摘要:
The present invention provides a method and a compiler of compiling a source program. According to an aspect of the present invention, there is provided a method of compiling a source program comprising: identifying a hint related to vector aligning when syntax analyzing said source program; and generating a simplified code based on said identified hint related to vector aligning when generating a code.
摘要:
The present invention provides a method and a compiler of compiling a source program. According to an aspect of the present invention, there is provided a method of compiling a source program comprising: identifying a hint related to vector aligning when syntax analyzing said source program; and generating a simplified code based on said identified hint related to vector aligning when generating a code.
摘要:
A cell broadband engine processor includes memory, a power processing element (PPE) coupled with the memory, and a plurality of synergistic processing elements. The PPE creates a SPE as a computing SPE for an application. The PPE determines idles ones of the plurality of SPEs, and creates a managing SPE from one of the idle SPEs. Each of the plurality of SPEs is associated with a local storage. The managing SPE informs the computing SPE of a starting effective address of the local storage of the managing SPE and an effective address for a command queue. The managing SPE manages movement of data associated with computing of the computing SPE based on one or more commands associated with the application. A computing SPE sends the one or more commands to the managing SPE for insertion into the command queue.
摘要:
A cell broadband engine processor includes memory, a power processing element (PPE) coupled with the memory, and a plurality of synergistic processing elements. The PPE creates a SPE as a computing SPE for an application. The PPE determines idles ones of the plurality of SPEs, and creates a managing SPE from one of the idle SPEs. Each of the plurality of SPEs is associated with a local storage. The managing SPE informs the computing SPE of a starting effective address of the local storage of the managing SPE and an effective address for a command queue. The managing SPE manages movement of data associated with computing of the computing SPE based on one or more commands associated with the application. A computing SPE sends the one or more commands to the managing SPE for insertion into the command queue.
摘要:
A cell broadband engine processor includes a memory a power processing element (PPE) coupled with the memory, and a plurality of synergistic processing elements. The PPE creates a SPE as a computing SPE for an application. The PPE determines idles ones of the plurality of SPEs, and creates an idle one of the plurality SPEs as a managing SPE. Each of the plurality of SPEs is associated with a local storage. The managing SPE informs the computing SPE of a starting effective address of the local storage of the managing SPE and an effective address for a command queue. The managing SPE manages movement of data associated with computing of the computing SPE based on one or more commands associated with the application. A computing SPE sends the one or more commands to the managing SPE for insertion into the command queue.
摘要:
A method of managing data movement in a cell broadband engine processor, comprising: determining one or more idle synergistic processing elements among multiple SPEs in the cell broadband engine processor as a managing SPE, and informing a computing SPE among said multiple SPEs of a starting effective address of a LS of said managing SPE and an effective address for a command queue; and said managing SPE managing movement of data associated with computing of said computing SPE based on the command queue from the computing SPE.
摘要:
A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.
摘要:
An automatic slide loading device for microarray scanner comprises slide holders (1), a carrier device (2) and a positioning chamber (3), wherein the slide holder (1) can hold microarray slides (6) and the slide holder (1) is placed out of the scanning platform of the microarray scanner when the microarray scanner is in off work state, wherein the carrier device (2) is connected to the positioning chamber (3) and the carrier device (2) can load the slide holder (1) into the positioning chamber (3), wherein the positioning chamber (3) is placed above the scanning platform of the microarray scanner and is used to precisely locate the working surface of the microarray slides (6) in the slide holder (1).
摘要:
Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam (12) at a frequency to generate at least a light beam (16) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (13). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 μm and 6.6-7.08 μm), a relatively great 2nd-order nonlinear optical coefficient (d15=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm−1K−1), and a high chemical stability.
摘要:
A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.