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    High-reliability high-speed memristor
    1.
    发明授权
    High-reliability high-speed memristor 有权
    高可靠性高速忆阻器

    公开(公告)号：US09165645B2

    公开(公告)日：2015-10-20

    申请号：US14127873

    申请日：2011-06-24

    申请人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R Stanley Williams

    发明人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R Stanley Williams

    IPC分类号： G11C13/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/55 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149

    摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

    摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。 在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道 费米玻璃材料。

    NODE PLACEMENT APPARATUS, SYSTEM AND METHOD
    2.
    发明申请
    NODE PLACEMENT APPARATUS, SYSTEM AND METHOD 有权
    节点放置装置，系统和方法

    公开(公告)号：US20110289787A1

    公开(公告)日：2011-12-01

    申请号：US12790970

    申请日：2010-05-31

    申请人： Wei Yi ,  John Paul Strachan

    发明人： Wei Yi ,  John Paul Strachan

    IPC分类号： G01B11/26 ,  G01B11/00

    CPC分类号： G01C15/02

    摘要： A node placement apparatus, system and method employ an optical source to define a grid for placement of nodes. The node placement apparatus includes a structure that provides a predetermined height and the optical source positioned at the predetermined height. The optical source is configured to produce an optical beam having a predetermined declination angle. The optical beam is configured to provide illumination of a plurality of discrete points on a surface to define the grid. The system further includes the nodes. The method of node placement includes locating the optical source above a fixed point on and at the predetermined height above the surface, illuminating the plurality of discrete points with the optical beam, and positioning a node at a selected discrete point of the plurality of discrete points illuminated by the optical beam.

    摘要翻译： 节点放置装置，系统和方法使用光源来定义用于放置节点的网格。 节点放置装置包括提供预定高度并且光源位于预定高度的结构。 光源被配置为产生具有预定倾角的光束。 光束被配置为提供表面上的多个离散点的照明以限定网格。 该系统还包括节点。 节点放置的方法包括将光源定位在表面上方和预定高度上的固定点上方，用光束照射多个离散点，并将节点定位在多个离散点的选定离散点处 由光束照射。

    HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
    5.
    发明申请
    HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 有权
    高可靠性高速电容器

    公开(公告)号：US20140112059A1

    公开(公告)日：2014-04-24

    申请号：US14127873

    申请日：2011-06-24

    申请人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R. Stanley Williams

    发明人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R. Stanley Williams

    IPC分类号： G11C13/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/55 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149

    摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

    摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入 或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。

    Node placement apparatus, system and method
    6.
    发明授权
    Node placement apparatus, system and method 有权
    节点放置装置，系统和方法

    公开(公告)号：US08336217B2

    公开(公告)日：2012-12-25

    申请号：US12790970

    申请日：2010-05-31

    申请人： Wei Yi ,  John Paul Strachan

    发明人： Wei Yi ,  John Paul Strachan

    IPC分类号： G01B11/00 ,  G01B11/26

    CPC分类号： G01C15/02

    摘要： A node placement apparatus, system and method employ an optical source to define a grid for placement of nodes. The node placement apparatus includes a structure that provides a predetermined height and the optical source positioned at the predetermined height. The optical source is configured to produce an optical beam having a predetermined declination angle. The optical beam is configured to provide illumination of a plurality of discrete points on a surface to define the grid. The system further includes the nodes. The method of node placement includes locating the optical source above a fixed point on and at the predetermined height above the surface, illuminating the plurality of discrete points with the optical beam, and positioning a node at a selected discrete point of the plurality of discrete points illuminated by the optical beam.

    摘要翻译： 节点放置装置，系统和方法使用光源来定义用于放置节点的网格。 节点放置装置包括提供预定高度并且光源位于预定高度的结构。 光源被配置为产生具有预定倾角的光束。 光束被配置为提供表面上的多个离散点的照明以限定网格。 该系统还包括节点。 节点放置的方法包括将光源定位在表面上方和预定高度上的固定点上方，用光束照射多个离散点，并将节点定位在多个离散点的选定离散点处 由光束照射。

    BIPOLAR RESISTIVE SWITCH HEAT MITIGATION
    8.
    发明申请
    BIPOLAR RESISTIVE SWITCH HEAT MITIGATION 有权
    双极电阻开关保温

    公开(公告)号：US20140029327A1

    公开(公告)日：2014-01-30

    申请号：US13557199

    申请日：2012-07-24

    申请人： John Paul Strachan ,  Gilberto Medeiros Ribeiro ,  Jianhua Yang ,  Wei Yi

    发明人： John Paul Strachan ,  Gilberto Medeiros Ribeiro ,  Jianhua Yang ,  Wei Yi

    IPC分类号： H01L45/00 ,  G11C11/00

    CPC分类号： H01L45/147 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/128 ,  H01L45/145 ,  H01L45/146 ,  H01L47/00

    摘要： A heat mitigated bipolar resistive switch includes a BRS matrix sandwiched between first and second electrodes and a heat mitigator. The BRS matrix is to support bipolar switching of a conduction channel formed between the first and second electrodes through BRS matrix. The heat mitigator is to reduce heat in the BRS matrix generated during bipolar switching. The heat mitigator includes one or both of a parallel-connected NDR element to limit current flowing in the BRS matrix and a high thermal conductivity material to conduct the generated heat away from the BRS matrix above a predetermined elevated temperature.

    摘要翻译： 一种减热双极电阻开关包括夹在第一和第二电极之间的BRS矩阵和一个热量减轻器。 BRS矩阵是通过BRS矩阵来支持在第一和第二电极之间形成的传导通道的双极开关。 减热器是为了减少在双极开关期间产生的BRS基体中的热量。 散热器包括一个并联连接的NDR元件中的一个或两个，以限制在BRS基体中流动的电流和高导热性材料，以将产生的热量从BRS基体上导出高于预定的高温。

    Non-volatile sampler
    10.
    发明授权
    Non-volatile sampler 有权
    非易失性采样器

    公开(公告)号：US08451644B2

    公开(公告)日：2013-05-28

    申请号：US12825607

    申请日：2010-06-29

    申请人： Julien Borghetti ,  David A. Fattal ,  John Paul Strachan

    发明人： Julien Borghetti ,  David A. Fattal ,  John Paul Strachan

    IPC分类号： G11C11/00 ,  H01L21/82

    CPC分类号： H01L27/101 ,  G11C5/063 ,  G11C13/0007 ,  G11C27/02

    摘要： A non-volatile sampler including a row line for receiving an input signal to be sampled, the row line intersecting a number of column lines, non-volatile storage elements being disposed at intersections between the row line and the column lines; a bias voltage source connected to the column lines, the bias voltage source for selectively applying a bias voltage to at least one of the non-volatile storage elements to cause the at least one of the storage elements to store a sample of the input signal at the instance the bias voltage is applied.

    摘要翻译： 一种非易失性采样器，包括用于接收待采样的输入信号的行线，与多条列线相交的行线，非易失性存储元件设置在行线和列线之间的交点处; 连接到列线的偏置电压源，偏置电压源，用于选择性地将偏置电压施加到至少一个非易失性存储元件，以使存储元件中的至少一个将输入信号的采样存储在 施加偏置电压的情况。