摘要:
An IC inductor structure is provided which includes a first inductor element formed on a semiconductor substrate and at least a second inductor element formed on the semiconductor substrate proximate the first inductor element. The first inductor element has a first effective magnetic field direction associated therewith, and the second inductor element has a second effective magnetic field direction associated therewith. The first and second inductor elements are oriented relative to one another so as to create a non-zero angle between the first and second effective magnetic field directions.
摘要:
An IC inductor structure is provided which includes a first inductor element formed on a semiconductor substrate and at least a second inductor element formed on the semiconductor substrate proximate the first inductor element. The first inductor element has a first effective magnetic field direction associated therewith, and the second inductor element has a second effective magnetic field direction associated therewith. The first and second inductor elements are oriented relative to one another so as to create a non-zero angle between the first and second effective magnetic field directions.
摘要:
Methods and apparatus are provided for controlling at least one of a rise time and a fall time of a signal. A plurality of time shifted clock signals are generated; and a received data signal is sampled using a plurality of parallel data paths, where each of the data paths are controlled by a corresponding one of the plurality of time shifted clock signals. The plurality of time shifted clock signals can be generated, for example, by at least one delay element. The plurality of parallel data paths can be substantially identical and comprise, for example, at least one latch or at least one flip flop. Compensation can optionally be provided for variations in, for example, process corner, supply voltage, aging and operating temperature.
摘要:
Various embodiments of the present invention provide systems and circuits that provide for out of band detection. As one example, an out of band detection circuit is disclosed that includes an input signal, a clock generation circuit, and a sampling circuit. The clock generation circuit receives the input signal and derives therefrom a sampling clock, and the sampling circuit is operable to sample the input signal at a time indicated by the sampling clock.
摘要:
A method and system for modeling and calibrating duty cycle distortion (DCD) of a Serializer and Deserializer (SerDes) device, including first generating a clock DCD signal. Once the clock DCD signal is generated, it is calibrating based upon results obtained from a filtering process of the clock DCD signal. Once the clock DCD signal is calibrated, a data DCD signal is generated and calibrated based upon results obtained from a filtering process of the data DCD signal.
摘要:
A method and system for modeling and calibrating duty cycle distortion (DCD) of a Serializer and Deserializer (SerDes) device, including first generating a clock DCD signal. Once the clock DCD signal is generated, it is calibrating based upon results obtained from a filtering process of the clock DCD signal. Once the clock DCD signal is calibrated, a data DCD signal is generated and calibrated based upon results obtained from a filtering process of the data DCD signal.
摘要:
Methods and apparatus are provided for controlling at least one of a rise time and a fall time of a signal. A plurality of time shifted clock signals are generated; and a received data signal is sampled using a plurality of parallel data paths, where each of the data paths are controlled by a corresponding one of the plurality of time shifted clock signals. The plurality of time shifted clock signals can be generated, for example, by at least one delay element. The plurality of parallel data paths can be substantially identical and comprise, for example, at least one latch or at least one flip flop. Compensation can optionally be provided for variations in, for example, process corner, supply voltage, aging and operating temperature.
摘要:
Various embodiments of the present invention provide systems and circuits that provide for out of band detection. As one example, an out of band detection circuit is disclosed that includes an input signal, a clock generation circuit, and a sampling circuit. The clock generation circuit receives the input signal and derives therefrom a sampling clock, and the sampling circuit is operable to sample the input signal at a time indicated by the sampling clock.
摘要:
A buffer for interfacing complementary input signals having first logical voltage levels to a circuit operating with second logical voltage levels includes first and second branches outputting first and second complementary output signals, respectively. Each branch includes a PMOS and an NMOS transistor connected in series with a voltage-swing adjusting transistor between a first supply voltage and a second supply voltage. Control terminals of the PMOS and NMOS transistors each receive one of the complementary input signals, and a control terminal of the first voltage-swing adjusting transistor receives a first bias voltage. When the complementary input signal has a first voltage level, the voltage-swing adjusting transistor operates in a linear region and when the first complementary input signal has a second voltage level, current through the voltage-swing adjusting transistor is shut-off. No current flows in either branch when the buffer is in a static state.
摘要:
A buffer for interfacing complementary input signals having first logical voltage levels to a circuit operating with second logical voltage levels includes first and second branches outputting first and second complementary output signals, respectively. Each branch includes a PMOS and an NMOS transistor connected in series with a voltage-swing adjusting transistor between a first supply voltage and a second supply voltage. Control terminals of the PMOS and NMOS transistors each receive one of the complementary input signals, and a control terminal of the first voltage-swing adjusting transistor receives a first bias voltage. When the complementary input signal has a first voltage level, the voltage-swing adjusting transistor operates in a linear region and when the first complementary input signal has a second voltage level, current through the voltage-swing adjusting transistor is shut-off. No current flows in either branch when the buffer is in a static state.