公开(公告)号：US20070217019A1

公开(公告)日：2007-09-20

申请号：US11308311

申请日：2006-03-16

申请人： Wen-Kuei Huang ,  Chu-Jung Ko ,  Fang-Chung Chen

发明人： Wen-Kuei Huang ,  Chu-Jung Ko ,  Fang-Chung Chen

IPC分类号： G02B3/00

CPC分类号： G02B3/0031 ,  G02B3/0018 ,  G02B3/0056

摘要： A process of fabricating a microlens array is provided. A self-assembled monolayer is formed on a substrate to form a hydrophilic region and a hydrophobic region. A liquid material is coated on the substrate so that a plurality of liquid microlenses is condensed on the hydrophilic region. The liquid microlenses are cured to form a plurality of microlenses.

摘要翻译： 提供了制造微透镜阵列的工艺。 在衬底上形成自组装单层以形成亲水区域和疏水区域。 将液体材料涂覆在基板上，使得多个液体微透镜在亲水区域上冷凝。 液体微透镜被固化以形成多个微透镜。

公开(公告)号：US20080007836A1

公开(公告)日：2008-01-10

申请号：US11605230

申请日：2006-11-29

申请人： Jhih-Ping Lu ,  Wen-Kuei Huang ,  Fang-Chung Chen ,  Yuh-Zheng Lee ,  Chao-Kai Cheng

发明人： Jhih-Ping Lu ,  Wen-Kuei Huang ,  Fang-Chung Chen ,  Yuh-Zheng Lee ,  Chao-Kai Cheng

IPC分类号： G02B27/10

CPC分类号： H01L27/14685 ,  G02B3/0012 ,  H01L27/14627

摘要： A microlens module applicable in an optoelectronic device and a method for fabricating the microlens module are proposed, by which an array of microlenses can be fabricated on an optoelectronic device. The present invention is characterized that a self-assembling monolayer is imprinted onto a substrate using an imprinting technique, so as to define a microlens predetermining distribution region and a peripheral region. Then, a solution with a high light transmittance is jetted on the microlens predetermining distribution region using an ink-jet printing technique, so as to form microlenses. In comparison to prior-art techniques, as the method for fabricating the microlens module on the optoelectronic device does not require complicated and expensive techniques, the present invention is simple in fabrication and cost-effective.

摘要翻译： 提出了一种适用于光电器件的微透镜模块和用于制造微透镜模块的方法，通过该微透镜模块可以在光电器件上制造微透镜阵列。 本发明的特征在于，使用压印技术将自组装单层印刷在基板上，以便限定预定分布区域和周边区域的微透镜。 然后，使用喷墨印刷技术在微透镜预分配区域上喷射具有高透光率的溶液，以形成微透镜。 与现有技术相比，由于在光电子器件上制造微透镜模块的方法不需要复杂和昂贵的技术，因此本发明的制造和成本效益都很简单。

公开(公告)号：US07795620B2

公开(公告)日：2010-09-14

申请号：US12338988

申请日：2008-12-18

申请人： Wen-Kuei Huang

发明人： Wen-Kuei Huang

IPC分类号： H01L27/108

CPC分类号： H01L29/66666 ,  H01L27/10876 ,  H01L29/7827

摘要： A dynamic random access memory structure is disclosed, in which, the active area is a donut-type pillar at which a novel vertical transistor is disposed and has a gate filled in the central cavity of the pillar and upper and lower sources/drains located in the upper and the lower portions of the pillar respectively. A buried bit line is formed in the substrate beneath the transistor. A word line is horizontally disposed above the gate. A capacitor is disposed above the word line as well as the gate and electrically connected to the upper source/drain through a node contact. The node contact has a reverse-trench shape with the top surface electrically connected to the capacitor and with the bottom of the sidewalls electrically connected to the upper source/drain. The word line passes through the space confined by the reverse-trench shape.

