each corresponding macrodetector, and further determining the total light intensity within the pixel and the centroid of light intensity within the subpixel. The image processing assembly is capable of rendering each subpixel area as an edge when magnitude of the centroid of light intensity is greater than a predetermined threshold.
摘要:
An image detection and pixel processing system includes a plurality of position sensitive detector elements arranged to receive an image. Each position sensitive detector element provides information for determining both a total light intensity value within the position sensitive detector element and a centroid of light intensity indicative of light intensity position within the position sensitive detector element. An image processing assembly receives information from the plurality of position detector elements with the image processing assembly relating a pixel and its encompassed subpixel area to each corresponding position detector element. The total light intensity within the pixel and the centroid of light intensity within the subpixel is determined, with the image processing assembly rendering each subpixel area as an edge when magnitude of the centroid of light intensity is large.
摘要:
Resistance layer structures comprised of a plurality of conductive charge storage nodes, collection electrodes, and an electrically controllable resistance element which connects the storage nodes and the collection electrodes. The resistance of the electrically controllable resistance element can be switched between a low impedance, so as to permit a rapid charge interchange between the various storage nodes and the collection electrodes, and a high impedance, so as to permit an integration of charge onto the storage nodes. Beneficially, the electrically controllable resistance element is implemented as the active region of a metal-insulator-semiconductor device.
摘要:
The present invention encompasses a control system and method for systems of producing and consuming units. The method of the invention includes the steps of setting each producing unit to have an output responsive to an analog signal representative of a market price, and connecting each producing unit to a marketwire, with the changes in the analog signal on the marketwire representing changes in the market price resulting from inputs from the consuming units and the output response of each producing unit.
摘要:
A variable fluid flow valve is disclosed. The valve can be batch fabricated in two dimensional valve arrays, with all valves in the array being controlled in parallel to achieve high flow rates without increasing response time. Typically, each valve includes a valve housing having an aperture plate defining an elongated aperture therethrough, and an opposing plate positioned in spaced apart relationship to the aperture plate. In one embodiment a flexible film or strip is attached at its first end to the aperture plate and at its second end to the opposing plate. In another embodiment of the invention, the flexible film is attached at only one end and is free to move at the other end. In both types of valves, valve action is provided by using electrodes to variably move the flexible film from an aperture blocking to an aperture non-blocking position. The flexible film may be moved in a continuously variable manner or a discretely variable manner, depending upon the electrode configuration. Binary valves in matrixes may also be used with the elongated opening.
摘要:
A valve array system including microelectromechanical valves embedded in a dielectric substrate is disclosed. These microelectromechanical valves can be batch fabricated using resin impregnated dielectric laminates having photolithographically formed circuitry for electrical connections. Movable components of valves, including electromagnetic or electrostatically actuated membranes, flaps, or beams, can be formed from laminate material using sacrifice layers and etching.