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    Nitride semiconductor device
    6.
    发明授权
    Nitride semiconductor device 失效
    氮化物半导体器件

    公开(公告)号：US07538366B2

    公开(公告)日：2009-05-26

    申请号：US11739874

    申请日：2007-04-25

    申请人： Wataru Saito ,  Akira Yoshioka ,  Hidetoshi Fujimoto ,  Yasunobu Saito ,  Takao Noda ,  Tomohiro Nitta ,  Yorito Kakiuchi

    发明人： Wataru Saito ,  Akira Yoshioka ,  Hidetoshi Fujimoto ,  Yasunobu Saito ,  Takao Noda ,  Tomohiro Nitta ,  Yorito Kakiuchi

    IPC分类号： H01L27/088

    CPC分类号： H01L29/7787 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7783

    摘要： A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlXGa1−XN (0≦X≦1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.

    摘要翻译： 氮化物半导体器件包括：导电衬底; 设置在所述基板上的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 第二半导体层上的第三半导体层; 连接到第三半导体层的第一主电极; 连接到第三半导体层的第二主电极; 以及设置在所述第三半导体层上的控制电极。 第一半导体层由第一导电类型的AlXGa1-XN（0 <= X <= 1）制成。 第二半导体层由第一氮化物半导体制成。 第三半导体层由未掺杂或n型的具有比第一氮化物半导体更宽的带隙的第二氮化物半导体制成。

    NITRIDE SEMICONDUCTOR DEVICE
    7.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 失效
    氮化物半导体器件

    公开(公告)号：US20070254431A1

    公开(公告)日：2007-11-01

    申请号：US11739874

    申请日：2007-04-25

    申请人： Wataru Saito ,  Akira Yoshioka ,  Hidetoshi Fujimoto ,  Yasunobu Saito ,  Takao Noda ,  Tomohiro Nitta ,  Yorito Kakiuchi

    发明人： Wataru Saito ,  Akira Yoshioka ,  Hidetoshi Fujimoto ,  Yasunobu Saito ,  Takao Noda ,  Tomohiro Nitta ,  Yorito Kakiuchi

    IPC分类号： H01L29/06 ,  H01L21/8242 ,  H01L21/20

    CPC分类号： H01L29/7787 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7783

    摘要： A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlXGa1−XN (0≦X≦1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.

    摘要翻译： 氮化物半导体器件包括：导电衬底; 设置在所述基板上的第一半导体层; 设置在所述第一半导体层上的第二半导体层; 第二半导体层上的第三半导体层; 连接到第三半导体层的第一主电极; 连接到第三半导体层的第二主电极; 以及设置在所述第三半导体层上的控制电极。 第一半导体层由第一导电类型的Al x Ga 1-X N（0 <= X 1 = 1）制成。 第二半导体层由第一氮化物半导体制成。 第三半导体层由未掺杂或n型的具有比第一氮化物半导体更宽的带隙的第二氮化物半导体制成。

    Nitride semiconductor device and method for manufacturing same
    8.
    发明授权
    Nitride semiconductor device and method for manufacturing same 失效
    氮化物半导体器件及其制造方法

    公开(公告)号：US08759878B2

    公开(公告)日：2014-06-24

    申请号：US13238684

    申请日：2011-09-21

    申请人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    发明人： Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Akira Yoshioka ,  Wataru Saito

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7787

    摘要： According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion.

    摘要翻译： 根据一个实施例，氮化物半导体器件包括第一半导体，第二半导体层，第三半导体层，第四半导体层，第一电极，第二电极和第三电极。 第一，第二和第四半导体层包括氮化物半导体。 第二半导体层设置在第一半导体层上，具有不小于第一半导体层的带隙。 第三半导体层设置在第二半导体层上。 第三半导体层是GaN。 第四半导体层设置在第三半导体层上，以在第三半导体层的一部分上具有间隙，具有不小于第二半导体层的带隙。 第一电极设置在第三半导体层的一部分上。 第四半导体层不设置在该部分上。

    NITRIDE SEMICONDUCTOR DEVICE
    9.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 有权
    氮化物半导体器件

    公开(公告)号：US20130062671A1

    公开(公告)日：2013-03-14

    申请号：US13420559

    申请日：2012-03-14

    申请人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

    发明人： Wataru SAITO ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Akira Yoshioka ,  Testsuya Ohno

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/1075 ,  H01L29/1087 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/7783

    摘要： A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET.

    摘要翻译： 氮化物半导体器件包括第一半导体层，第二半导体层，导电衬底，第一电极，第二电极和控制电极。 第二半导体层直接接合到第一半导体层。 导电基板设置在电连接到第一半导体层上。 第一电极和第二电极设置在与第一半导体层相对的一侧上与第二半导体层的表面电连接。 控制电极设置在第一电极和第二电极之间的第二半导体层的表面上。 第一电极电连接到由Si形成的MOSFET的漏电极。 控制电极与MOSFET的源电极电连接。 导电基板电连接到MOSFET的栅电极。

    Nitride semiconductor device
    10.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US09082691B2

    公开(公告)日：2015-07-14

    申请号：US13619560

    申请日：2012-09-14

    申请人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    发明人： Akira Yoshioka ,  Yasunobu Saito ,  Hidetoshi Fujimoto ,  Tetsuya Ohno ,  Wataru Saito

    IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

    CPC分类号： H01L29/2003 ,  H01L29/0619 ,  H01L29/1066 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7787

    摘要： A nitride semiconductor device includes a substrate, a first Inx1Ga1-x1-y1Aly1N layer, a second Inx2Ga1-x2-y2Aly2N layer, an interlayer insulating film, a source electrode, a drain electrode, a first gate electrode, a Schottky electrode, a second gate electrode, an interconnection layer. The second Inx2Ga1-x2-y2Aly2N layer is provided on a surface of the first Inx1Ga1-x1-y1Aly1N layer. The second Inx2Ga1-x2-y2Aly2N layer has a wider band gap than the first Inx1Ga1-x1-y1Aly1N layer. The first gate electrode is provided between the source electrode and the drain electrode on a surface of the second Inx2Ga1-x2-y2Aly2N layer. The Schottky electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the first gate electrode and the drain electrode. The second gate electrode is provided on the second Inx2Ga1-x2-y2Aly2N layer between the Schottky electrode and the drain electrode. The interconnection layer electrically connects the source electrode, the Schottky electrode, and the second gate electrode.

    摘要翻译： 氮化物半导体器件包括衬底，第一In x1Ga1-x1-y1Aly1N层，第二Inx2Ga1-x2-y2Aly2N层，层间绝缘膜，源电极，漏电极，第一栅电极，肖特基电极，第二 栅电极，互连层。 第二Inx2Ga1-x2-y2Aly2N层设置在第一Inx1Ga1-x1-y1Aly1N层的表面上。 第二Inx2Ga1-x2-y2Aly2N层具有比第一Inx1Ga1-x1-y1Aly1N层更宽的带隙。 第一栅电极设置在第二Inx2Ga1-x2-y2Aly2N层的表面上的源电极和漏电极之间。 肖特基电极设置在第一栅电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 第二栅电极设置在肖特基电极和漏电极之间的第二Inx2Ga1-x2-y2Aly2N层上。 互连层电连接源电极，肖特基电极和第二栅电极。