摘要翻译： 公开了一种动态随机存取存储器结构，其中有源区是一个环形支柱，在该环上设置有一个新的垂直晶体管，并且在该柱的中心腔中填充有一个栅极，并且上部和下部源/漏极位于 柱的上部和下部分别。 在晶体管下面的衬底中形成掩埋位线。 字线水平设置在门的上方。 电容器设置在字线上方和栅极之间，并通过节点触点电连接到上部源极/漏极。 节点接触件具有反向沟槽形状，其顶表面电连接到电容器，并且侧壁的底部电连接到上部源极/漏极。 字线通过由反沟形状限定的空间。

公开(公告)号：US4927890A

公开(公告)日：1990-05-22

申请号：US248034

申请日：1988-09-23

申请人： Ging-Ho Hsiue ,  Wen-Kuei Huang

发明人： Ging-Ho Hsiue ,  Wen-Kuei Huang

IPC分类号： C08F285/00

CPC分类号： C08F285/00

摘要： The present invention relates to a method of synthesizing a bigraft compolymer based on grafted type peracid polymer, which comprises graft polymerizing a first ethylenically unsaturated monomer containing a carboxyl group onto a polymer substrate having a form of a membrane, particulate or tube; oxidizing the carboxyl groups of the resulting graft polymer into peracids; and then graft polymerizing a second ethylenically unsaturated monomer onto the grafted chain of the graft polymer through the decomposition of the peracid. Surface profile and morphology of the bigraft copolymer membrane product is also investigated by scanning electron microscopy and transmission electron microscopy respectively.

摘要翻译： 本发明涉及一种基于接枝型过酸聚合物合成一种载体聚合物的方法，该方法包括将含有羧基的第一种烯属不饱和单体接枝聚合到具有膜，颗粒或管形式的聚合物基材上; 将所得接枝聚合物的羧基氧化成过酸; 然后通过过酸分解将第二种烯属不饱和单体接枝聚合到接枝聚合物的接枝链上。 还通过扫描电子显微镜和透射电子显微镜研究了大型共聚物膜产品的表面形貌和形貌。

公开(公告)号：US08188552B2

公开(公告)日：2012-05-29

申请号：US12846838

申请日：2010-07-30

申请人： Wen-Kuei Huang

发明人： Wen-Kuei Huang

IPC分类号： H01L27/088

CPC分类号： H01L29/66666 ,  H01L27/10876 ,  H01L29/7827

摘要： A dynamic random access memory structure is disclosed, in which, the active area is a donut-type pillar at which a novel vertical transistor is disposed and has a gate filled in the central cavity of the pillar and upper and lower sources/drains located in the upper and the lower portions of the pillar respectively. A buried bit line is formed in the substrate beneath the transistor. A word line is horizontally disposed above the gate. A capacitor is disposed above the word line as well as the gate and electrically connected to the upper source/drain through a node contact. The node contact has a reverse-trench shape with the top surface electrically connected to the capacitor and with the bottom of the sidewalls electrically connected to the upper source/drain. The word line passes through the space confined by the reverse-trench shape.

摘要翻译： 公开了一种动态随机存取存储器结构，其中有源区是一个环形支柱，在该环上设置有一个新的垂直晶体管，并且在该柱的中心腔中填充有一个栅极，并且上部和下部源/漏极位于 柱的上部和下部分别。 在晶体管下面的衬底中形成掩埋位线。 字线水平设置在门的上方。 电容器设置在字线上方和栅极之间，并通过节点触点电连接到上部源极/漏极。 节点接触件具有反向沟槽形状，其顶表面电连接到电容器，并且侧壁的底部电连接到上部源极/漏极。 字线通过由反沟形状限定的空间。

公开(公告)号：US20080035918A1

公开(公告)日：2008-02-14

申请号：US11878907

申请日：2007-07-27

申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC分类号： H01L51/10

CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

公开(公告)号：US20070159059A1

公开(公告)日：2007-07-12

申请号：US11708018

申请日：2007-02-20

申请人： Ying-Hsien Chen ,  Cheng-Chung Lee ,  Wen-Kuei Huang ,  Wei-Yi Lin ,  Jia-Chong Ho ,  Yu-Yang Chang ,  Ming-Chun Hsiao ,  Yun-Chiao Hsiao

发明人： Ying-Hsien Chen ,  Cheng-Chung Lee ,  Wen-Kuei Huang ,  Wei-Yi Lin ,  Jia-Chong Ho ,  Yu-Yang Chang ,  Ming-Chun Hsiao ,  Yun-Chiao Hsiao

IPC分类号： H01J63/04 ,  H01J1/00 ,  H01J1/02

CPC分类号： H01J29/085 ,  B82Y10/00 ,  H01J29/925 ,  H01J31/123

摘要： An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.

公开(公告)号：US08547729B2

公开(公告)日：2013-10-01

申请号：US12191315

申请日：2008-08-14

申请人： Wen-Kuei Huang

发明人： Wen-Kuei Huang

IPC分类号： G11C11/24

CPC分类号： G11C5/063 ,  G11C8/14 ,  H01L27/10829 ,  H01L27/10867 ,  H01L27/10885 ,  H01L27/10891 ,  H01L28/82

摘要： A dynamic random access memory (DRAM) includes a substrate, a plurality of bit lines, a plurality of word lines, a plurality of recess channels, a plurality of conductive plugs and a plurality of trench capacitors. In the DRAM, the bit lines are disposed on the substrate in a first direction, and the word lines are disposed on the bit lines in a second direction. Each recess channel is in the substrate between two bit lines below the word line, and each conductive plug connects each recess channel and the word lines. Each trench capacitor is disposed in the substrate between two bit lines where the recess channels are not formed. Because the word lines can be electrically connected with the recess channels directly without using an additional chip area, the WL access time can be accelerated without an increase of the chip size.

摘要翻译： 动态随机存取存储器（DRAM）包括衬底，多个位线，多个字线，多个凹槽，多个导电插塞和多个沟槽电容器。 在DRAM中，位线沿第一方向设置在基板上，字线在第二方向上位于位线上。 每个凹槽通道位于字线下方的两个位线之间的衬底中，并且每个导电插头连接每个凹槽通道和字线。 每个沟槽电容器设置在两个位线之间的衬底中，其中未形成凹槽。 由于字线可以与凹槽通道直接电连接而不使用附加的芯片面积，所以可以加速WL访问时间而不增加芯片尺寸。

公开(公告)号：US20100295106A1

公开(公告)日：2010-11-25

申请号：US12846838

申请日：2010-07-30

申请人： Wen-Kuei Huang

发明人： Wen-Kuei Huang

IPC分类号： H01L29/78

CPC分类号： H01L29/66666 ,  H01L27/10876 ,  H01L29/7827

摘要： A dynamic random access memory structure is disclosed, in which, the active area is a donut-type pillar at which a novel vertical transistor is disposed and has a gate filled in the central cavity of the pillar and upper and lower sources/drains located in the upper and the lower portions of the pillar respectively. A buried bit line is formed in the substrate beneath the transistor. A word line is horizontally disposed above the gate. A capacitor is disposed above the word line as well as the gate and electrically connected to the upper source/drain through a node contact. The node contact has a reverse-trench shape with the top surface electrically connected to the capacitor and with the bottom of the sidewalls electrically connected to the upper source/drain. The word line passes through the space confined by the reverse-trench shape.

摘要翻译： 公开了一种动态随机存取存储器结构，其中有源区是一个环形支柱，在该环上设置有一个新的垂直晶体管，并且在该柱的中心腔中填充有一个栅极，并且上部和下部源/漏极位于 柱的上部和下部分别。 在晶体管下面的衬底中形成掩埋位线。 字线水平设置在门的上方。 电容器设置在字线上方和栅极之间，并通过节点触点电连接到上部源极/漏极。 节点接触件具有反向沟槽形状，其顶表面电连接到电容器，并且侧壁的底部电连接到上部源极/漏极。 字线通过由反沟形状限定的空间。

公开(公告)号：US07264989B2

公开(公告)日：2007-09-04

申请号：US10840637

申请日：2004-05-07

申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC分类号： H01L51/40 ,  H01L21/84

CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。